UNISONIC TECHNOLOGIES CO., LTD
MCR100
SENSITIVE GATE SILICON
CONTROLLED RECTIFIERS
REVERSE BLOCKING
THYRISTORS
DESCRIPTION
PNPN devices designed for high volume, line-powered
consumer applications such as relay and lamp drivers, small motor
controls, gate drivers for larger thyristors, and sensing and
detection circuits.
1
3
2
1
SCR
1
SOT-89
SOT-23
TO-92
FEATURES
* Sensitive gate allows triggering by micro controllers and other
logic circuits
* Blocking voltage to 600V
* On-state current rating of 0.8A RMS at 80°C
* High surge current capability – 10A
* Minimum and maximum values of I
GT
, V
GT
and I
H
specified for
ease of design
* Immunity to dV/dt – 20V/μsec minimum at 110°C
* Glass-passivated surface for reliability and uniformity
Lead-free:
MCR100L
Halogen-free:MCR100GG
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
MCR100-4-x-AB3-R MCR100L-4-x-AB3-R
MCR100-4-x-AE3-R MCR100L-4-x-AE3-R
MCR100-4-x-T92-B MCR100L-4-x-T92-B
MCR100-4-x-T92-K MCR100L-4-x-T92-K
MCR100-6-x-AB3-R MCR100L-6-x-AB3-R
MCR100-6-x-AE3-R MCR100L-6-x-AE3-R
MCR100-6-x-T92-B MCR100L-6-x-T92-B
MCR100-6-x-T92-K MCR100L-6-x-T92-K
MCR100-8-x-AB3-R MCR100L-8-x-AB3-R
MCR100-8-x-AE3-R MCR100L-8-x-AE3-R
MCR100-8-x-T92-B MCR100L-8-x-T92-B
MCR100-8-x-T92-K MCR100L-8-x-T92-K
Note: Pin assignment: G: Gate K: Cathode
MCR100L-4-x-AB3-R
(1) Packing Type
(2) Package Type
(3) Rank
(4) Lead Plating
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) AB3: SOT-89, AE3: SOT-23, T92: TO-92
(3) x: Refer to CLASSIFICATION OF I
GT
(4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn
Halogen Free
MCR100G-4-x-AB3-R
MCR100G-4-x-AE3-R
MCR100G-4-x-T92-B
MCR100G-4-x-T92-K
MCR100G-6-x-AB3-R
MCR100G-6-x-AE3-R
MCR100G-6-x-T92-B
MCR100G-6-x-T92-K
MCR100G-8-x-AB3-R
MCR100G-8-x-AE3-R
MCR100G-8-x-T92-B
MCR100G-8-x-T92-K
A: Anode
Package
SOT-89
SOT-23
TO-92
TO-92
SOT-89
SOT-23
TO-92
TO-92
SOT-89
SOT-23
TO-92
TO-92
Pin assignment
1
2
3
G
A
K
G
K
A
K
G
A
K
G
A
G
A
K
G
K
A
K
G
A
K
G
A
G
A
K
G
K
A
K
G
A
K
G
A
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Reel
Tape Reel
Tape Box
Bulk
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MCR100
MARKING FOR SOT-23
MCR100-4
MCR100-6
MCR100-8
SCR
R4
L: Lead Free
G: Halogen Free
R6
L: Lead Free
G: Halogen Free
R8
L: Lead Free
G: Halogen Free
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UNISONIC TECHNOLOGIES CO., LTD
MCR100
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak Repetitive Off-State Voltage(Note 1)
(T
J
=-40 ~ 110°С, Sine Wave, 50 ~ 60Hz;
Gate Open)
SYMBOL
MCR100-4
V
DRM
,V
RRM
MCR100-6
MCR100-8
On-Sate RMS Current (Tc=80°С) 180°С Condition Angles
I
T(RMS)
Peak Non-Repetitive Surge Current
I
TSM
10
A
(1/2 cycle, Sine Wave, 60Hz, T
J
=25°С)
Circuit Fusing Considerations (t=8.3 ms)
I
2
t
0.415
A
2
s
Forward Peak Gate Power (T
A
=25°С, Pulse Width
≤1.0µs)
P
GM
0.1
W
Forward Average Gate Power (T
A
=25°С, t=8.3ms)
P
G(AV)
0.1
W
Peak Gate Current – Forward (T
A
=25°С, Pulse Width≤1.0μs)
I
GM
1
A
Peak Gate Voltage – Reverse (T
A
=25°С, Pulse Width≤1.0μs)
V
GRM
5
V
Operating Junction Temperature Range
T
J
-40 ~ +110
°С
(Rated V
RRM
and V
DRM
)
Storage Temperature Range
T
STG
-40 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RATINGS
200
400
600
0.8
UNIT
V
V
V
A
SCR
THERMAL DATA
PARAMETER
Junction to Ambient
TO-92
SOT-23/SOT-89
SYMBOL
θ
JA
MAX
200
400
UNIT
°С/W
°С/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise stated)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Peak Forward or Reverse Blocking T
C
=25°С
V
D
=Rated V
DRM
and V
RRM
;
10
μA
I
DRM
, I
RRM
Current
R
GK
=1kΩ
T
C
=125°С
100
μA
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 2)
V
TM
I
TM
=1A Peak @ T
A
=25°С
1.7
V
Gate Trigger Current (Continuous DC)(Note3)
I
GT
V
AK
=7Vdc, R
L
=100Ω, T
C
=25°С
40
200
μA
V
AK
=7Vdc, initiating
T
C
=25°С
0.5
5
mA
Holding Current (Note 4)
I
H
current=20mA
10
mA
T
C
=-40°С
T
C
=25°С
0.6
10
mA
I
L
Latch Current
V
AK
=7V, Ig=200μA
T
C
=-40°С
15
mA
Gate Trigger Voltage (continuous
T
C
=25°С
0.62 0.8
V
V
GT
V
AK
=7Vdc, R
L
=100Ω
dc) (Note 3)
T
C
=-40°С
1.2
V
DYNAMIC CHARACTERISTICS
V
D
=Rated V
DRM
, Exponential
Critical Rate of Rise of Off-State Voltage
d
V
/dt Waveform, R
GK
=1000Ω,
20
35
V/μs
T
J
=110°С
I
PK
=20A; Pw=10μsec;
50 A/μs
Critical Rate of Rise of On-State Current
di/dt
diG/dt=1A/μsec, Igt=20mA
Notes: 1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the
anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of
the devices are exceeded.
2. Indicates Pulse Test Width≤1.0ms, duty cycle
≤1%
3. R
GK
=1000Ω included in measurement.
4. Does not include R
GK
in measurement
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MCR100
VOLTAGE CURRENT CHARACTERISTIC OF SCR
PARAMETER
Peak Repetitive Off Stat Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
+Current
SYMBOL
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Anode+
V
TM
On State
I
RRM
at V
RRM
I
H
SCR
+Voltage
Reverse Blocking
Region (off state)
Reverse Avalanche
Region Anode-
I
DRM
at V
DRM
Forward Blocking
Region (off state)
CLASSIFICATION OF I
GT
RANK
RANGE
B
48~105μA
C
95~200μA
AA
8~16μA
AB
14~21μA
AC
19~25μA
AD
23~52μA
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MCR100
TYPICAL CHARACTERISTICS
Typical Gate Trigger Current vs.
Junction Temperature
100
90
Gate Trigger Current (µA)
Gate Trigger Voltage (V)
80
70
60
50
40
30
20
10
-40 -25 -10 5 20 35 50 65 80 95 110
Junction Temperature, T
J
(℃)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25 -10 5 20 35 50 65 80 95 110
Junction Temperature, T
J
(℃)
Typical Gate Trigger Voltage vs.
Junction Temperature
SCR
Typical RMS Curent Derating
120
110
100
90
80
70
60
50
40
0
120
°
30
°
60
°
90
°
0.1
0.2
0.3
0.5
0.4
RMS On-State Current, I
T(RMS)
(A)
180
°
1
10
Typical On-State Characteristics
MAXIMUM@T
J
=25℃
MAXIMUM@T
J
=110℃
0.1
0.5 0.8 1.11.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
Instantaneous On-State Voltage, V
T
(V)
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