MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
September 2009
MCT2M, MCT2EM, MCT210M, MCT271M
Phototransistor Optocouplers
Features
■
UL recognized (File # E90700, Vol. 2)
■
IEC60747-5-2 recognized (File # 102497)
Description
The MCT2XXM series optoisolators consist of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 6-pin dual in-line package.
– Add option V (e.g., MCT2VM)
Applications
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
Schematic
Anode 1
6 Base
Package Outlines
Cathode 2
5 Collector
No Connection 3
4 Emitter
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
www.fairchildsemi.com
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
V
R
I
F
(pk)
P
D
DETECTOR
I
C
V
CEO
P
D
Collector Current
Storage Temperature
Parameter
Value
-40 to +150
-40 to +100
260 for 10 sec
250
2.94
60
3
3
120
1.41
50
30
150
1.76
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
mA
V
mW
mW/°C
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current – Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
Collector-Emitter Voltage
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
www.fairchildsemi.com
2
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
Individual Component Characteristics
Symbol
EMITTER
V
F
Input Forward Voltage
I
F
= 20mA
MCT2M
MCT2EM
MCT271M
MCT210M
MCT2M
MCT2EM
MCT271M
MCT210M
ALL
MCT210M
MCT2M
MCT2EM
MCT271M
MCT210M
MCT2M
MCT2EM
MCT271M
MCT210M
ALL
ALL
ALL
8
70
120
V
30
100
V
1.25
1.50
V
Parameter
Test Conditions
Device
Min.
Typ.*
Max.
Units
T
A
= 0°C–70°C, I
F
= 40mA
I
R
Reverse Leakage
Current
V
R
= 3.0V
1.33
0.001
10
µA
T
A
= 0°C–70°C, V
R
= 6.0V
DETECTOR
BV
CEO
BV
CBO
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
I
C
= 1.0mA, I
F
= 0
T
A
= 0°C–70°C
I
C
= 10µA, I
F
= 0
T
A
= 0°C–70°C
BV
ECO
Emitter-Collector
Breakdown Voltage
I
E
= 100µA, I
F
= 0
30
7
10
V
T
A
= 0°C–70°C
I
CEO
I
CBO
C
CE
Collector-Emitter Dark
Current
Collector-Base Dark
Current
Capacitance
V
CE
= 10V, I
F
= 0
V
CE
= 5V, T
A
= 0°C–70°C
V
CB
= 10V, I
F
= 0
V
CE
= 0V, f = 1MHz
6
10
1
50
30
20
nA
µA
nA
pF
*All typical T
A
= 25°C
Isolation Characteristics
Symbol
V
ISO
R
ISO
C
ISO
Parameter
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
f = 60Hz, t = 1 sec.
V
I-O
= 500 VDC
Min
7500
10
11
Typ*
Max
Units
Vac(pk)
Ω
0.2
2
pF
*All typicals at T
A
= 25°C
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
www.fairchildsemi.com
3
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Electrical Characteristics
(Continued)
(T
A
= 25°C unless otherwise specified)
Transfer Characteristics
Symbol
CTR
Parameter
Output Collector
Current
Test Conditions
T
A
= 0°C–70°C
I
F
= 10mA, V
CE
= 10V
Device
MCT210M
MCT2M
MCT2EM
MCT271M
MCT210M
MCT2M
MCT2EM
MCT271M
MCT210M
Min.
150
20
45
50
Typ.*
Max.
Unit
%
DC CHARACTERISTICS
90
I
F
= 3.2mA to 32mA,
V
CE
= 0.4V, T
A
= 0°C–70°C
V
CE(SAT)
Collector-Emitter
Saturation Voltage
I
C
= 2mA, I
F
= 16mA
0.4
V
I
C
= 16mA, I
F
= 32mA,
T
A
= 0°C–70°C
AC CHARACTERISTICS
t
on
AC Characteristic Saturated
Turn-on Time from 5V to 0.8V
I
F
= 15mA, V
CC
= 5V,
R
L
= 2k
Ω
, R
B
= Open (Fig. 11)
I
F
= 20mA, V
CC
= 5 V,
R
L
= 2k
Ω
, R
B
= 100k
Ω
) (Fig. 11)
t
off
Saturated Turn-off Time from
SAT to 2.0 V
I
F
= 15mA, V
CC
= 5V,
R
L
= 2k
Ω
, R
B
= Open (Fig. 11)
I
F
= 20mA, V
CC
= 5V,
R
L
= 2k
Ω
, R
B
= 100k
Ω
(Fig. 11)
t
on
t
off
t
r
t
f
t
on
t
off
Turn-on Time
Turn-off Time
Rise Time
Fall Time
Saturated turn-on time
Saturated turn-off time
(Approximates a typical
TTL interface)
Saturated turn-on time
Saturated turn-off time
(Approximates a typical
low power TTL interface)
Saturated rise time
Saturated fall time
Saturated propagation
delay – HIGH to LOW
Saturated propagation
delay – LOW to HIGH
Non-saturated rise time
Non-saturated fall time
Non-saturated turn-on time
Non-saturated turn-off time
I
C
= 2mA, V
CC
= 5V,
R
L
= 100Ω (Fig. 11)
I
C
= 2mA, V
CC
= 5V,
R
L
= 100Ω (Fig. 20)
I
F
= 10mA, V
CC
= 10V,
R
L
= 100
Ω
I
F
= 10mA, V
CC
= 10V,
R
L
= 100
Ω
I
F
= 10mA, V
CC
= 10V,
R
L
= 100Ω
I
F
= 10mA, V
CC
= 10V,
R
L
= 100Ω
I
F
= 16mA, R
L
= 1.9kΩ,
V
CC
= 5V (Fig. 11)
MCT2M
MCT2EM
MCT2M
MCT2EM
MCT2M
MCT2EM
MCT2M
MCT2EM
MCT2M
MCT2EM
MCT2M
MCT2EM
MCT2M
MCT2EM
MCT2M
MCT2EM
MCT271M
1.1
1.3
50
20
2
2
2
1.5
1.0
48
µs
µs
µs
µs
µs
µs
µs
µs
t
on
t
off
I
F
= 16mA, R
L
= 4.7kΩ,
V
CC
= 5 V (Fig. 20)
MCT271M
1.0
98
µs
µs
t
r
t
f
T
PD (HL)
T
PD (LH)
t
r
t
f
t
on
t
off
I
F
= 16mA, R
L
= 560Ω,
V
CC
= 5V) (Fig. 11, 12)
I
F
= 16mA, R
L
= 2.7kΩ
(Fig. 11, 12)
MCT210M
1.0
11
1.0
50
µs
µs
µs
µs
µs
µs
7
7
µs
µs
MCT210M
MCT210M
MCT271M
2
2
2
2
*All typicals at T
A
= 25°C
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
www.fairchildsemi.com
4
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Min.
Typ.
Max.
Unit
I-IV
I-IV
55/100/21
2
175
1594
V
peak
CTI
V
PR
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = V
PR
, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
PR
, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275
V
peak
V
IORM
V
IOTM
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
850
6000
7
7
0.5
10
9
V
peak
V
peak
mm
mm
mm
Ω
RIO
Insulation Resistance at Ts, V
IO
= 500V
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
www.fairchildsemi.com
5
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