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MD51V65400E-50JA

描述:
Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-32
分类:
存储    存储   
文件大小:
198KB,共16页
制造商:
概述
Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-32
器件参数
参数名称
属性值
厂商名称
LAPIS Semiconductor Co Ltd
零件包装代码
SOJ
包装说明
SOJ, SOJ32,.44
针数
32
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
FAST PAGE
最长访问时间
50 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型
COMMON
JESD-30 代码
R-PDSO-J32
内存密度
67108864 bit
内存集成电路类型
FAST PAGE DRAM
内存宽度
4
功能数量
1
端口数量
1
端子数量
32
字数
16777216 words
字数代码
16000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
16MX4
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
SOJ
封装等效代码
SOJ32,.44
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
电源
3.3 V
认证状态
Not Qualified
刷新周期
4096
自我刷新
NO
最大待机电流
0.0005 A
最大压摆率
0.12 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
J BEND
端子节距
1.27 mm
端子位置
DUAL
文档预览
Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
OKI
Semiconductor
MD51V65400E
16,777,216-Word
×
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
FEDD51V65400E-03
Issue Date: Jul. 19, 2005
DESCRIPTION
The MSD51V65400E is a 16,777,216-word
×
4-bit dynamic RAM fabricated in Oki’s silicon-gate
CMOS technology. The MD51V65400E achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer
polysilicon/double-layer metal CMOS process. The MD51V65400E is available in a 32-pin plastic SOJ
or 32-pin plastic TSOP.
FEATURES
·
16,777,216-word
×
4-bit configuration
·
Single 3.3V power supply,
±0.3V
tolerance
·
Input : LVTTL compatible, low input capacitance
·
Output : LVTTL compatible, 3-state
·
Refresh :
RAS
only refresh:
:4096 cycles/64ms
CAS
before
RAS
refresh, hidden refresh :4096 cycles/64ms
·
Fast page mode, read modify write capability
·
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
· Packages
32-pin 400mil plastic SOJ
(
SOJ32-P-400-1.27
)
(Product : MD51V65400E-xxJA)
32-pin 400mil plastic TSOP
(
TSOPII32-P-400-1.27-K
)
(Product : MD51V65400E-xxTA)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Family
t
RAC
50ns
60ns
t
AA
25ns
30ns
t
CAC
13ns
15ns
t
OEA
13ns
15ns
Cycle Time
(Min.)
90ns
110ns
Power Dissipation
Operating
(Max.)
504mW
432mW
Standby
(Max.)
1.8mW
MD51V65400E
1/15
FEDD51V65400E-03
OKI
Semiconductor
MD51V65400E
PIN CONFIGURATION (TOP VIEW)
V
CC
1
DQ1
2
DQ2
3
NC 4
NC 5
NC 6
NC 7
WE
8
RAS
9
A0
10
A1
11
A2
12
A3
13
A4
14
A5
15
V
CC
16
32-Pin Plastic
SOJ
V
SS
DQ4
DQ3
NC
NC
NC
CAS
OE
NC
A11
A10
A9
20
A8
19
A7
18
A6
17
V
SS
32
31
30
29
28
27
26
25
24
23
22
21
V
CC
1
DQ1
2
DQ2
3
NC 4
NC 5
NC 6
NC 7
WE
8
RAS
9
A0
10
A1
11
A2
12
A3
13
A4
14
A5
15
V
CC
16
V
SS
DQ4
DQ3
NC
NC
NC
CAS
OE
NC
A11
A10
A9
20
A8
19
A7
18
A6
17
V
SS
32
31
30
29
28
27
26
25
24
23
22
21
32-Pin Plastic TSOP
(K Type)
Pin Name
A0–A11
RAS
CAS
DQ1–DQ4
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (3.3V)
Ground (0V)
No Connection
Note : The same power supply voltage must be provided to every V
CC
pin, and the same GND voltage level must
be provided to every V
SS
pin.
2/15
FEDD51V65400E-03
OKI
Semiconductor
MD51V65400E
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on Any Pin Relative to V
SS
Voltage V
CC
Supply Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D*
T
opr
T
stg
Value
–0.5 to V
CC
+ 0.5
–0.5 to 4.6
50
1
0 to 70
–55 to 150
Unit
V
V
mA
W
°C
°C
*: Ta = 25°C
RECOMMENDED OPERATIING CONDITIONS
(Ta = 0 to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
3.0
0
2.0
0.3
*2
Typ.
3.3
0
Max.
3.6
0
V
CC
+ 0.3
0.8
*1
Unit
V
V
V
V
Notes: *1. The input voltage is V
CC
+ 1.0V when the pulse width is less than 20ns (the pulse width is with respect
to the point at which V
CC
is applied).
*2. The input voltage is V
SS
1.0V when the pulse width is less than 20ns (the pulse width respect to the
point at which V
SS
is applied).
PIN CAPACITANCE
(Vcc = 3.3V
±
0.3V, Ta = 25°C, f = 1 MHz)
Parameter
Input Capacitance (A0 – A11)
Input Capacitance
(RAS,
CAS, WE, OE)
Output Capacitance (DQ1 – DQ4)
Symbol
C
IN1
C
IN2
C
I/O
Min.
Max.
5
7
7
Unit
pF
pF
pF
3/15
FEDD51V65400E-03
OKI
Semiconductor
MD51V65400E
DC CHARACTERISTICS
(V
CC
= 3.3V
±
0.3V, Ta = 0 to 70°C)
MD51V65400
E-50
Min.
Output High Voltage
Output Low Voltage
Input Leakage
Current
Output Leakage
Current
Average Power
Supply Current
(Operating)
Power Supply
Current
(Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current
(Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
V
OH
V
OL
I
OH
=
−2.0mA
I
OL
= 2.0mA
0V
V
I
V
CC
+ 0.3V;
I
LI
All other pins not
under test = 0V
DQ disable
0V
V
O
V
CC
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
I
CC2
RAS, CAS
V
CC
0.2V
RAS
cycling,
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS
= V
IL
,
DQ = enable
RAS
= cycling,
CAS
before
RAS
RAS
= V
IL
,
I
CC7
CAS
cycling,
t
PC
= Min.
90
80
mA
1,3
5
5
mA
1
140
120
mA
1,2
10
10
10
10
µA
2.4
0
Max.
V
CC
0.4
MD51V65400
E-60
Min.
2.4
0
Max.
V
CC
0.4
V
V
Parameter
Symbol
Condition
Unit
Note
I
LO
10
10
10
10
µA
I
CC1
140
120
mA
1,2
1
0.5
1
mA
0.5
1
I
CC6
140
120
mA
1,2
Notes: 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS
= V
IL
.
3. The address can be changed once or less while
CAS
= V
IH
.
4/15
参数对比
与MD51V65400E-50JA相近的元器件有:MD51V65400E-60TA、MD51V65400E-50TA、MD51V65400E-60JA。描述及对比如下:
型号 MD51V65400E-50JA MD51V65400E-60TA MD51V65400E-50TA MD51V65400E-60JA
描述 Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-32 Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-32 Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-32 Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-32
零件包装代码 SOJ TSOP2 TSOP2 SOJ
包装说明 SOJ, SOJ32,.44 SOP, TSOP32,.46 SOP, TSOP32,.46 SOJ, SOJ32,.44
针数 32 32 32 32
Reach Compliance Code unknown unknown unknown unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99
访问模式 FAST PAGE FAST PAGE FAST PAGE FAST PAGE
最长访问时间 50 ns 60 ns 50 ns 60 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型 COMMON COMMON COMMON COMMON
JESD-30 代码 R-PDSO-J32 R-PDSO-G32 R-PDSO-G32 R-PDSO-J32
内存密度 67108864 bit 67108864 bit 67108864 bit 67108864 bi
内存集成电路类型 FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM
内存宽度 4 4 4 4
功能数量 1 1 1 1
端口数量 1 1 1 1
端子数量 32 32 32 32
字数 16777216 words 16777216 words 16777216 words 16777216 words
字数代码 16000000 16000000 16000000 16000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C
组织 16MX4 16MX4 16MX4 16MX4
输出特性 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOJ SOP SOP SOJ
封装等效代码 SOJ32,.44 TSOP32,.46 TSOP32,.46 SOJ32,.44
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
电源 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 4096 4096 4096 4096
自我刷新 NO NO NO NO
最大待机电流 0.0005 A 0.0005 A 0.0005 A 0.0005 A
最大压摆率 0.12 mA 0.12 mA 0.12 mA 0.12 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 J BEND GULL WING GULL WING J BEND
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL
厂商名称 LAPIS Semiconductor Co Ltd - LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd
热门器件
热门资源推荐
器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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