i
t
U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MD7003, F
MD7003A, AF
MD7003B
MQ7003
MULTIPLE SILICON ANNULAR TRANSISTORS
. . .designed for use as high-gain, low-noise differential amplifiers,
front end detectors, and temperature compensation applications.
•
•
•
Low Collector-Emitter Saturation Voltage -
VcE(sat) • °'25 Vdc (Typ) ®> Ic = 10 mAdc
DC Current Gain Specified €> 1 00 /iAdc and 1 0 mAdc
High Current-Gain-Bandwidth Product -
fr • 300 MHz (Tvp) @ Ic = 5.0 mAdc
PNP SILICON
DUAL TRANSISTORS
MD700&A*
•asp 11 i
J-o
1
DIM.
1 Ufa i .UHEltl
3
!
laaf-Urt
i
rTHAT
THST
MAX
Sl
MAXIMUM RATINGS
Collector-Emitter Voltaga
Collector-Bale VolUga
Emitter-Bate Voltage
Collector Currant
-
Continuoui
\f
VcEQ
>
1 EHITTfl
1 UM
VCB
V6B
40
50
5.0
50
One Die
AIIDia
Equal Powar
Vdc
Vdc
rvtn
M 1 CBUICtOft
] IAH
m
» <t
K
N
T~-f
;; "1
H--
J;L
IL-12S-
0.2O
»W
Vdc
mAdc
CASE BE407
>c
"D
550
350
400
314
2.0
2.28
s:
ii H,
n.s«ir
-
II
r -
r.H«c .
m no >sc
f
«.«*
00
. »
MD700W
Af
Total Powar Oinipation S> T
A
- 25°C
MD7003.A.B
MD7003F.AF
MO7003
Derate above 25
a
c
M07003.A.B
MD7003F.AF
MO7003
Total Power Oitlipation S T
c
- 25°C
MO 7003, A .8
MO70O3F.AF
MQ70O3
Dlrata above 25°C
MD70O3.A.B
MO7003F.AF
MQ7003
Operating and Storaga Junction
Temperature Range
THERMAL CHARACTERISTICS
600
400
600
3.42
2.26
3.42
J.O
1.4
2.8
mW/°C
&
:
^3
-c
Watti
cpaqft
DID Ti
•M
(41
&
"•o
14
0.7
07
8.0
40
4.0
S.
IK ETtM
(.1
0
i !
i
.
7U
1
!
MIN
0.240
Q.I IS
0,030
MAX
0.290
A
1
11.4
COLLICTf}*
c
D
H
into
o.:
r~T53
o.:
S 4.41'
an u
3.019
"t.H
O.li
l.l&o
a.o
16
cai.uct4R
. F. HJ 1
a
r,
esc
o.ooi
s»s
ur
1.17
OHO BSC
-
| 0.03J
Tj.T,,
9
-65 to »200
°C
CASE 6iOt-Q3
N
1 BSC
5
-
1 ^M
r
>•
-i
MQ7003
All On
Character into
Thermal Retiftance, Junction to Awv&ien
1
MO7003,A,B
MD7003F.AF
MQ7003
Tharmal Railitanca. Junction to Case
MD70O3.A.B
MO7003F.AF
MQ7003
Symbol
R0JA*1*
One Die
319
500
438
Eogial Powar
Unit
292
438
292
87.5
125
626
Junction to
°
C/W
TTt_.JlL.-^[-
RDJC
°c/w
125
250
250
Junction to
Ambient
MM ruH
'
5**^
1 CUM
MAK
8«
1.05
„ S
A
f
MOT CD MCUD
INCHES
1 JL MAI
I SB"
U2S.
i, n
Can
40
0
0
0
Coupling Factor
MD7003.A.B
MO7003F.AF
MQ70O3 IQ1-Q2)
iai-Q3or Q1-O4)
83
75
57
56
,
ass s;
II tWTT
U IAB
~H:
B
"TTTs"
7IC
_ iH
"fear
M
0.
ft
«
1
0.
; «L
5i_
j IT
-
iJJi.
f-k- JL
B__^_
- -
irST
CASt 607 W
tL _-—
-f
*
OJI
i 1 7,1
1 il
P3M
LJS.
n l 1
11'
H
SJA '* maasiired with th» davica loidared into a typical printed circuit board.
NJ^^Semi-Conductors reserves the nght to change test conditions, parameter limits and package dimensions without
notice. lnrormat,on turmshecI b> NJ Sem.-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
\\s encourages customers to verity that datasheets nre current before placing orders.
Ounlih/
MD7003,A,AF,B,F. MQ7003
(continued)
THERMAL COUPLING AND EFFECTIVE THERMAL RESISTANCE
In multiple chip devices, coupling of htit between die occurs.
Assuming equal thermal resilience for each die, equation 11}
The junction temper iturs can bt calculated n fellovn:
simplifies to
R«3*«3
P
03
R
s 1
(P
D
,
For the conditions where PDI •
P
02 "
P
O3 "
P
D4>
P
DT " ^O
equation 13) can be further simplified and by substituting into
equation (2) results in
< 4 I R
9
( E F F ) - R « 1 (1 *K«2+K|l3
+ R»4 K«4
P
D4
Where ATj 1 is the change in junction tempereture of die 1
R»1 thru 4 is the thermal resistance of die 1 through 4
P
D
1 thru 4 is the power dissipation in die 1 through 4
K02 thru 4 is the thermal coupling between die 1 and
die 2 through 4.
An effective package thermal resistence can be defined
follows:
Where:
- is the total
package powtr
dissipation.
Volues for the coupling factors when either the case or the
ambient is used as a reference are given in the table on page 1. If
significent power is to be diuipated in two die. die at the opposite
ends of the package should be uMd so that lowest possible junction
temperatures will result.
ELECTRICAL CHARACTERISTICS
IT
A
*
2S°C unless otherwise noted.)
L
Characteristic
I Symbol
|
Min
Typ
\x
gnit
\
CHARACTERISTICS
Collector-Emitter Breakdown Voltage ID
(l
c
- lOwAdc. I
B
- 0)
Collector. Biu Breakdown Voltega
dC" lOfiAdc.lg- 0)
Emitter-Bese Breakdown Voltage
(IE- 10wAdc,l
c
- 0)
Collector Cutoff Current
(VCB - 30 Vdc, If - 0)
ON CHARACTERISTICS
DC Current Gain (1)
(l
c
- 100/iAdc. V c £ - lOVdcl
(1C- lOmAdc, VCE- lOVdcl
Collector-Emitter Saturation Voltage
(IQ- lOmAdc, Ig- LOmAdc)
Beet-Emitter Seturation Voltage
(1C* 10mAdc, Ig- LOmAdc)
DYNAMIC CHARACTERISTICS
Current-Gein— Bandwidth Product
<IC- B.OmAdc, Vcfi- 20 Vdc, f - 100MHz)
Output Capacitance
BVCEO
BV
CBO
6V
EB
0
!
CBO
40
SO
5.0
-
-
-
-
-
-
-
100
Vdc
Vdc
Vdc
-
nAdc
"FE
_
40
50
_
_
350
350
025
0.6
-
-
VcE(sat)
v
BE(iet)
0.3S
1.0
Vdc
Vdc
'T
C
0
b
Clb
NF
200
_
300
3.0
2.0
2.0
_
MHz
(VCB- 10 vdc,i
e
- o,f • 100 kHz)
Input Capacitance
1 V
8
g - 2.0 Vdc, lc - 0, f - 1 00 kHz)
Noise Figure
llC - '00 MAdc, VCE -10 Vdc, R
s
- 3.0 k Ohms,
1
• 10 Hi to 15.7 kHz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio (2)
MD7003A.AF
IIC-IOOpAdc, V
C E
- 10 Vdc) M07003B
Base-Emitter Voltage Differential
MD7CW3A.AF
(1C- 100 nAdc, VCE* lOVdcl MD7003B
(1) Pulse Test: Pulse Width < 300 us. Duty Cycle < 2.0%.
(2) The lowest HPE reeding is tekan "hpEl
for
this ratio.
e.o
8.0
PF
pF
dB
-
_
_
I
>FE1"
1
FE2
0.76
0.85
-
_
~
1.0
1.0
25
16
-
mV
VBEI-VBEZ!
