MCP6141/2/3/4
600 nA, Non-Unity Gain Rail-to-Rail Input/Output Op Amps
Features:
•
•
•
•
•
•
•
•
•
Low Quiescent Current: 600 nA/amplifier (typical)
Gain Bandwidth Product: 100 kHz (typical)
Stable for gains of 10 V/V or higher
Rail-to-Rail Input/Output
Wide Supply Voltage Range: 1.4V to 6.0V
Available in Single, Dual, and Quad
Chip Select (CS) with MCP6143
Available in 5-lead and 6-lead SOT-23 Packages
Temperature Ranges:
- Industrial: -40°C to +85°C
- Extended: -40°C to +125°C
Description:
The MCP6141/2/3/4 family of non-unity gain stable
operational amplifiers (op amps) from Microchip
Technology Inc. operate with a single supply voltage as
low as 1.4V, while drawing less than 1 µA (maximum)
of quiescent current per amplifier. These devices are
also designed to support rail-to-rail input and output
operation. This combination of features supports
battery-powered and portable applications.
The MCP6141/2/3/4 amplifiers have a gain bandwidth
product of 100 kHz (typical) and are stable for gains of
10 V/V or higher. These specifications make these op
amps appropriate for battery powered applications
where a higher frequency response from the amplifier
is required.
The MCP6141/2/3/4 family operational amplifiers are
offered in single (MCP6141), single with Chip Select
(CS) (MCP6143), dual (MCP6142) and quad
(MCP6144) configurations. The MCP6141 device is
available in the 5-lead SOT-23 package, and the
MCP6143 device is available in the 6-lead SOT-23
package.
Applications:
•
•
•
•
Toll Booth Tags
Wearable Products
Temperature Measurement
Battery Powered
Design Aids:
•
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
Mindi™ Simulation Tool
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
Package Types
MCP6141
PDIP, SOIC, MSOP
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
8 NC
7 V
DD
6 V
OUT
5 NC
MCP6143
PDIP, SOIC, MSOP
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
8 CS
7 V
DD
6 V
OUT
5 NC
Related Devices:
• MCP6041/2/3/4: Unity Gain Stable Op Amps
MCP6141
SOT-23-5
V
OUT
1
V
SS
2
V
IN
+ 3
4 V
IN
–
5 V
DD
MCP6143
SOT-23-6
V
OUT
1
V
SS
2
V
IN
+ 3
6 V
DD
5 CS
4 V
IN
–
Typical Application
R
1
V
1
R
2
V
2
R
3
V
3
MCP614X
V
REF
Inverting, Summing Amplifier
R
F
V
OUT
MCP6142
PDIP, SOIC, MSOP
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
8 V
DD
MCP6144
PDIP, SOIC, TSSOP
V
OUTA
1
14 V
OUTD
13 V
IND
–
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
–
8 V
OUTC
7 V
OUTB
V
INA
– 2
6 V
INB
– V
INA
+ 3
5 V
INB
+
V
DD
4
V
INB
+ 5
V
INB
– 6
V
OUTB
7
©
2009 Microchip Technology Inc.
DS21668D-page 1
MCP6141/2/3/4
NOTES:
DS21668D-page 2
©
2009 Microchip Technology Inc.
MCP6141/2/3/4
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
††
See
Section 4.1.2 “Input Voltage and Current Limits”.
Absolute Maximum Ratings †
V
DD
– V
SS
........................................................................7.0V
Current at Analog Input Pins .........................................±2 mA
Analog Inputs (V
IN
+, V
IN
–) †† ........ V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs ......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ................................... –65°C to +150°C
Maximum Junction Temperature (T
J
)......................... .+150°C
ESD Protection On All Pins (HBM; MM)
.............. ≥
4 kV; 400V
DC ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.4V to +5.5V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 MΩ to V
L
and CS is tied low (refer to
Figure 1-2
and
Figure 1-3).
Parameters
Input Offset
Input Offset Voltage
Drift with Temperature
Sym
V
OS
ΔV
OS
/ΔT
A
ΔV
OS
/ΔT
A
Min
-3
—
—
70
—
—
—
—
—
—
V
SS
−0.3
62
60
60
95
Typ
—
±1.8
±10
85
1
20
1200
1
10 ||6
10
13
||6
—
80
75
80
115
13
Max
+3
—
—
—
—
100
5000
—
—
—
V
DD
+0.3
—
—
—
—
Units
mV
µV/°C
µV/°C
dB
pA
pA
pA
pA
Ω||pF
Ω||pF
V
dB
dB
dB
dB
Conditions
V
CM
= V
SS
V
CM
= V
SS
, T
A
= -40°C to +85°C
V
CM
= V
SS
,
T
A
= +85°C to +125°C
V
CM
= V
SS
Power Supply Rejection
Input Bias Current and Impedance
Input Bias Current
Industrial Temperature
Extended Temperature
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common-Mode Input Range
Common-Mode Rejection Ratio
PSRR
I
B
I
B
I
B
I
OS
Z
CM
Z
DIFF
V
CMR
CMRR
CMRR
CMRR
T
A
= +85°
T
A
= +125°
V
DD
= 5V, V
CM
= -0.3V to 5.3V
V
DD
= 5V, V
CM
= 2.5V to 5.3V
V
DD
= 5V, V
CM
= -0.3V to 2.5V
R
L
= 50 kΩ to V
L
,
V
OUT
= 0.1V to V
DD
−0.1V
R
L
= 50 kΩ to V
L
,
0.5V input overdrive
R
L
= 50 kΩ to V
L
,
A
OL
≥
95 dB
V
DD
= 1.4V
V
DD
= 5.5V
Note 1
I
O
= 0
Open-Loop Gain
DC Open-Loop Gain (large signal)
Output
Maximum Output Voltage Swing
Linear Region Output Voltage Swing
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
V
DD
I
Q
1.4
0.3
—
0.6
6.0
1.0
V
µA
V
OL
, V
OH
V
OVR
I
SC
I
SC
V
SS
+ 10
V
SS
+ 100
—
—
—
—
2
20
V
DD
−
10
V
DD
−
100
—
—
mV
mV
mA
mA
A
OL
Note 1:
All parts with date codes February 2008 and later have been screened to ensure operation at V
DD
= 6.0V. However, the
other minimum and maximum specifications are measured at 1.8V and 5.5V
©
2009 Microchip Technology Inc.
DS21668D-page 3
MCP6141/2/3/4
AC ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.4V to +5.5V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 MΩ to V
L
, C
L
= 60 pF and CS is tied low (refer to
Figure 1-2
and
Figure 1-3).
Parameters
AC Response
Gain Bandwidth Product
Slew Rate
Phase Margin
Noise
Input Voltage Noise
Input Voltage Noise Density
Input Current Noise Density
Sym
GBWP
SR
PM
E
ni
e
ni
i
ni
Min
—
—
—
—
—
—
Typ
100
24
60
5.0
170
0.6
Max
—
—
—
—
—
—
Units
kHz
V/ms
°
µV
P-P
G = +10 V/V
Conditions
f = 0.1 Hz to 10 Hz
nV/√Hz f = 1 kHz
fA/√Hz f = 1 kHz
MCP6143 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.4V to +5.5V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 MΩ to V
L
, and C
L
= 60 pF (refer to
Figure 1-2
and
Figure 1-3).
Parameters
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current
Amplifier Output Leakage, CS High
Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output High-Z
Hysteresis
Sym
Min
Typ
Max
Units
Conditions
V
IL
I
CSL
V
IH
I
CSH
I
SS
I
OLEAK
t
ON
t
OFF
V
HYST
V
SS
—
—
5
V
SS
+0.3
—
V
pA
CS = V
SS
V
DD
–0.3
—
—
—
—
5
-20
20
V
DD
—
—
—
V
pA
pA
pA
CS = V
DD
CS = V
DD
CS = V
DD
G = +1 V/V, CS = 0.3V to
V
OUT
= 0.9V
DD
/2
G = +1 V/V, CS = V
DD
–0.3V to
V
OUT
= 0.1V
DD
/2
V
DD
= 5.0V
—
—
—
2
10
0.6
50
—
—
ms
µs
V
CS
V
IL
t
ON
V
IH
t
OFF
High-Z
-0.6 µA
(typical)
V
OUT
High-Z
I
SS
-20 pA
(typical)
I
CS
5 pA (typical)
-20 pA
(typical)
5 pA (typical)
FIGURE 1-1:
Chip Select (CS) Timing
Diagram (MCP6143 only).
DS21668D-page 4
©
2009 Microchip Technology Inc.
MCP6141/2/3/4
TEMPERATURE CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.4V to +5.5V, V
SS
= GND.
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 6L-SOT-23
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Note 1:
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
—
—
—
—
256
230
206
85
163
70
120
100
—
—
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
T
A
T
A
-40
-40
-40
-65
—
—
—
—
+85
+125
+125
+150
°C
°C
°C
°C
Industrial Temperature parts
Extended Temperature parts
(Note 1)
Sym.
Min.
Typ.
Max. Units
Conditions
The MCP6141/2/3/4 family of Industrial Temperature op amps operates over this extended range, but with
reduced performance. In any case, the internal Junction Temperature (T
J
) must not exceed the Absolute
Maximum specification of +150°C.
1.1
Test Circuits
The test circuits used for the DC and AC tests are
shown in
Figure 1-2
and
Figure 1-2.
The bypass
capacitors are laid out according to the rules discussed
in
Section 4.6 “Supply Bypass”.
V
DD
R
N
0.1 µF 1 µF
V
OUT
C
L
V
DD
/2 R
G
R
F
V
L
R
L
V
IN
MCP614X
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
V
DD
R
N
0.1 µF 1 µF
V
OUT
C
L
V
IN
R
G
R
F
V
L
R
L
V
DD
/2
MCP614X
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
©
2009 Microchip Technology Inc.
DS21668D-page 5
