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MCR3835-2

Silicon Controlled Rectifier Reverse Blocking Triode Thyristor

厂商名称:New Jersey Semiconductor

厂商官网:http://www.njsemi.com

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,
Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
Silicon Controlled Rectifier
Reverse Blocking Triode Thyristor
.,. designed for industrial and consumer applications such as power supplies,
battery chargers, temperature, motor, light and welder controls.
• Economical for a Wide Range of Uses
• High Surge Current — IjSM
= 35
° Amps
• Low Forward "On" Voltage — 1.2 V (Typ) @ IJM = 35 Amps
• Practical Level Triggering and Holding Characteristics — 10 rnA {Typ) @
T
C
= 25°C
• Rugged Construction In Either Pressfit or Stud Package
• Glass Passivated Junctions for Maximum Reliability
MCR3835
Series
MCR3935
Series
SCRs
35 AMPERES RMS
50 thru 800 VOLTS
MAXIMUM RATINGS
Rating
Peak Repetitive Forward and Reverse Blocking Voltage
Note 1
MCR3835-2
-8
-10
Symbol
VDRM
VRRM
Value
50
600
800
50
100
200
400
600
800
Unit
Volts
UU-2U3)
STYLE 1
MCR3835 Series
MCR393B-2
-3
-4
-6
-8
-10
CASE 175-03
STYLE 1
MCR3935 Series
Volts
Peak Non-Repetitive Reverse Blocking Voltage
(t s; 5 ms)
MCR3835-2
-8
-10
VRSM
35
700
900
76
150
300
GOO
700
900
MCR3935-2
-3
-4
•6
-8
-10
Forward Current RMS
35
Amps
'TIRMS)
350
Peak Surge Current
Amps
ITSM
(One Cycle, 60 Hz, Tj = -40 to + 125°C)
610
A2
S
ft
Circuit Fusing
(Tj = -40 to -t- 100°C, t = 1 to 8.3 ms)
5
Watts
Peak Gate Power
PGFM
0.6
Watt
Average Gate Power
PQF(AV)
|
Peak Forward Gate Current
2
Amps
IGFM
10
Volt
Peak Gate Voltage — Forward
VGFM
10
Reverse
VGRM
-40 to +125
•C
Operating Junction Temperature Range
TJ
Note 1. VQRM
an
d VRRM for all types can be applied on a continuous dc basis without Incurring damage.
Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to
the gate concurrently with a negative potential on the anode.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished
by
NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Ounlifv
MCR3835 Series • MCR3935 Series
MAXIMUM RATINGS
Rating
Storage Temperature Range
Stud Torque
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MCR3835
MCR3936
Symbol
R&JC
1.2
1.3
Symbol
T
stg
Value
Unit
-40 to +150
30
•c
in. Ib.
-
Max
Unit
•c/w
ELECTRICAL CHARACTERISTICS
(T
c
= 26°C unless otherwise noted.)
Characteristic
Peak Forward or Reverse Blocking Current
(Rated V
DRM
or VRR
M
, flate open) Tj = 26"C
Tj = 100°C
Forward "On" Voltage
(I
TM
- 35 A Peak)
Gate Trigger Current (Continuous dc)
Symbol
Mln
-
TVP
1
Max
10
5
1.5
40
Unit
IDRM- IRRM
/*A
mA
Volts
VTM
IQT
VGT
VGD
1.2
10
mA
Volts
(VD - 7 v, HL - 100 ni
Gate Trigger Voltage (Continuous dc)
(V
D
= 7 v, R
L
= 100 n)
0.7
0.2
10
1
1.5
50
mA
MS
(Vo = Rated VDRM,
R
L =
10
°
ft
'
T
J "
100
°
c
l
Holding Current
(VD = 7 V, gate open)
Turn-On Time (tj + t
r
)
(I
TM
= 35 Adc, IQT = 40 mAdc)
Turn-Off Time
<I
TM
= 10A, |R = 10A)
IH
ton
<q
Its
-
20
30
50
-
V/jis
(i
TM
= 10 A, IR = 10 A. TJ = ioo°o
Forward Voltage Application Rate
(V
D
= Rated V
DRM
, Tj = 100-C)
dv/dt
FIGURE 1 -CURRENT DERATING
90
^H
&^
r
1CR3B3S
^\^
i
m
^
3-
?o
is
Bll
50
40
\
^
=
\
an
xJ
K
xlx
i
'
*?%?•
X
\
dc
FIGURE 2 - TYPICAL POWER DISSIPATION
d
f
180
((
/^.
y^
'
«-a-»
/
OHDU
;TION
,NGLE
v
91
/ /
/
{
3a
n
MCR3! 135 must be derated on addition
IOK, >.
., in Figure 1, the max TC of
MCR3135at24Adcr!s70°C,:deratin
of 30"
, below Tj max. MCR3935de-
rating
v
njuld be 33° C. inj TC mix E}°
c.
vx
s/
'//
w.
"™" "^^
40
4.U
8.0
12
16
20
24
28
32
^
A
&
r
4.0
8.0
o- CONDUCTION ANGLE
12
IB
20
24
28
32
36
ITIAV}, AVERAGE FORWARD CURRENT (AMP]
IT(AV). AVERAGE FORWARD CURRENT (AMP)
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