Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
OKI
Semiconductor
MD51V64165E
DESCRIPTION
FEDD51V64165E-03
Issue Date: Jun. 20, 2005
4,194,304-Word
×
16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
The MD51V64165E is a 4,194,304-word
×
16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MD51V64165E achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal
CMOS process. The MD51V64165E is available in a 50-pin plastic TSOP.
FEATURES
· 4,194,304-word
×
16-bit configuration
·
Single 3.3V power supply,
±0.3V
tolerance
·
Input : LVTTL compatible, low input capacitance
·
Output : LVTTL compatible, 3-state
·
Refresh :
RAS
only refresh
: 8,192 cycles/64ms
CAS
before
RAS
refresh, hidden refresh
: 4,096 cycles/64ms
·
Fast page mode with EDO, read modify write capability
·
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
· Packages
50-pin 400mil plastic TSOP
(
TSOPII50-P-400-0.80-1K
)
(Product : MD51V64165E-xxTA)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Family
t
RAC
50ns
60ns
t
AA
25ns
30ns
t
CAC
13ns
15ns
t
OEA
13ns
15ns
Cycle Time
(Min.)
84ns
104ns
Power Dissipation
Operating
(Max.)
504mW
432mW
Standby
(Max.)
1.8mW
MD51V64165E
1/16
FEDD51V64165E-03
OKI
Semiconductor
MD51V64165E
PIN CONFIGURATION (TOP VIEW)
V
CC
1
DQ1
2
DQ2
3
DQ3 4
DQ4 5
V
CC
6
DQ5 7
DQ6 8
DQ7 9
DQ8
10
NC
11
V
CC
12
WE
13
RAS
14
NC
15
NC
16
NC
17
NC
18
A0
19
A1
20
A2
21
A3
22
A4
23
A5
24
V
CC
25
V
SS
DQ16
DQ15
DQ14
DQ13
V
SS
DQ12
DQ11
DQ10
DQ9
NC
V
SS
38
LCAS
37
UCAS
36
OE
35
NC
34
NC
33
A12R
32
A11R
31
A10R
30
A9R
29
A8
28
A7
27
A6
26
V
SS
50
49
48
47
46
45
44
43
42
41
40
39
50-Pin Plastic TSOP
(K Type)
Pin Name
A0–A8, A9R–A12R
RAS
LCAS
UCAS
DQ1–DQ16
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Lower Byte Column Address Strobe
Upper Byte Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (3.3V)
Ground (0V)
No Connection
Note : The same power supply voltage must be provided to every V
CC
pin, and the same GND voltage level must
be provided to every V
SS
pin.
2/16
FEDD51V64165E-03
OKI
Semiconductor
MD51V64165E
FUNCTION TABLE
Input Pin
RAS
H
L
L
L
L
L
L
L
L
LCAS
*
H
L
H
L
L
H
L
L
UCAS
*
H
H
L
L
H
L
L
L
WE
*
*
H
H
H
L
L
L
H
OE
*
*
L
L
L
H
H
H
H
DQ Pin
Function Mode
DQ1-DQ8
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
Don’t Care
D
IN
High-Z
DQ9-DQ16
High-Z
High-Z
High-Z
D
OUT
D
OUT
Don’t Care
D
IN
D
IN
High-Z
Standby
Refresh
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
* : “H” or “L”
3/16
FEDD51V64165E-03
OKI
Semiconductor
MD51V64165E
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on Any Pin Relative to V
SS
Voltage V
CC
Supply Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D*
T
opr
T
stg
Value
–0.5 to V
CC
+0.5
–0.5 to 4.6
50
1
0 to 70
–55 to 150
Unit
V
V
mA
W
°C
°C
*: Ta = 25°C
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
3.0
0
2.0
−
0.3
*2
Typ.
3.3
0
Max.
3.6
0
V
CC
+ 0.3
0.8
*1
Unit
V
V
V
V
Notes: *1. The input voltage is V
CC
+ 1.0V when the pulse width is less than 20ns (the pulse width is with respect
to the point at which V
CC
is applied).
*2. The input voltage is V
SS
−
1.0V when the pulse width is less than 20ns (the pulse width respect to the
point at which V
SS
is applied).
PIN CAPACITANCE
(Vcc = 3.3V
±
0.3V, Ta = 25°C, f = 1 MHz)
Parameter
Input Capacitance (A0 – A8, A9R – A12R)
Input Capacitance
(RAS,
LCAS, UCAS, WE, OE)
Output Capacitance (DQ1 - DQ16)
Symbol
C
IN1
C
IN2
C
I/O
Min.
—
—
—
Max.
5
7
7
Unit
pF
pF
pF
4/16
