Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off-state voltage
(1)
Peak repetitive reverse voltage
(T
J
= -40 to +125°C)
MCR8D
MCR8M
MCR8N
On-state RMS current
(all conduction angles)
Peak non-repetitive surge current
(one half-cycle, 60Hz, T
J
= 125°C)
Circuit fusing
(t = 8.3ms)
Peak gate power
(pulse width
≤
1.0µs, T
C
= 80°C)
Average gate power
(t = 8.3ms, T
C
= 80°C)
Peak gate current
(pulse width
≤
1.0µs, T
C
= 80°C)
Operating temperature range
Storage temperature range
Symbol
V
DRM
V
RRM
400
600
800
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
8
80
26.5
5
0.5
2
-40 to +125
-40 to +150
V
Value
Unit
A
A
A
2
s
W
W
A
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Maximum lead temperature for soldering
purposes 1/8” from case for 10s
Symbol
R
ӨJC
R
ӨJA
T
L
Maximum
2.0
62.5
260
Unit
°C/W
°C/W
°C
Note 1: V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
预计到2027年，全球电动汽车充电站市场规模迅速扩展，而亚太地区电动汽车销量的迅速成长推动了全球电动汽车充电站市场的成长。意法半导体（ ST ）产品可支持此一市场／应用。本文介绍主要系统架构以及主要适用的 ST 产品。 预计到2027年，全球电动汽车充电站市场规模将从2020年估计的2,115,000个成长至30,758,000个，复合年均成长率高达46.6%。该报告的基准年为2019年，预测...[详细]
嵌入式系统
