IXYS
Absolute Maximum Ratings
V
RRM
V
DRM
[V]
MCC
2000
2200
500-20io1
500-22io1
Date: 19.09.2005
Data Sheet Issue:
3
Thyristor/Diode Modules M## 500
MCD
500-20io1
500-22io1
MDC
500-20io1
500-22io1
MCA
500-20io1
500-22io1
MCK
500-20io1
500-22io1
MCDA
500-20io1
500-22io1
MDCA
500-20io1
500-22io1
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage
Repetitive peak reverse voltage
1)
1)
MAXIMUM
LIMITS
2000-2200
2000-2200
2000-2200
1)
UNITS
V
V
V
V
Non-repetitive peak off-state voltage
1)
Non-repetitive peak reverse voltage
2100-2300
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)M
I
T(d.c.)
I
TSM
I
TSM2
It
It
(di/dt)
cr
V
RGM
P
G(AV)
P
GM
V
ISOL
T
vj op
T
stg
Notes:
1)
2)
3)
4)
5)
De-rating factor of 0.13% per °C is applicable for T
vj
below 25°C.
Single phase; 50 Hz, 180° half-sinewave.
Half-sinewave, 125°C T
vj
initial.
V
D
= 67% V
DRM
, I
FG
= 2 A, t
r
≤
0.5µs, T
C
= 125°C.
AC RMS voltage, 50 Hz, 1min test
2
2
MAXIMUM
LIMITS
2)
2)
2)
UNITS
A
A
A
A
A
kA
kA
Maximum average on-state current, T
C
= 80°C
Maximum average on-state current. T
C
= 85°C
Nominal RMS on-state current, T
C
= 55°C
D.C. on-state current, T
C
= 55°C
2)
500
460
323
1071
879
3)
Maximum average on-state current. T
C
= 100°C
Peak non-repetitive surge t
p
= 10 ms, V
RM
= 60%V
RRM
Peak non-repetitive surge t
p
= 10 ms, V
RM
≤
10V
2
2
3)
3)
14.0
15.4
0.98×10
1.19×10
150
6
6
I t capacity for fusing t
p
= 10 ms, V
RM
= 60%V
RRM
I t capacity for fusing t
p
= 10 ms, V
RM
≤
10 V
3)
As
As
A/µs
A/µs
V
W
W
V
°C
°C
2
2
Critical rate of rise of on-state current (repetitive)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Isolation Voltage
5)
4)
4)
Critical rate of rise of on-state current (non-repetitive)
300
5
4
30
3500
-40 to +125
-40 to +150
Operating temperature range
Storage temperature range
Rating Report. Types M##500-20io1 and M##500-22io1 Issue 3
Page 1 of 11
September, 2005
IXYS
Thyristor Characteristics
PARAMETER
V
TM
V
TM
V
T0
r
T
(dv/dt)
cr
I
DRM
I
RRM
V
GT
I
GT
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
t
q
Maximum peak on-state voltage
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
Turn-off time
-
R
thJC
R
thCH
F
1
F
2
W
t
Thermal resistance, junction to case
-
-
-
-
4.25
10.2
-
300
-
-
-
-
-
-
1.5
Thyristor/Diode Module Types M##500-20io1 and M##500-22io1
MIN.
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
0.6
1.2
3000
1800
140
26
200
MAX. TEST CONDITIONS
1)
1.65
1.57
0.88
0.46
-
70
70
3.0
300
1000
1.5
2.5
-
2400
-
-
-
-
I
TM
= 1000 A, t
p
= 1 ms, di/dt = 10 A/µs,
V
R
= 50 V, V
DR
= 80%V
DRM
, dv
DR
/dt = 20 V/µs
I
TM
= 1000 A, t
p
= 1 ms, di/dt = 10 A/µs,
V
R
= 50 V, V
DR
= 80%V
DRM
, dv
DR
/dt = 200 V/µs
I
TM
= 1000 A, t
p
= 1 ms, di/dt = 10A/µs,
V
R
= 50 V
V
D
= 80% V
DRM
, linear ramp, Gate o/c
Rated V
DRM
Rated V
RRM
T
vj
= 25°C, V
D
= 10 V, I
T
= 3 A
T
vj
= 25°C
I
FG
= 2 A, t
r
= 0.5 µs, V
D
= 67%V
DRM
,
I
TM
= 2000 A, di/dt = 10 A/µs, T
vj
= 25°C
I
TM
= 1700 A
I
TM
= 1500 A
UNITS
V
V
V
mΩ
V/µs
mA
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
K/W
K/W
Nm
0.062 Single Thyristor
0.031 Whole Module
0.02
0.01
5.75
13.8
-
2)
Thermal resistance, case to heatsink
Mounting force (to heatsink)
Mounting force (to terminals)
Weight
Single Thyristor
Whole Module
Nm
kg
Diode Characteristics
PARAMETER
V
FM
V
T0
r
T
I
RRM
Q
rr
Q
ra
I
rm
t
rr
Maximum peak forward voltage
Threshold voltage
Slope resistance
Peak reverse current
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
Notes:
1) Unless otherwise indicated T
vj
=125°C.
2) Screws must be lubricated
MIN.
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
2200
1800
145
25
MAX. TEST CONDITIONS
1.09
0.72
0.143
50
-
2250
-
-
Rated V
RRM
I
TM
= 1700 A
1)
UNITS
V
V
mΩ
mA
µC
I
TM
= 1000 A, t
p
= 1ms, di/dt = 10 A/µs,
V
R
= 50 V
µC
A
µs
Rating Report. Types M##500-20io1 and M##500-22io1 Issue 3
Page 2 of 11
September, 2005
IXYS
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
20
22
V
DRM
V
DSM
V
RRM
V
2000
2200
Thyristor/Diode Module Types M##500-20io1 and M##500-22io1
V
RSM
V
2100
2300
V
D
V
R
DC V
1250
1350
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
vj
below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of I
GM
should be between five and ten times I
GT
, which is shown on page 2. Its duration
(t
p1
) should be 20µs or sufficient to allow the anode current to reach ten times I
L
, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
G
should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times I
GT
.
Rating Report. Types M##500-20io1 and M##500-22io1 Issue 3
Page 3 of 11
September, 2005
IXYS
8.0 Computer Modelling Parameters
8.1 Thyristor Dissipation Calculations
Thyristor/Diode Module Types M##500-20io1 and M##500-22io1
I
AV
=
−
V
T
0
+
V
T
0
+
4
⋅
ff
⋅
r
T
⋅
W
AV
2
⋅
ff
2
⋅
r
T
2
2
W
AV
=
and:
∆
T
R
th
∆
T
=
T
j
max
−
T
K
Where V
T0
= 0.88 V, r
T
= 0.46 mΩ,
R
th
= Supplementary thermal impedance, see table below and
ff
= Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave
Sine wave
30°
0.07067
0.06767
60°
0.06791
0.06536
90°
0.06629
0.06408
120°
0.06525
0.0633
180°
0.06395
0.062
270°
0.06277
d.c.
0.062
Form Factors
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
60°
2.449
2.778
90°
2
2.22
120°
1.732
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
8.2 Calculating V
T
/V
F
using ABCD Coefficients
The on-state/forward characteristics, I
T
vs. V
T
, on pages 6 & 9 are represented in two ways;
(i) the well established V
T0
and r
T
tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
T
in terms of
I
T
given below:
V
T
=
A
+
B
⋅
ln
(
I
T
)
+
C
⋅
I
T
+
D
⋅
I
T
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for V
T
agree with the true device characteristic over a current range, which is limited to
that plotted.
Thyristor coefficients
25°C
A
B
C
D
2.296566505
-0.3387419
-6.25982×10
-5
125°C
0.617965877
0.01056009
2.13809×10
-4
0.04767141
Diode coefficients
25°C
0.01430982
125°C
-0.214099731
0.2916851
5.15459×10
-4
-3
A
B
C
D
0.578986196
0.1048225
1.61162×10
-4
-7.480625×10
-0.04232154
Rating Report. Types M##500-20io1 and M##500-22io1 Issue 3
Page 4 of 11
September, 2005
IXYS
8.3 D.C. Thermal Impedance Calculation
Thyristor/Diode Module Types M##500-20io1 and M##500-22io1
Where
p = 1
to
n
n
t
r
t
r
p
τ
p
=
=
=
=
=
−
t
τ
r
t
=
∑
r
p
⋅
1
−
e
p
p
=
1
p
=
n
number of terms in the series
Duration of heating pulse in seconds.
Thermal resistance at time t.
Amplitude of p
th
term.
Time Constant of r
th
term.
The coefficients for this device are shown in the tables below:
D.C.
Term
1
0.05428
2.69428
2
4.4894×10
0.126017
-3
3
2.3382×10
0.013878
-3
4
0.8759×10
1.435×10
-3
-3
r
p
τ
p
9.0 Reverse recovery ratings
(i) Q
ra
is based on 50% I
rm
chord as shown in Fig. 1
Fig. 1
(ii) Q
rr
is based on a 150 µs integration time i.e.
150
µ
s
Q
rr
=
(iii)
∫
i
0
rr
.
dt
t
1
K Factor
=
t
2
Rating Report. Types M##500-20io1 and M##500-22io1 Issue 3
Page 5 of 11
September, 2005
