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512K x 8 FLASH

MFM8516 - 55/70/90/12

Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear

NE29 8SE, England Tel. +44 (0191) 2930500 Fax. +44 (0191) 2590997

Issue 5.0 : April 2001

Description

The MFM8516 is a 4M Bit CMOS 5V only Flash

monolithic device organised : 512K x 8. The device

offers fast access times of 55/70/90 and 120ns and

5V program/erase.

The device has a 64 KByte sector size. The Program

and Erase procedure is simplified via automatic

program and erase algorithms.

The MFM8516 has a 10K cycle write erase cycle

endurance (100K cycle E-Part) and a 10 year data

retention time.

524,288 bit FLASH EEPROM

Features

•

4 Megabit FLASH memory.

•

Fast Access Times of 55/70/90/120 ns.

•

Operating Power 248 mW (max),

Low Power Standby (CMOS) 633µW (max).

•

Automatic Write/Erase by Embedded Algorithm - end of

Write/Erase indicated by DATA Polling and Toggle Bit.

•

Flexible Sector Erase Architecture - 64K byte sector

size, with hardware protection of any number of sectors.

•

Byte Program of 16µs (Typ), Sector Program of 2s (Typ)

•

Erase/Write Cycle Endurance, Standard 10,000 (min)

Extended 100,000 (min)

• 10 year data retention.

•

May be screened in accordance with MIL-STD-883.

Block Diagram

DQ0-DQ7

Vcc

Vss

Erase Voltage

Generator

Input/Output

Buffers

Pin Definitions

A18

A16

A15

A12

GND

A17

A14

A13

A11

A10

State

Control

Command

PGM Voltage

Generator

S,V

PACKAGE

TOP VIEW

Chip Enable

Output Enable

Logic

Data

Latch

STB

Vcc Detector

Timer

Y-Decoder

Y-Gating

X-Decoder

Cell Matrix

A14

A13

A11

A10

A0-A18

Package Details

Pin Count

Description

Package Type

Pin Functions

A0-A18

D0-D7

Vcc

GND

Address Inputs

Data Inputs/Outputs

Chip Enable

Write Enable

Output Enable

Power (+5V)

Ground

Dual In-line

JLCC (J Leaded Chip Carrier)

GND

A12

A15

A16

A18

Vcc

A17

MFM8516 - 55/70/90/12

Issue 5.0 : April 2001

DC OPERATING CONDITIONS

Absolute Maximum Ratings

(1)

unit

Voltage on any pin w.r.t. Gnd

Supply Voltage

(2)

Voltage on A9 w.r.t. Gnd

(3)

Storage Temperature

Notes : (1)

-2.0 to +7

-2.0 to +14

-65 to +150

°C

(2)

(3)

Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional

operation of the device at those or any other conditions above those indicated in the operational sections of this

specification is not implied.

Minimum DC voltage on any input or I/O pin is -0.5V. Maximum DC voltage on output and I/O pins is Vcc+0.5V

During transitions voltage may overshoot by +/-1V for up to 10ns

Minimum DC input voltage on A9 is -0.5V during voltage transitions, A9 may overshoot Vss to -1V for periods of up to

10ns, maximum DC input voltage in A9 is 13.5V which may overshoot to 14.0V for periods up to 10ns

Recommended Operating Conditions

Parameter

Supply Voltage

Input High Voltage (TTL)

Input Low Voltage (TTL)

Input High Voltage (CMOS)

Input Low Voltage (CMOS)

Operating Temperature

min

4.5

2.0

-0.5

0.7V

-0.5

-40

-55

typ

5.0

max

5.5

+0.5

0.8

+0.3

0.8

125

unit

°C

C (-I suffix)

C (-M\MB suffix)

DC Electrical Characteristic

=-55°C to

125°C,V

=5V

10%)

Parameter

I/P Leakage Current

Address, OE

Other Pins

Output Leakage Current

Operating Current

Program/Erase Current

Standby Supply Current

TTL

CMOS

Autoselect / Sector Protect Voltage

Output Low Voltage

Output High Voltage

Low V

Lock-Out Voltage

A9 Input Leakage Current

Symbol Test Condition

LI1

LI2

LI3

CCO

CCP

SB1

OH1

LKO

= V

max, V

= 0V or V

= V

max, A9 = 12.5V

= V

max, V

= 0V or V

= V

max, V

OUT

= 0V or V

CS = V

, OS = V

, I

OUT

= 0mA,

= 6MHz

Programming in Progress

= V

max, CS = V

OE = V

= V

max, CS =

+0.5,

OE = V

= 5.0V

= 5.8mA. V

= V

min.

= -2.5mA. V

= V

min.

min

11.5

2.4

3.2

typ max

±1

1.5

115

12.5

0.45

4.2

Unit

µA

MFM8516 - 55/70/90/12

Issue 5.0 : April 2001

Capacitance

=25°C,f=1MHz)

Parameter

Input Capacitance

Control Pin Capacitance

Output Capacitance

Symbol

IN1

IN2

OUT

Test Condition

= 0V

OUT

= 0V

typ

max

Unit

Note: These parameters are calculated, not measured.

AC Test Conditions

* Input pulse levels : 0.0V to 3.0V

* Input rise and fall times : 5 ns

* Input and output timing reference levels : 1.5V

* V

= 5V + 10%

I/O Pin

166

Ω

1.76V

30pF

32121098765432109876543210987654321

Output hold time from address

Output enable to output High Z

Output enable to output

Chip enable to output

CS or OE whichever occurs first

Address to output delay

Parameter

Read Cycle Time

Parameter

Output hold time from address

Output enable to output High Z

Output enable to output

Chip enable to output

CS or OE whichever occurs first

Read Cycle Time

MFM8516 - 55/70/90/12

AC OPERATING CONDITIONS

Read Cycle

Consult Factory

Symbol

ACC

min

typ

43210987654321

typ

max

min

120

typ

120

typ

max

Issue 5.0 : April 2001

max

120

Unit

21098765432109876543210987654321

MFM8516 - 55/70/90/12

Parameter

Notes: (1) This does not include the preprogramming time.

(2) Not 100% tested.

Byte Programming operation

Chip Erase operation

(1)

Chip Erase operation

(1)

Sector Erase operation

(1)

Sector Erase operation

(1)

Parameter

Output Enable Setup Time

Address Setup time

Address Hold time

CS hold time

Data Setup Time

CS setup time

Data hold Time

Vcc setup time

(2)

Vcc setup time

(2)

Read Recover before Write

Write Cycle time

(2)

Write Cycle time

(2)

WE Pulse Width High

WE Pulse Width

Write/Erase/Program

Consult Factory

Symbol

WHWH1

WHWH3

WHWH2

WHWH3

WHWH2

GHWL

WPH

OES

VCS

min

543210987654321

typ

max

120

min

120

typ

Issue 5.0 : April 2001

max

120

unit

sec

µs