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MF70-1400

90 A, 1400 V, SILICON, RECTIFIER DIODE, DO-5

器件类别:分立半导体    二极管   

厂商名称:Dynex

厂商官网:http://www.dynexsemi.com/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Dynex
零件包装代码
DO-5
包装说明
O-MUPM-D1
针数
1
Reach Compliance Code
unknow
ECCN代码
EAR99
应用
HIGH VOLTAGE FAST RECOVERY
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-5
JESD-30 代码
O-MUPM-D1
最大非重复峰值正向电流
700 A
元件数量
1
相数
1
端子数量
1
最大输出电流
70 A
封装主体材料
METAL
封装形状
ROUND
封装形式
POST/STUD MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
1400 V
最大反向恢复时间
0.915 µs
表面贴装
NO
端子形式
SOLDER LUG
端子位置
UPPER
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
MF70
MF70
Fast Recovery Diode
Advance Information
Replaces March 1998 version, DS4195-2.1
DS1955-3.0 January 2000
APPLICATIONS
s
Inverse Parallel Or Series Connected Diode
s
Power Supplies
s
High Frequency Applications
KEY PARAMETERS
V
RRM
1600V
I
F(AV)
70A
I
FSM
700A
Q
r
26
µ
C
t
rr
915ns
FEATURES
s
Glass Passivation
s
Fast Recovery Characteristics
s
High Voltage Capabilities
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
1600
1400
1200
Conditions
MF70-1600
MF70-1400
MF70-1200
V
RSM
= V
RRM
+ 100V
Lower voltage grades available.
For stud anode add suffix 'R' to type number.
Outline type code: DO5.
See Package Details for further information.
CURRENT RATINGS
Symbol
I
F(AV)
I
F(RMS)
I
F
Parameter
Mean forward current
RMS value
Continuous (direct) forward current
Conditions
Half wave resistive load, T
case
= 75
o
C
T
case
= 75
o
C
T
case
= 75
o
C
Max.
70
110
90
Units
A
A
A
1/8
MF70
SURGE RATINGS
Symbol
I
FSM
I
2
t
Parameter
Surge (non-repetitive) forward current
I
2
t for fusing
Conditions
10ms half sine; with 100% V
RRM,
T
j
= 125
o
C
10ms half sine; T
j
= 125
o
C
Max.
700
2450
Units
A
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
dc
Mounting torque 3.5Nm
with mounting compound
Forward (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Mounting torque
Use torque wrench
-
-55
3.2
125
125
3.8
o
Conditions
Min.
-
-
-
Max.
0.37
0.2
125
Units
o
C/W
o
C/W
o
C
C
˚C
Nm
CHARACTERISTICS
Symbol
V
FM
I
RM
t
rr
Q
r
t
rr
V
TO
r
T
V
FRM
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge
Reverse recovery time
Threshold voltage
Slope resistance
Forward recovery voltage
Parameter
Conditions
At 210A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 100
o
C
I
F
= 1A, di
RR
/dt = 25A/µs
T
case
= 25
o
C, V
R
= 100V
I
F
= 100A, di
RR
/dt = 100A/µs
T
case
= 25
o
C, V
R
= 100V
At T
vj
= 125
o
C
At T
vj
= 125
o
C
di/dt = 1000A/µs, T
j
= 125
o
C
Typ.
-
-
-
-
-
-
-
80
Max.
2.0
10
300
26
915
1.3
3.34
-
Units
V
mA
ns
µC
ns
V
mΩ
V
2/8
MF70
CURVES
500
Measured under pulse
conditions
80
400
Instantaneous forward current - (A)
T
case
= 25˚C
Transient forward voltage - (V)
60
95%
300
40
5%
200
20
100
T
j
= 125˚C
T
j
= 25˚C
0
0
0
200 400 600 800 1000 1200
Rate of rise of forward current - (A/µs)
0
1.0
2.0
3.0
Instantaneous forward voltage - (V)
Fig.2 Forward recovery voltage vs rate of rise of
forward voltage
Fig.1 Maximum (limit) forward characteristics
0.5
Thermal impedance - ˚C/W
0.4
d.c.
0.3
0.2
0.1
0
0.001
0.01
0.1
Time - (s)
1.0
10
Fig.3 Maximum transient thermal impedance - junction to case
3/8
MF70
1.05
1.0
Recovery time - (µs)
T
case
= 125˚C
0.9
0.8
0.7
0.6
0.55
I
F
= 100A
95%
I
F
= 50A
I
F
= 100A
5%
I
F
= 50A
1
10
100
Rate of rise of reverse current - (A/µs)
Fig.4 Recovery time vs dI
R
/dt
1000
40
I
F
= 100A
T
= 125˚C
36
case
95%
32
I
F
= 50A
28
I
F
= 100A
24
5%
20
I
F
= 50A
16
12
8
4
0
1
10
100
Rate of change of reverse current - (A/µs)
Fig.5 Recovered charge vs dI
R
/dt
Recovered charge - (µC)
1000
5000
T
case
= 55˚
Peak current - (A)
1000
50
10 00
00
0
25
0
0
10
00 500 300
10 50H
0
z
100
10
100
1000
Pulse width - (µs)
Fig.6 Frequency curves - square waveform
10000
4/8
MF70
500
T
case
= 85˚
Peak current - (A)
100
10
00
0
50
00
25
00
10
00
50
0
30
0
50
10 Hz
0
10
10
100
1000
Pulse width - (µs)
Fig.7 Frequency curves - square waveform
10000
500
Peak current - (A)
100
2.0J
1.0
0.5
0.2
0.1
10
10
100
1000
Pulse width - (µs)
Fig.8 Energy per pulse - square waveform
10000
5000
T
case
= 55˚
Peak current - (A)
1000
10
00
50
0
00
25
00
10
3
00 500 00
10
0
50
H
z
100
10
100
1000
Pulse width - (µs)
Fig.9 Frequency curves - sine waveform
10000
5/8
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参数对比
与MF70-1400相近的元器件有:MF70-1600、MF70。描述及对比如下:
型号 MF70-1400 MF70-1600 MF70
描述 90 A, 1400 V, SILICON, RECTIFIER DIODE, DO-5 90 A, 1600 V, SILICON, RECTIFIER DIODE, DO-5 90 A, 1600 V, SILICON, RECTIFIER DIODE, DO-5
是否无铅 不含铅 不含铅 -
是否Rohs认证 符合 符合 -
厂商名称 Dynex Dynex -
零件包装代码 DO-5 DO-5 -
包装说明 O-MUPM-D1 O-MUPM-D1 -
针数 1 1 -
Reach Compliance Code unknow unknow -
ECCN代码 EAR99 EAR99 -
应用 HIGH VOLTAGE FAST RECOVERY HIGH VOLTAGE FAST RECOVERY -
外壳连接 CATHODE CATHODE -
配置 SINGLE SINGLE -
二极管元件材料 SILICON SILICON -
二极管类型 RECTIFIER DIODE RECTIFIER DIODE -
JEDEC-95代码 DO-5 DO-5 -
JESD-30 代码 O-MUPM-D1 O-MUPM-D1 -
最大非重复峰值正向电流 700 A 700 A -
元件数量 1 1 -
相数 1 1 -
端子数量 1 1 -
最大输出电流 70 A 70 A -
封装主体材料 METAL METAL -
封装形状 ROUND ROUND -
封装形式 POST/STUD MOUNT POST/STUD MOUNT -
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED -
认证状态 Not Qualified Not Qualified -
最大重复峰值反向电压 1400 V 1600 V -
最大反向恢复时间 0.915 µs 0.915 µs -
表面贴装 NO NO -
端子形式 SOLDER LUG SOLDER LUG -
端子位置 UPPER UPPER -
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED -
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