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MCR101-4C

Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-92

器件类别:模拟混合信号IC    触发装置   

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

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器件参数
参数名称
属性值
厂商名称
UNISONIC TECHNOLOGIES CO.,LTD
包装说明
CYLINDRICAL, O-PBCY-T3
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
SENSITIVE GATE
配置
SINGLE
关态电压最小值的临界上升速率
20 V/us
最大直流栅极触发电流
0.2 mA
最大直流栅极触发电压
0.8 V
最大维持电流
10 mA
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-T3
最大漏电流
0.1 mA
通态非重复峰值电流
10 A
元件数量
1
端子数量
3
最高工作温度
110 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
最大均方根通态电流
0.8 A
断态重复峰值电压
200 V
重复峰值反向电压
200 V
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
BOTTOM
触发设备类型
SCR
文档预览
UTC MCR101
SENSITIVE GATE SILICON
CONTROLLED RECTIFIERS
REVERSE BLOCKING
THYRISTORS
DESCRIPTION
PNPN devices designed for high volume,
line-powered consumer applications such as relay
and lamp drivers, small motor controls, gate drivers
for larger thyristors, and sensing and detection
circuits. Supplied in an inexpensive plastic TO-92
package which is readily adaptable for use in
automatic insertion equipment.
1
SCR
TO-92
DESCRIPTION
*Sensitive Gate Allows Triggering by Micro controllers
and Other Logic circuits
*Blocking Voltage to 600V
*On-State Current Rating of 0.8A RMS at 80°C
*High Surge Current Capability – 10A
*Minimum and Maximum Values of IGT, VGT and IH
Specified for Ease of Design
*Immunity to dV/dt – 20V/µsec Minimum at 110°C
*Glass-Passivated Surface for Reliability and
Uniformity
1: GATE
2: ANODE
3:CATHODE:
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Lead Solder Temperature (<1/16” from case, 10 secs max)
SYMBOL
R
θJC
R
θJA
T
L
MAX
75
200
260
UNIT
°C/W
°C/W
°C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak Repetitive Off-State Voltage(note)
(T
J
=-40 to 110°C, Sine Wave, 50 to 60Hz; Gate Open)
MCR101-4
MCR101-6
MCR101-8
On-Sate RMS Current
(Tc=80°C) 180° Condition Angles
Peak Non-Repetitive Surge Current
(1/2 cycle, Sine Wave, 60Hz, T
J
=25°C)
Circuit Fusing Considerations (t=8.3 ms)
SYMBOL
MAX
UNIT
V
DRM,
V
RRM
200
400
600
0.8
10
0.415
V
I
T(RMS)
I
TSM
I
2
t
A
A
A
2
s
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R301-009,B
UTC MCR101
PARAMETER
Forward Peak Gate Power (T
A
=25°C, Pulse Width
≤1.0µs)
Forward Average Gate Power (T
A
=25°C, t=8.3ms)
Peak Gate Current – Forward (T
A
=25°C, Pulse Width≤1.0µs)
Peak Gate Voltage – Reverse (T
A
=25°C, Pulse Width≤1.0µs)
Operating Junction Temperature Range @ Rated V
RRM
and V
DRM
SCR
SYMBOL
P
GM
P
G(AV)
I
GM
V
GRM
T
J
MAX
0.1
0.1
1
5
-40 to +110
UNIT
W
W
A
V
°C
Storage Temperature Range
Tstg
-40 to +150
°C
Note: V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.
ELECTRICAL CHARACTERISTICS
(Tj=25°C, unless otherwise stated)
PARAMETER
OFF CHARACTERISTICS
Peak Forward or Reverse Blocking V
D
=Rated V
DRM
and V
RRM
; R
GK
=1kΩ
Current
Tc=25°C
Tc=125°C
ON CHARACTERISTICS
Peak Forward On-State Voltage
(Note1)
Gate Trigger Current (Continuous
dc)(note2)
I
TM
=1A Peak @ T
A
=25°C
V
AK
=7Vdc, R
L
=100Ω, T
C
=25°C
V
TM
I
GT
I
H
I
L
40
0.5
0.6
1.7
200
5
10
10
15
0.8
1.2
V
µA
mA
mA
I
DRM
, I
RRM
10
100
µA
TEST CONDITION
SYMBOL MIN TYP MAX UNIT
Holding Current (note 3) Tc=25
°C
V
AK
=7Vdc, initiating current=20mA
Tc=-40
°C
Latch Current
Gate Trigger Current
(continuous dc) (Note 2)
Tc=25
°C
V
AK
=7V, Ig=200µA
Tc=-40
°C
V
AK
=7Vdc, R
L
=100Ω
Tc=25
°C
Tc=-40
°C
V
D
=Rated V
DRM
, Exponential
Waveform, R
GK
=1000Ω, T
J
=110°C
V
GT
0.62
V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State
Voltage
dV/dt
di/dt
20
35
50
V/µs
A/µs
Critical Rate of Rise of On-State
I
PK
=20A; Pw=10µsec;
Current
diG/dt=1A/µsec, Igt=20mA
Notes: 1. Indicates Pulse Test Width≤1.0ms, duty cycle
≤1%
2. R
GK
=1000Ω included in measurement.
3. Does not include R
GK
in measurement.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-009,B
UTC MCR101
VOLTAGE CURRENT CHARACTERISTIC OF SCR
SYMBOL
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
PARAMETER
Peak Repetitive Off Stat Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
SCR
CLASSIFICATION OF I
GT
RANK
RANGE
B
48~105µA
C
95~200µA
AA
8~16µA
AB
14~21µA
AC
19~25µA
AD
23~52µA
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R301-009,B
UTC MCR101
SCR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R301-009,B
UTC MCR101
SCR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
5
QW-R301-009,B
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