MCP6V26/7/8
620 µA, 2 MHz Auto-Zeroed Op Amps
Features
• High DC Precision:
- V
OS
Drift: ±50 nV/°C (maximum)
- V
OS
: ±2 µV (maximum)
- A
OL
: 125 dB (minimum)
- PSRR: 125 dB (minimum)
- CMRR: 120 dB (minimum)
- E
ni
: 1.0 µV
P-P
(typical), f = 0.1 Hz to 10 Hz
- E
ni
: 0.32 µV
P-P
(typical), f = 0.01 Hz to 1 Hz
• Low Power and Supply Voltages:
- I
Q
: 620 µA/amplifier (typical)
- Wide Supply Voltage Range: 2.3V to 5.5V
• Easy to Use:
- Rail-to-Rail Input/Output
- Gain Bandwidth Product: 2 MHz (typical)
- Unity Gain Stable
- Available in Single and Dual
- Single with Chip Select (CS): MCP6V28
• Extended Temperature Range: -40°C to +125°C
Description
The Microchip Technology Inc. MCP6V26/7/8 family of
operational amplifiers provides input offset voltage
correction for very low offset and offset drift. These
devices have a wide gain bandwidth product (2 MHz,
typical) and strongly reject switching noise. They are
unity gain stable, have no 1/f noise, and have good
power supply rejection ratio (PSRR) and common
mode rejection ratio (CMRR). These products operate
with a single supply voltage as low as 2.3V, while
drawing 620 µA/amplifier (typical) of quiescent current.
The Microchip Technology Inc. MCP6V26/7/8 op amps
are offered as a single (MCP6V26), single with Chip
Select (CS) (MCP6V28) and dual (MCP6V27). They
were designed using an advanced CMOS process.
Package Types (top view)
MCP6V26
MSOP, SOIC
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
8 NC
7 V
DD
6 V
OUT
5 NC
NC
V
IN
–
V
IN
+
V
SS
MCP6V26
2×3 TDFN *
1
2
3
4
EP
9
8
7
6
5
NC
V
DD
V
OUT
NC
Typical Applications
•
•
•
•
•
Portable Instrumentation
Sensor Conditioning
Temperature Measurement
DC Offset Correction
Medical Instrumentation
MCP6V27
MSOP, SOIC
V
OUTA
V
INA
–
V
INA
+
V
SS
1
2
3
4
8
7
6
5
V
DD
V
OUTA
V
OUTB
V –
INA
V
INB
– V
INA
+
V
INB
+
V
SS
MCP6V27
4×4 DFN *
1
2
3
4
EP
9
8
7
6
5
V
DD
V
OUTB
V
INB
–
V
INB
+
Design Aids
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
MCP6V28
MSOP, SOIC
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
8 CS
7 V
DD
6 V
OUT
5 NC
NC
V
IN
–
V
IN
+
V
SS
MCP6V28
2×3 TDFN *
1
2
3
4
EP
9
8
7
6
5
CS
V
DD
V
OUT
NC
Related Parts
Parts with lower power, lower bandwidth and higher
noise:
• MCP6V01/2/3: Spread clock
• MCP6V06/7/8: Non-spread clock
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
©
2011 Microchip Technology Inc.
DS25007B-page 1
MCP6V26/7/8
Typical Application Circuit
10 kΩ
V
IN
10 kΩ
10 nF 500 kΩ
5 kΩ
U
1
MCP6V26
U
2
MCP661
V
DD
/2
10 kΩ
V
OUT
10 kΩ
V
DD
/2
Offset Voltage Correction for Power Driver
DS25007B-page 2
©
2011 Microchip Technology Inc.
MCP6V26/7/8
1.0
1.1
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
– V
SS
..............................................................................6.5V
Current at Input Pins †† ......................................................±2 mA
Analog Inputs (V
IN
+ and V
IN
–) †† .......... V
SS
– 1.0V to V
DD
+1.0V
All other Inputs and Outputs .................. V
SS
– 0.3V to V
DD
+0.3V
Difference Input voltage ............................................. |V
DD
– V
SS
|
Output Short Circuit Current ....................................... Continuous
Current at Output and Supply Pins ...................................±30 mA
Storage Temperature ..........................................-65°C to +150°C
Max. Junction Temperature .............................................. +150°C
ESD protection on all pins (HBM, CDM, MM)
≥
4 kV,1.5 kV, 300V
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other
conditions above those indicated in the operational
listings of this specification is not implied. Exposure to
maximum rating conditions for extended periods may
affect device reliability.
††
See
Section 4.2.1, Rail-to-Rail Inputs
.
1.2
Specifications
DC ELECTRICAL SPECIFICATIONS
TABLE 1-1:
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.3V to +5.5V, V
SS
= GND,
V
CM
= V
DD
/3, V
OUT
= V
DD
/2, V
L
= V
DD
/2, R
L
= 10 kΩ to V
L
and CS = GND (refer to
Figure 1-5
and
Figure 1-6).
Parameters
Input Offset
Input Offset Voltage
Input Offset Voltage Drift
with Temperature (linear Temp. Co.)
Input Offset Voltage Quadratic
Temperature Coefficient
Power Supply Rejection
Input Bias Current and Impedance
Input Bias Current
Input Bias Current across
Temperature
Input Offset Current
Input Offset Current across
Temperature
Common Mode Input Impedance
Differential Input Impedance
Note 1:
I
B
I
B
I
B
I
OS
I
OS
I
OS
Z
CM
Z
DIFF
—
—
—
—
—
—
—
—
+7
+110
+1.2
±70
±50
±60
10
13
||12
10
13
||12
—
—
+5
—
—
—
—
—
pA
pA
nA
pA
pA
pA
Ω||pF
Ω||pF
T
A
= +85°C
T
A
= +125°C
T
A
= +85°C
T
A
= +125°C
V
OS
TC
1
TC
2
PSRR
-2
-50
—
125
—
—
±0.2
142
+2
+50
—
—
µV
T
A
= +25°C
(Note
1)
nV/°C T
A
= -40 to +125°C
(Note
1)
nV/°C
2
T
A
= -40 to +125°C
dB
(Note
1)
Sym
Min
Typ
Max
Units
Conditions
2:
Set by design and characterization. Due to thermal junction and other effects in the production
environment, these parts can only be screened in production (except TC
1
; see
Appendix B: “Offset
Related Test Screens”).
Figure 2-18
shows how V
CML
and V
CMH
changed across temperature for the first production lot.
©
2011 Microchip Technology Inc.
DS25007B-page 3
MCP6V26/7/8
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.3V to +5.5V, V
SS
= GND,
V
CM
= V
DD
/3, V
OUT
= V
DD
/2, V
L
= V
DD
/2, R
L
= 10 kΩ to V
L
and CS = GND (refer to
Figure 1-5
and
Figure 1-6).
Parameters
Common Mode
Common-Mode Input
Voltage Range Low
Common-Mode Input
Voltage Range High
Common-Mode Rejection
V
CML
V
CMH
CMRR
—
V
DD
+
0.2
120
—
—
136
V
SS
−
0.15
—
—
V
V
dB
(Note
2)
(Note
2)
V
DD
= 2.3V,
V
CM
= -0.15V to 2.5V
(Note
1, Note 2)
V
DD
= 5.5V,
V
CM
= -0.15V to 5.7V
(Note
1, Note 2)
V
DD
= 2.3V,
V
OUT
= 0.2V to 2.1V
(Note
1)
V
DD
= 5.5V,
V
OUT
= 0.2V to 5.3V
(Note
1)
G = +2, 0.5V
input overdrive
G = +2, 0.5V
input overdrive
V
DD
= 2.3V
V
DD
= 5.5V
Sym
Min
Typ
Max
Units
Conditions
CMRR
125
142
—
dB
Open-Loop Gain
DC Open-Loop Gain (large signal)
A
OL
125
147
—
dB
A
OL
133
155
—
dB
Output
Minimum Output Voltage Swing
Maximum Output Voltage Swing
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per amplifier
POR Trip Voltage
Note 1:
V
DD
I
Q
V
POR
2.3
450
1.15
—
620
—
5.5
800
1.65
V
µA
V
I
O
= 0
V
OL
V
OH
I
SC
I
SC
—
V
SS
+ 5
V
SS
+
15
—
—
—
mV
mV
mA
mA
V
DD
– 15 V
DD
−
5
—
—
±12
±22
2:
Set by design and characterization. Due to thermal junction and other effects in the production
environment, these parts can only be screened in production (except TC
1
; see
Appendix B: “Offset
Related Test Screens”).
Figure 2-18
shows how V
CML
and V
CMH
changed across temperature for the first production lot.
DS25007B-page 4
©
2011 Microchip Technology Inc.
MCP6V26/7/8
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.3V to +5.5V, V
SS
= GND,
V
CM
= V
DD
/3, V
OUT
= V
DD
/2, V
L
= V
DD
/2, R
L
= 10 kΩ to V
L
, C
L
= 60 pF and CS = GND (refer to
Figure 1-5
and
Figure 1-6).
Parameters
Amplifier AC Response
Gain Bandwidth Product
Slew Rate
Phase Margin
Amplifier Noise Response
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Amplifier Distortion (Note
1)
Intermodulation Distortion (AC)
Amplifier Step Response
Start Up Time
Offset Correction Settling Time
Output Overdrive Recovery Time
t
STR
t
STL
t
ODR
—
—
—
75
150
45
—
—
—
µs
µs
µs
G = +1, V
OS
within 50 µV of its final value
(Note
2)
G = +1, V
IN
step of 2V,
V
OS
within 50 µV of its final value
G = -100, ±0.5V input overdrive to V
DD
/2,
V
IN
50% point to V
OUT
90% point
(Note
3)
IMD
—
40
—
µV
PK
V
CM
tone = 50 mV
PK
at 1 kHz,
G
N
= 1
E
ni
E
ni
e
ni
e
ni
i
ni
—
—
—
—
—
0.32
1.0
50
29
0.6
—
—
—
—
—
µV
P-P
µV
P-P
nV/√Hz
nV/√Hz
fA/√Hz
f = 0.01 Hz to 1 Hz
f = 0.1 Hz to 10 Hz
f < 5 kHz
f = 100 kHz
GBWP
SR
PM
—
—
—
2.0
1.0
65
—
—
—
MHz
V/µs
°
G = +1
Sym
Min
Typ
Max
Units
Conditions
Note 1:
2:
3:
These parameters were characterized using the circuit in
Figure 1-7.
In
Figure 2-37
and
Figure 2-38,
there
is an IMD tone at DC, a residual tone at 1 kHz, other IMD tones and clock tones.
High gains behave differently; see
Section 4.3.3, Offset at Power Up.
t
ODR
includes some uncertainty due to clock edge timing.
©
2011 Microchip Technology Inc.
DS25007B-page 5
