MCP6G01/1R/1U/2/3/4
110 µA Selectable Gain Amplifier
Features
• 3 Gain Selections:
- +1, +10, +50 V/V
• One Gain Select Input per Amplifier
• Rail-to-Rail Input and Output
• Low Gain Error: ±1% (max.)
• High Bandwidth: 250 kHz to 900 kHz (typ.)
• Low Supply Current: 110 µA (typ.)
• Single Supply: 1.8V to 5.5V
• Extended Temperature Range: -40°C to +125°C
Description
The Microchip Technology Inc. MCP6G01/1R/1U/2/3/4
are analog Selectable Gain Amplifiers (SGA). They can
be configured for gains of +1 V/V, +10 V/V, and
+50 V/V through the Gain Select input pin(s). The Chip
Select pin on the MCP6G03 can put it into shutdown to
conserve power. These SGAs are optimized for single
supply applications requiring reasonable quiescent
current and speed.
The single amplifiers MCP6G01, MCP6G01R,
MCP6G01U, and MCP6G03, are available in 5-pin
SOT-23 package and the dual amplifier MCP6G02, are
available in 8-pin SOIC and MSOP packages. The
quad amplifier MCP6G04 is available in 14-pin SOIC
and TSSOP packages. All parts are fully specified from
-40°C to +125°C.
Typical Applications
•
•
•
•
•
A/D Converter Driver
Industrial Instrumentation
Bar Code Readers
Metering
Digital Cameras
Package Types
MCP6G01
SOIC, MSOP
NC 1
8 NC
7 V
DD
6 V
OUT
5 NC
GSEL 2
V
IN
3
V
SS
4
Block Diagram
V
DD
V
IN
Gain
Switches
Gain Select
Logic
5 MΩ
CS
(MCP6G03
only)
V
SS
Gain
(V/V)
1
10
50
Note:
0
V
DD
V
SS
is assumed to be 0V
GSEL Voltage (Typ.)
(V)
V
DD
/2 (or open)
Resistor Ladder
(R
LAD
)
R
F
V
OUT
3
MCP6G03
SOIC, MSOP
NC 1
GSEL 2
V
IN
3
V
SS
4
8 CS
7 V
DD
6 V
OUT
5 NC
MCP6G01
SOT-23-5
V
OUT
1
V
SS
2
V
IN
3
MCP6G02
SOIC, MSOP
5 V
DD
V
OUTA
1
GSEL
A
2
4 GSEL
V
INA
3
V
SS
4
8 V
DD
7 V
OUTB
6 GSEL
B
5 V
INB
GSEL
R
G
MCP6G01R
SOT-23-5
V
OUT
1
V
DD
2
V
IN
3
5 V
SS
MCP6G04
SOIC, TSSOP
V
OUTA
1
14 V
OUTD
13 GSEL
D
12 V
IND
11 V
SS
10 V
INC
9 GSEL
C
8 V
OUTC
GSEL
A
2
4 GSEL
V
INA
3
V
DD
4
V
INB
5
V
OUTB
7
4 V
OUT
MCP6G01U
SOT-23-5
V
IN
1
V
SS
2
GSEL 3
5 V
DD
GSEL
B
6
©
2006 Microchip Technology Inc.
DS22004B-page 1
MCP6G01/1R/1U/2/3/4
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
††
See
Section 4.1.4 “Input Voltage and Current Limits”.
Absolute Maximum Ratings †
V
DD
– V
SS
........................................................................7.0V
Current at Analog Input Pin (V
IN
)
......................................±2
mA
Analog Input (V
IN
) †† ..................... V
SS
– 1.0V to V
DD
+ 1.0V
All other Inputs and Outputs........... V
SS
– 0.3V to V
DD
+ 0.3V
Output Short Circuit Current...................................continuous
Current at Output and Supply Pins
................................ ±30
mA
Storage Temperature.....................................-65°C to +150°C
Junction Temperature.................................................. +150°C
ESD protection on all pins (HBM; MM)
................ ≥
4 kV; 200V
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, G = +1 V/V,
V
IN
= (0.3V)/G, R
L
= 100 kΩ to V
DD
/2, GSEL = V
DD
/2, and CS is tied low.
Parameters
Amplifier Inputs (V
IN
)
Input Offset Voltage
Input Offset Voltage Drift
Power Supply Rejection Ratio
Input Bias Current
Input Bias Current at
Temperature
Input Impedance
Amplifier Gain
Nominal Gains
DC Gain Error G = +1
G
≥
+10
DC Gain Drift
G = +1
G
≥
+10
Ladder Resistance
(Note 1)
Ladder Resistance
Ladder Resistance
across Temperature
Amplifier Output
DC Output Non-linearity
G = +1
Sym
V
OS
ΔV
OS
/ΔT
A
PSRR
I
B
I
B
I
B
Z
IN
G
g
E
g
E
ΔG/ΔT
A
ΔG/ΔT
A
R
LAD
ΔR
LAD
/ΔT
A
Min
–4.5
—
—
65
—
—
—
—
—
–0.3
–1.0
—
—
200
—
Typ
±1.0
±1.0
±2
80
1
30
1000
10
13
||6
1 to 50
—
—
±1
±4
350
–1800
Max
+4.5
—
—
—
—
—
5000
—
—
+0.3
+1.0
—
—
500
—
Units
mV
mV
µV/°C
dB
pA
pA
pA
Ω||pF
V/V
%
%
ppm/°C
ppm/°C
kΩ
ppm/°C
G = +1
Conditions
G = +10, +50
G = +1, T
A
= -40°C to +125°C
G = +1
(Note 1)
T
A
= +85°C
T
A
= +125°C
+1, +10 or +50
V
OUT
≈
0.3V to V
DD
−
0.3V
V
OUT
≈
0.3V to V
DD
−
0.3V
T
A
= -40°C to +125°C
T
A
= -40°C to +125°C
T
A
= -40°C to +125°C
V
ONL
V
ONL
–0.2
–0.1
–0.05
V
SS
+10
V
SS
+10
—
—
—
—
—
—
—
±7
±20
+0.2
+0.1
+0.05
V
DD
–10
V
DD
–10
—
—
% of FSR V
OUT
= 0.3V to V
DD
– 0.3V,
V
DD
= 1.8V
% of FSR V
OUT
= 0.3V to V
DD
– 0.3V,
V
DD
= 5.5V
% of FSR V
OUT
= 0.3V to V
DD
– 0.3V
mV
mV
mA
mA
G = +1; 0.3V output overdrive
G
≥
+10; 0.5V output overdrive
V
DD
= 1.8V
V
DD
= 5.5V
DC Output Non-linearity, G = +10, +50
Maximum Output Voltage Swing
Short Circuit Current
Note 1:
V
ONL
V
OH
, V
OL
V
OH
, V
OL
I
SC
I
SC
2:
R
LAD
(R
F
+R
G
in
Figure 4-1)
connects V
SS
, V
OUT
, and the inverting input of the internal amplifier. Thus, V
SS
is coupled
to the internal amplifier and the PSRR spec describes PSRR+ only. It is recommended that the V
SS
pin be tied directly
to ground to avoid noise problems.
I
Q
includes current in R
LAD
(typically 0.6 µA at V
OUT
= 0.3V), and excludes digital switching currents.
DS22004B-page 2
©
2006 Microchip Technology Inc.
MCP6G01/1R/1U/2/3/4
DC ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, G = +1 V/V,
V
IN
= (0.3V)/G, R
L
= 100 kΩ to V
DD
/2, GSEL = V
DD
/2, and CS is tied low.
Parameters
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note 1:
Sym
V
DD
I
Q
Min
1.8
60
Typ
—
110
Max
5.5
170
Units
V
µA
Conditions
I
O
= 0
(Note 2)
2:
R
LAD
(R
F
+R
G
in
Figure 4-1)
connects V
SS
, V
OUT
, and the inverting input of the internal amplifier. Thus, V
SS
is coupled
to the internal amplifier and the PSRR spec describes PSRR+ only. It is recommended that the V
SS
pin be tied directly
to ground to avoid noise problems.
I
Q
includes current in R
LAD
(typically 0.6 µA at V
OUT
= 0.3V), and excludes digital switching currents.
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, G = +1 V/V,
V
IN
= (0.3V)/G, R
L
= 100 kΩ to V
DD
/2, C
L
= 60 pF, GSEL = V
DD
/2, and CS is tied low.
Parameters
Frequency Response
-3dB Bandwidth
Sym
BW
BW
BW
Min
—
—
—
—
—
—
—
—
—
Typ
900
350
250
0.3
0
0.7
0.0029
0.18
1.3
Max
—
—
—
—
—
—
—
—
—
Units
kHz
kHz
kHz
dB
dB
dB
%
%
%
Conditions
G = +1, V
OUT
< 100 mV
P-P
(Note 1)
G = +10, V
OUT
< 100 mV
P-P
(Note 1)
G = +50, V
OUT
< 100 mV
P-P
(Note 1)
G = +1; V
OUT
< 100 mV
P-P
G = +10, V
OUT
< 100 mV
P-P
G = +50; V
OUT
< 100 mV
P-P
V
OUT
= 1.75V ± 1.4V
PK
, V
DD
= 5.0V,
BW = 80 kHz
V
OUT
= 2.5V ± 1.4V
PK
, V
DD
= 5.0V,
BW = 80 kHz
V
OUT
= 2.5V ± 1.4V
PK
, V
DD
= 5.0V,
BW = 80 kHz
G=1
G = 10
G = 50
f = 0.1 Hz to 10 Hz
(Note 2)
f = 0.1 Hz to 30 kHz
(Note 2)
Gain Peaking
GPK
GPK
GPK
Total Harmonic Distortion plus Noise
f = 1 kHz, G = +1 V/V
f = 1 kHz, G = +10 V/V
f = 1 kHz, G = +50 V/V
Step Response
Slew Rate
SR
SR
SR
Noise
Input Noise Voltage
Input Noise Voltage Density
E
ni
E
ni
e
ni
e
ni
e
ni
Input Noise Current Density
Note 1:
2:
i
ni
—
—
—
—
—
—
9
50
38
46
41
4
—
—
—
—
—
—
µV
P-P
µV
P-P
—
—
—
0.50
2.3
4.5
—
—
—
V/µs
V/µs
V/µs
THD+N
THD+N
THD+N
nV/√Hz G = +1 V/V, f = 10 kHz
(Note 2)
nV/√Hz G = +10 V/V, f = 10 kHz
(Note 2)
nV/√Hz G = +50 V/V, f = 10 kHz
(Note 2)
fA/√Hz f = 10 kHz
See
Table 4-1
for a list of typical numbers and
Figure 2-31
for the frequency response versus gain.
E
ni
and e
ni
include ladder resistance thermal noise.
©
2006 Microchip Technology Inc.
DS22004B-page 3
MCP6G01/1R/1U/2/3/4
DIGITAL ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, T
A
= 25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, G = +1 V/V, V
IN
= (0.3V)/G,
R
L
= 100 kΩ to V
DD
/2, C
L
= 60 pF, GSEL = V
DD
/2, and CS is tied low.
Parameters
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
Quiescent Current per Amplifier,
Shutdown Mode (I
DD
)
Quiescent Current per Amplifier,
Shutdown Mode (I
SS
)
(Note 3)
CS Dynamic Specifications
Input Capacitance
Input Rise/Fall Times
CS Low to Amplifier Output High
Turn-on Time
Sym
V
CSL
I
CSL
V
CSH
I
CSH
I
DD_SHDN
I
SS_SHDN
I
SS_SHDN
C
CS
t
CSRF
t
CSON
t
CSON
Min
0
—
0.8V
DD
—
—
—
—
—
—
—
—
—
—
—
0.15V
DD
0.65V
DD
–10
+1.5
—
—
—
—
—
—
—
—
Typ
—
30
—
0.8
120
–2.4
–7.2
10
—
40
7
30
0.40
0.55
—
—
—
—
8
—
45
95
10
12
9
8
Max
0.2V
DD
—
V
DD
—
—
—
—
—
2
—
—
—
—
—
0.35V
DD
0.85V
DD
–1.5
+10
—
10
—
—
—
—
—
—
Units
V
pA
V
µA
pA
µA
µA
pF
µs
µs
µs
µs
V
V
V
V
µA
µA
pF
µs
mV
mV
µs
µs
µs
µs
(Note 2)
V
DD
= 1.8V
V
DD
= 5.5V
(Note 2)
CS = 0V
CS = 0V
CS = V
DD
Conditions
CS = V
DD
= 5.5V
CS = V
DD
, MCP6G03
CS = V
DD
= 1.8V, MCP6G03
CS = V
DD
= 5.5V, MCP6G03
G = +1 V/V, V
DD
= 1.8V, V
IN
= 0.9V
DD
CS = 0.2V
DD
to V
OUT
= 0.8V
DD
G = +1 V/V, V
DD
= 5.5V, V
IN
= 0.9V
DD
CS = 0.2V
DD
to V
OUT
= 0.8V
DD
G = +1 V/V, V
IN
= V
DD
/2,
CS = 0.8V
DD
to V
OUT
= 0.1V
DD
/2
V
DD
= 1.8V
V
DD
= 5.5V
Gain changes between 1 and 10,
I
GSEL
= 0
Gain changes between 1 and 50,
I
GSEL
= 0
GSEL voltage = 0.3V
DD
GSEL voltage = 0.7V
DD
CS High to Amplifier Output High-Z
Turn-off Time
Hysteresis
GSEL Specifications (Note 1)
GSEL Logic Threshold, Low
GSEL Logic Threshold, High
GSEL Input Current, Low
GSEL Input Current, High
Input Capacitance
Input Rise/Fall Times
Hysteresis
GSEL Low to Valid Output Time,
G = +1 to +10 Select
GSEL Middle to Valid Output Time,
G = +10 to +1 Select
GSEL High to Valid Output Time,
G = +1 to +50 Select
GSEL Middle to Valid Output Time,
G = +50 to +1 Select
Note 1:
2:
3:
t
CSOFF
V
CSHY
V
CSHY
V
GSL
V
GSH
I
GSL
I
GSH
C
GSEL
t
GSRF
V
GSHY
V
GSHY
t
GSL1
t
GSM10
t
GSH1
t
GSM50
GSEL Dynamic Specifications (Note 1)
V
IN
= 150 mV,
GSEL = 0.25V
DD
to V
OUT
= 1.37V
V
IN
= 150 mV,
GSEL = 0.25V
DD
to V
OUT
= 0.28V
V
IN
= 30 mV,
GSEL = 0.75V
DD
to V
OUT
= 1.35V
V
IN
= 30 mV,
GSEL = 0.75V
DD
to V
OUT
= 0.18V
GSEL is a tri-level input pin. The gain is 10 when its voltage is low, 1 when it is at mid-suppy, and 50 when it is high.
Not tested in production. Set by design and characterization.
I
SS_SHDN
includes the current through the CS pin, R
L
and R
LAD
, and excludes digital switching currents. The block dia-
gram on the from page shows these current paths (through V
SS
).
DS22004B-page 4
©
2006 Microchip Technology Inc.
MCP6G01/1R/1U/2/3/4
DIGITAL ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise indicated, T
A
= 25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, G = +1 V/V, V
IN
= (0.3V)/G,
R
L
= 100 kΩ to V
DD
/2, C
L
= 60 pF, GSEL = V
DD
/2, and CS is tied low.
Parameters
GSEL High to Valid Output Time,
G = +10 to +50 Select
GSEL Low to Valid Output Time,
G = +50 to +10 Select
Note 1:
2:
3:
Sym
t
GSH10
t
GSL50
Min
—
—
Typ
12
9
Max
—
—
Units
µs
µs
Conditions
V
IN
= 30 mV,
GSEL = 0.75V
DD
to V
OUT
= 1.38V
V
IN
= 30 mV,
GSEL = 0.25V
DD
to V
OUT
= 0.42V
GSEL is a tri-level input pin. The gain is 10 when its voltage is low, 1 when it is at mid-suppy, and 50 when it is high.
Not tested in production. Set by design and characterization.
I
SS_SHDN
includes the current through the CS pin, R
L
and R
LAD
, and excludes digital switching currents. The block dia-
gram on the from page shows these current paths (through V
SS
).
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
DD
= +1.8V to +5.5V, and V
SS
= GND.
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-MSOP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Note 1:
Sym
T
A
T
A
T
A
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
Min
–40
–40
–65
—
—
—
—
—
Typ
—
—
—
256
163
206
120
100
Max
+125
+125
+150
—
—
—
—
—
Units
°C
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
Conditions
(Note 1)
The MCP6G01/1R/1U/2/3/4 family of SGAs operates over this temperature range, but operation must not cause T
J
to
exceed Maximum Junction Temperature (+150°C).
V
IN
0.150V
0.030V
GSEL
t
GSL1
1.50V
V
OUT
0.15V
0.15V
0.03V
t
GSM10
t
GSH1
1.50V
0.30V
0.03V
t
GSM50
t
GSH10
t
GSL50
1.50V
0.30V
FIGURE 1-1:
Gain Select Timing Diagram.
©
2006 Microchip Technology Inc.
DS22004B-page 5
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