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MCR22-5

Silicon Controlled Rectifiers

厂商名称:Motorola ( NXP )

厂商官网:https://www.nxp.com

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCR22-2/D
Silicon Controlled Rectifiers
. . . designed and tested for repetitive peak operation required for CD ignition, fuel
ignitors, flash circuits, motor controls and low-power switching applications.
150 Amperes for 2
µs
Safe Area
High dv/dt
Very Low Forward “On” Voltage at High Current
Low-Cost TO-226AA (TO-92)
MCR22 2
thru
MCR22 8
SCRs
1.5 AMPERES RMS
50 thru 600 VOLTS
G
A
K
K
G
A
CASE 29-04
(TO-226AA)
STYLE 10
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage
(RGK = IK, TJ = 25 to 125°C)
MCR22-2
MCR22-3
MCR22-4
MCR22-6
MCR22-8
On-State Current RMS
(All Conduction Angles)
Peak Non-repetitive Surge Current, TA = 25°C
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Power, TA = 25°C
Average Gate Power, TA = 25°C
Peak Forward Gate Current, TA = 25°C
(300
µs,
120 PPS)
Peak Reverse Gate Voltage
Operating Junction Temperature Range @ Rated VRRM and VDRM
Storage Temperature Range
Lead Solder Temperature
(Lead Length
1/16
I
from case, 10 s Max)
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IFGM
VRGM
TJ
Tstg
Symbol
VDRM,
VRRM
50
100
200
400
600
1.5
15
0.9
0.5
0.1
0.2
5
–40 to +125
–40 to +150
+230
Amps
Amps
A2s
Watt
Watt
Amp
Volts
°C
°C
°C
Value
Unit
Volts
q
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
©
Motorola, Inc. 1995
1
MCR22 2 thru MCR22 8
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R
θJC
R
θJA
Max
50
160
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted. RGK = 1000 Ohms.)
Characteristic
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM)
Forward “On” Voltage
(ITM = 1 A Peak)
Gate Trigger Current (Continuous dc)(1)
(Anode Voltage = 6 Vdc, RL = 100 Ohms)
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 7 Vdc, RL = 100 Ohms)
(Anode Voltage = Rated VDRM, RL = 100 Ohms)
Holding Current
(Anode Voltage = 12 Vdc)
Forward Voltage Application Rate
(TC = 125°C)
1. RGK Current Not Included in Measurement.
TC = 25°C
TC = –40°C
TC = 25°C
TC = –40°C
TC = 125°C
TC = 25°C
TC = –40°C
TC = 25°C
TC = 125°C
VTM
IGT
VGT
VGD
IH
dv/dt
Symbol
IDRM, IRRM
0.1
1.2
30
2
25
10
200
1.7
200
500
0.8
1.2
5
10
Min
Typ
Max
Unit
µA
µA
Volts
µA
Volts
mA
V/µs
CURRENT DERATING
TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (
°
C)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
FIGURE 1 — MAXIMUM CASE TEMPERATURE
FIGURE 2 — MAXIMUM AMBIENT TEMPERATURE
140
140
120
100
80
60
40
20
0
0
α
= 180°
α
= CONDUCTION ANGLE
0.2
0.4
0.6
dc
100
α
= 180°
α
= CONDUCTION
ANGLE
dc
60
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
0.8
1.0
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
2
Motorola Thyristor Device Data
MCR22 2 thru MCR22 8
FIGURE 3 — TYPICAL FORWARD VOLTAGE
5.0
3.0
2.0
TJ = 125°C
25°C
1.0
I T , INSTANTANEOUS ON-STATE CURRENT (AMP)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0
0.5
1.0
1.5
2.0
2.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
FIGURE 4 — THERMAL RESPONSE
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1000
2000
5000
10000
Motorola Thyristor Device Data
3
MCR22 2 thru MCR22 8
TYPICAL CHARACTERISTICS
FIGURE 5 — GATE TRIGGER VOLTAGE
VG , GATE TRIGGER VOLTAGE (VOLTS)
0.8
I GT GATE TRIGGER CURRENT (
µ
A)
0.7
VAK = 7.0 V
RL = 100
100
50
30
20
10
5.0
3.0
2.0
FIGURE 6 — TYPICAL GATE TRIGGER CURRENT
0.6
0.5
0.4
0.3
–75
–50
–25
0
25
50
75
100
125
1.0
–40
–20
0
20
40
60
80
100
120
140
160
TJ, JUNCTION TEMPERATURE (°C)
TJ JUNCTION TEMPERATURE (°C)
FIGURE 7 — HOLDING CURRENT
10
I H , HOLDING CURRENT (mA)
P(AV) MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
FIGURE 8 — POWER DISSIPATION
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
dc
30°
60°
90°
120° 180°
5.0
VAK = 12 V
RL = 100
2.0
1.0
–40
–20
0
20
40
60
80
100
120
140
160
TJ, JUNCTION TEMPERATURE (°C)
4
Motorola Thyristor Device Data
MCR22 2 thru MCR22 8
PACKAGE DIMENSIONS
A
R
P
SEATING
PLANE
B
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
F
L
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
X X
G
H
V
1
D
J
C
SECTION X–X
N
N
CASE 29-04
(TO–226AA)
Motorola Thyristor Device Data
5
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参数对比
与MCR22-5相近的元器件有:MCR22-8、MCR22-6、MCR22-7、MCR22-4、MCR22-2、MCR22、MCR22-3。描述及对比如下:
型号 MCR22-5 MCR22-8 MCR22-6 MCR22-7 MCR22-4 MCR22-2 MCR22 MCR22-3
描述 Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers
是否Rohs认证 - 不符合 不符合 - 不符合 不符合 - 不符合
厂商名称 - Motorola ( NXP ) Motorola ( NXP ) - Motorola ( NXP ) Motorola ( NXP ) - Motorola ( NXP )
Reach Compliance Code - unknow unknow - unknown unknown - unknown
标称电路换相断开时间 - 40 µs 40 µs - 40 µs 40 µs - 40 µs
配置 - SINGLE SINGLE - SINGLE SINGLE - SINGLE
最大直流栅极触发电流 - 0.2 mA 0.2 mA - 0.2 mA 0.2 mA - 0.2 mA
最大直流栅极触发电压 - 0.8 V 0.8 V - 0.8 V 0.8 V - 0.8 V
最大维持电流 - 5 mA 5 mA - 5 mA 5 mA - 5 mA
JEDEC-95代码 - TO-92 TO-92 - TO-226AA TO-226AA - TO-226AA
JESD-30 代码 - O-PBCY-W3 O-PBCY-W3 - O-PBCY-T3 O-PBCY-T3 - O-PBCY-T3
JESD-609代码 - e0 e0 - e0 e0 - e0
元件数量 - 1 1 - 1 1 - 1
端子数量 - 3 3 - 3 3 - 3
最高工作温度 - 125 °C 125 °C - 125 °C 125 °C - 125 °C
最低工作温度 - -40 °C -40 °C - -40 °C -40 °C - -40 °C
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
封装形状 - ROUND ROUND - ROUND ROUND - ROUND
封装形式 - CYLINDRICAL CYLINDRICAL - CYLINDRICAL CYLINDRICAL - CYLINDRICAL
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
认证状态 - Not Qualified Not Qualified - Not Qualified Not Qualified - Not Qualified
最大均方根通态电流 - 1.5 A 1.5 A - 1.5 A 1.5 A - 1.5 A
重复峰值关态漏电流最大值 - 10 µA 10 µA - 10 µA 10 µA - 10 µA
断态重复峰值电压 - 600 V 400 V - 200 V 50 V - 100 V
重复峰值反向电压 - 600 V 400 V - 200 V 50 V - 100 V
表面贴装 - NO NO - NO NO - NO
端子面层 - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
端子形式 - WIRE WIRE - THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE
端子位置 - BOTTOM BOTTOM - BOTTOM BOTTOM - BOTTOM
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
触发设备类型 - SCR SCR - SCR SCR - SCR
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