GlobalOptoisolator™
6-Pin DIP Optoisolators
Transistor Output
The MCT and MCT2E devices consist of a gallium arsenide infrared emitting
diode optically coupled to a monolithic silicon phototransistor detector.
Applications
•
General Purpose Switching Circuits
•
Interfacing and coupling systems of different potentials and impedances
•
I/O Interfacing
•
Solid State Relays
•
Monitor and Detection Circuits
•
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating
INPUT LED
Reverse Voltage
Forward Current — Continuous
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
Emitter–Collector Voltage
Collector–Base Voltage
Collector Current — Continuous
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
Soldering Temperature (10 sec, 1/16″ from case)
VISO
PD
TA
Tstg
TL
7500
250
2.94
– 55 to +100
– 55 to +150
260
Vac(pk)
mW
mW/°C
°C
°C
°C
VCEO
VECO
VCBO
IC
PD
30
7
70
150
150
1.76
Volts
Volts
Volts
mA
mW
mW/°C
VR
IF
PD
3
60
120
1.41
Volts
mA
mW
mW/°C
3
Symbol
Value
Unit
1
2
MCT2
MCT2E
6
1
STANDARD THRU HOLE
SCHEMATIC
6
5
4
PIN 1.
2.
3.
4.
5.
6.
LED ANODE
LED CATHODE
N.C.
EMITTER
COLLECTOR
BASE
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
Motorola Optoelectronics Device Data
1
MCT2, MCT2E
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)(1)
Characteristic
INPUT LED
Forward Voltage (IF = 20 mA)
TA = 25°C
TA = –55°C
TA = 100°C
VF
—
—
—
—
—
1.23
1.35
1.15
0.01
18
1.5
—
—
10
—
Volts
Symbol
Min
Typ
(1)
Max
Unit
Reverse Leakage Current (VR = 3 V)
Capacitance (V = 0 V, f = 1 MHz)
OUTPUT TRANSISTOR
Collector–Emitter Dark Current (VCE = 10 V)
Collector–Base Dark Current (VCB = 10 V)
Collector–Emitter Breakdown Voltage (IC = 1 mA)
Collector–Base Breakdown Voltage (IC = 10
µA)
Emitter–Collector Breakdown Voltage (IE = 100
µA)
DC Current Gain (IC = 5 mA, VCE = 5 V)
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0 V)
Collector–Base Capacitance (f = 1 MHz, VCB = 0 V)
Emitter–Base Capacitance (f = 1 MHz, VEB = 0 V)
COUPLED
Output Collector Current (IF = 10 mA, VCE = 10 V)
Collector–Emitter Saturation Voltage (IC = 2 mA, IF = 16 mA)
Turn–On Time (IF = 10 mA, VCC = 10 V, RL = 100
Ω)
(3)
Turn–Off Time (IF = 10 mA, VCC = 10 V, RL = 100
Ω,)
(3)
Rise Time (IF = 10 mA, VCC = 10 V, RL = 100
Ω)
(3)
Fall Time (IF = 10 mA, VCC = 10 V, RL = 100
Ω)
(3)
Isolation Voltage (f = 60 Hz, t = 1 sec)(4)
Isolation Resistance (V = 500 V)(4)
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)
1.
2.
3.
4.
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
IR
CJ
µA
pF
ICEO
ICBO
V(BR)CEO
V(BR)CBO
V(BR)ECO
hFE
CCE
CCB
CEB
IC (CTR)(2)
VCE(sat)
ton
toff
tr
tf
VISO
RISO
CISO
—
—
—
—
30
70
7
—
—
—
—
1
1
0.2
100
45
100
7.8
500
7
19
9
50
—
20
—
—
—
—
—
—
—
—
nA
µA
nA
Volts
Volts
Volts
—
pF
pF
pF
2 (20)
—
—
—
—
—
7500
1011
—
7 (70)
0.19
2.8
4.5
1.2
1.3
—
—
0.2
—
0.4
—
—
—
—
—
—
—
mA (%)
Volts
µs
µs
µs
µs
Vac(pk)
Ω
pF
Always design to the specified minimum/maximum electrical limits (where applicable).
Current Transfer Ratio (CTR) = IC/IF x 100%.
For test circuit setup and waveforms, refer to Figure 11.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
MCT2, MCT2E
TYPICAL CHARACTERISTICS
2
VF, FORWARD VOLTAGE (VOLTS)
PULSE ONLY
PULSE OR DC
1.8
I C , OUTPUT COLLECTOR CURRENT (NORMALIZED)
10
NORMALIZED TO:
IF = 10 mA
1
1.6
1.4
TA = –55°C
25°C
100°C
1
10
100
IF, LED FORWARD CURRENT (mA)
1000
1.2
1
0.1
0.01
0.5
1
2
5
10
20
IF, LED INPUT CURRENT (mA)
50
Figure 1. LED Forward Voltage versus Forward Current
Figure 2. Output Current versus Input Current
I C , OUTPUT COLLECTOR CURRENT (NORMALIZED)
28
IC , COLLECTOR CURRENT (mA)
24
20
16
5 mA
12
8
4
0
0
1
2
3
4
5
6
7
8
9
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
2 mA
1 mA
IF = 10 mA
10
7
5
2
1
0.7
0.5
0.2
0.1
–60
–40
–20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
100
NORMALIZED TO TA = 25°C
Figure 3. Collector Current versus
Collector–Emitter Voltage
ICEO, COLLECTOR–EMITTER DARK CURRENT
(NORMALIZED)
Figure 4. Output Current versus Ambient Temperature
100
NORMALIZED TO:
VCE = 10 V
TA = 25°C
t, TIME (
µ
s)
50
20
10
5
2
1
0.1
RL = 1000
RL = 100
VCC = 10 V
100
10
VCE = 30 V
1
10 V
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
100
{
{
tr
tf
tf
tr
0.1
0.2
0.5
1
2
5
10
20
IF, LED INPUT CURRENT (mA)
50
100
Figure 5. Dark Current versus Ambient Temperature
Figure 6. Rise and Fall Times
(Typical Values)
MCT2, MCT2E
100
70
50
t on TURN–ON TIME (
µ
,
s)
20
10
7
5
RL = 1000
100
10
VCC = 10 V
100
70
50
t off TURN–OFF TIME (
µ
,
s)
20
RL = 1000
10
7
5
100
10
2
VCC = 10 V
2
1
0.1
0.2
0.5 0.7 1
2
5 7 10
IF, LED INPUT CURRENT (mA)
20
50 70 100
1
0.1
0.2
0.5 0.7 1
2
5 7 10
IF, LED INPUT CURRENT (mA)
20
50 70 100
Figure 7. Turn–On Switching Times
(Typical Values)
4
IF = 0
3
20
IB = 7
µA
6
µA
C, CAPACITANCE (pF)
5
µA
2
4
µA
3
µA
1
2
µA
1
µA
0
2
4
6
8
10
12
14
16
18
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
20
18
16
14
12
10
8
6
4
2
0
0.05 0.1
Figure 8. Turn–Off Switching Times
(Typical Values)
IC, TYPICAL COLLECTOR CURRENT (mA)
CLED
CCB
f = 1 MHz
CEB
CCE
0.2
0.5
1
2
5
V, VOLTAGE (VOLTS)
10
20
50
Figure 9. DC Current Gain (Detector Only)
Figure 10. Capacitances versus Voltage
TEST CIRCUIT
VCC = 10 V
RL = 100
Ω
IF = 10 mA
INPUT
OUTPUT
10%
WAVEFORMS
INPUT PULSE
OUTPUT PULSE
90%
tr
ton
tf
toff
Figure 11. Switching Time Test Circuit and Waveforms
MCT2, MCT2E
PACKAGE DIMENSIONS
–A–
6
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
DIM
A
B
C
D
E
F
G
J
K
L
M
N
INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.008
0.012
0.100
0.150
0.300 BSC
0
_
15
_
0.015
0.100
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.21
0.30
2.54
3.81
7.62 BSC
0
_
15
_
0.38
2.54
–B–
1
3
F
4 PL
N
C
L
–T–
SEATING
PLANE
K
G
J
6 PL
0.13 (0.005)
T A
M
M
E
6 PL
D
6 PL
0.13 (0.005)
M
M
T B
M
A
M
B
M
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
ANODE
CATHODE
NC
EMITTER
COLLECTOR
BASE
THRU HOLE
–A–
6
1
4
–B–
3
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.020
0.025
0.008
0.012
0.006
0.035
0.320 BSC
0.332
0.390
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.51
0.63
0.20
0.30
0.16
0.88
8.13 BSC
8.43
9.90
F
4 PL
H
C
L
–T–
G
E
6 PL
D
6 PL
0.13 (0.005)
M
J
K
6 PL
0.13 (0.005)
T A
M
M
SEATING
PLANE
T B
M
A
M
B
M
DIM
A
B
C
D
E
F
G
H
J
K
L
S
SURFACE MOUNT
微控制器 MCU
