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MDA200G_05

1 A, SILICON, BRIDGE RECTIFIER DIODE

器件类别：半导体    分立半导体   

厂商名称：Rectron Semiconductor

厂商官网：http://www.rectron.com/

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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
MDA200G
THRU
MDA210G
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes
FEATURES
*
*
*
*
*
Low cost
Low leakage
Low forward voltage
Mounting position: Any
Weight: 1.26 grams
RS-1
.414 (10.5)
.374 (9.5)
.360 (9.1)
.320 (8.1)
MECHANICAL DATA
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
AC
.035 (0.9) DIA
.028 (0.7) TYP.
.390
MIN.
(9.9)
.160 (4.1)
SPACING
.140 (3.6)
.650 (16.5)
.610 (15.5)
.161 (4.1)
.150 (3.8)
.050
(1.27)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at T
A
= 50 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance from junction to case
Typical Thermal Resistance from junction to ambient
Operating Temperature Range
Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 3.14A DC
Maximum Reverse Current at Rated
DC Blocking Voltage per element
@T
A
= 25
o
C
@T
A
= 100
o
C
SYMBOL
V
F
MDA200G MDA201G MDA202G MDA204G MDA206G MDA208G MDA210G UNITS
1.1
5.0
I
R
1
mAmps
2005-3
REV: A
Volts
uAmps
R
θ
JC
R
θ
JA
T
J
T
STG
13
0
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
MDA200G MDA201G MDA202G MDA204G MDA206G MDA208G MDA210G UNITS
50
35
50
100
70
100
200
140
200
400
280
400
2.0
50
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
C/W
0
0
40
-55 to + 150
-55 to + 150
C
C
Note: ”Fully ROHS compliant”,”100% Sn plating(Pb-free).
RATING AND CHARACTERISTIC CURVES ( MDA200G THRU MDA210G )
FIG. 1 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
FIG. 2 - TYPICAL FORWARD CURRENT
DERATING CURVE
2.0
AVERAGE FORWARD CURRENT, (A)
60
50
8.3ms Single Half Sine-Wave
(JEDED Method)
1.5
40
30
1.0
20
.5
60 Hz RESISTIVE OR
INDUCTIVE LOAD
10
0
0
2
4
6 10
20 40 60
NUMBER OF CYCLES AT 60Hz
100
0
30
50
70
90
110
130
150
AMBIENT TEMPERATURE, ( )
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS REVERSE CURRENT, (uA)
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
10
20
10
1.0
1.0
.1
TJ = 25
Pulse Width = 300us
1% Duty Cycle
0.1
TJ = 25
.01
.7
.01
.8
.9
1.0
1.2
1.4
0
20
40
60
80 100 120
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
140
INSTANTANEOUS FORWARD VOLTAGE, (V)
RECTRON
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参数对比
与MDA200G_05相近的元器件有：MDA210G、RS101_05、RS103、MDA208G、MDA206G、MDA202G。描述及对比如下：
型号 MDA200G_05 MDA210G RS101_05 RS103 MDA208G MDA206G MDA202G
描述 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE
是否Rohs认证 - 符合 - 符合 符合 符合 符合
厂商名称 - Rectron Semiconductor - Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor
包装说明 - ROHS COMPLIANT, PLASTIC, RS-1, 4 PIN - ROHS COMPLIANT, PLASTIC, RS-1, 4 PIN ROHS COMPLIANT, PLASTIC, RS-1, 4 PIN ROHS COMPLIANT, PLASTIC, RS-1, 4 PIN ROHS COMPLIANT, PLASTIC, RS-1, 4 PIN
针数 - 4 - 4 4 4 4
Reach Compliance Code - _compli - _compli _compli _compli _compli
其他特性 - UL RECOGNIZED - UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
最小击穿电压 - 1000 V - 200 V 800 V 600 V 200 V
配置 - BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 - SILICON - SILICON SILICON SILICON SILICON
二极管类型 - BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
最大正向电压 (VF) - 1.1 V - 1 V 1.1 V 1.1 V 1.1 V
JESD-30 代码 - R-PSIP-W4 - R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4
JESD-609代码 - e3 - e3 e3 e3 e3
湿度敏感等级 - 1 - 1 1 1 1
最大非重复峰值正向电流 - 50 A - 30 A 50 A 50 A 50 A
元件数量 - 4 - 4 4 4 4
相数 - 1 - 1 1 1 1
端子数量 - 4 - 4 4 4 4
最高工作温度 - 150 °C - 150 °C 150 °C 150 °C 150 °C
最低工作温度 - -55 °C - -55 °C -55 °C -55 °C -55 °C
最大输出电流 - 2 A - 1 A 2 A 2 A 2 A
封装主体材料 - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 - IN-LINE - IN-LINE IN-LINE IN-LINE IN-LINE
峰值回流温度（摄氏度） - 265 - 265 265 265 265
认证状态 - Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 - 1000 V - 200 V 800 V 600 V 200 V
最大反向电流 - 0.00001 µA - 0.00001 µA 0.00001 µA 0.00001 µA 0.00001 µA
表面贴装 - NO - NO NO NO NO
端子面层 - MATTE TIN - MATTE TIN MATTE TIN MATTE TIN MATTE TIN
端子形式 - WIRE - WIRE WIRE WIRE WIRE
端子位置 - SINGLE - SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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