MGA-412P8
GaAs Enhancement-mode pHEMT Power Amplifier
optimized for IEEE 802.11b/g applications
Data Sheet
Description
Avago Technologies’s MGA-412P8 linear power am-
plifier is designed for applications in the (1.7-3) GHz
frequency range. The amplifier is optimized for IEEE
802.11b/g WLAN applications and has a best-in-class
efficiency (PAE) of 25.5% (54Mbps OFDM) achieved
through the use of Avago Technologies’ proprietary
GaAs Enhancement-mode pHEMT process.
The MGA-412P8 is housed in a miniature 2.0 x 2.0 x
0.75mm
3
8-lead leadless-plastic-chip-carrier (LPCC)
package. The compact footprint, low profile and excellent
thermal efficiency of the LPCC package makes the MGA-
412P8 an ideal choice as a power amplifier for mobile IEEE
802.11b/g WLAN applications.
It achieves +19.0 dBm linear output power that meets 3%
EVM at 54Mbps data rate (OFDM Modulation), and 23dBm
at 11Mbps (CCCK modulation).
Features
•
Advanced GaAs E-pHEMT
•
Integrated power detector & power down functions
•
High efficiency
•
Single +3.3V Supply
•
Small Footprint: 2x2mm
2
•
Low Profile: 0.8mm max.
Specifications
•
At 2.452 GHz; 3.3V (Typ.) :
•
Gain: 25.5 dB
•
P1dB: 25.3 dBm
•
Pout linear with IEEE 802.11g OFDM modulation
@54Mbps data rate: 19.0 dBm @ 3% EVM.
•
Current @19dBm linear Pout: (54Mbps) : 95mA
•
Reverse Isolation (typ): > 40dB
•
Quiescent current (typ): 40mA
•
Meets IEEE 802.11b @11Mbps (CCCK modulation)
with Pout: 23dBm while consuming 200mA.
Component Image
2.0 x 2.0 x 0.75 mm
8-lead LPCC
Pin 8
Pin 7
Pin 6
Pin 5
Bottom View
1:Gnd
2:RFin
2:Gnd
4:Vdd1
Top View
Note:
Package marking provides Orientation and Identification
"1C" = Product Code
"X" = Date code indicates month of manufacture
8:Det
Pin 1
Pin 2
Pin 3
Pin 4
Applications
•
Power Amplifier for IEEE 802.11b/g WLAN applica-
tions
•
Bluetooth Power Amplifier
•
2.4GHz ISM band applications
1CX
7:RFout
6:Vdd2
5:Pwr Down
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 200 V
Refer to Avago Technologies Application
Note A004R:
Electrostatic Discharge,
Damage and Control.
Absolute Maximum Rating
[1]
Tc=25°C
Symbol
V
dd
P
in
P
diss
T
j
T
STG
Parameter
Device Voltage, RF output to ground
CW RF Input Power (Vdd = 3.3V)
Total Power Dissipation
[2]
Junction Temperature
Storage Temperature
Units
V
dBm
W
o
C
o
C
Absolute Max.
5
10
0.8
150
-65 to 150
Thermal Resistance
[3]
(Vdd = 3.3V),
θjc
= 33.3 °C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Board (package belly) temperature, Tb is 25 °C.
Derate 30mW/ °C for Tb>123.36 °C.
3. Thermal resistance measured using 150 °C
Liquid Crystal Measurement Technique.
Product Consistency Distribution Charts
[4,5]
USL
LSL
30
35
40
45
50
55
24 24.2
24.6
25 25.2
25.6
26
Figure 1. Id@ 2.452GHz; Nominal = 40mA, USL: 55mA
Figure 2. P1dB @ 2.452GHz; Nominal = 25.3dBm, LSL: 24dBm
LSL
23
24
25
26
27
28
Notes:
4. Distribution data sample size is 500 samples taken from 3 different
wafers and 3 different lots. Future wafers allocated to this product
may have nominal values anywhere between the upper and lower
limits.
5. Measurements are made on production test board, which represents
a trade-off between optimal Gain and P1dB. Circuit losses have been
de-embedded from actual measurements.
Figure 3. Gain@ 2.452GHz; Nominal = 25.5dB, LSL: 23 dB
2
Electrical Specifications
[6]
Tc = 25 °C, 2.452 GHz [typical, measured on demo board].DC bias for RF parameters Vdd =Vsd=3.3V
Unless otherwise specified, all data are taken with OFDM 64-QAM modulated signal per IEEE802.11g specifications
at 54Mbps data rate.
Symbol
Idq
Isd
I_leak
G
Psat
P1dB
Parameter
Quiescent current
Current drawn by Shutdown pin
Total current consumption at shutdown(Vsd=0V)
Gain
Saturated Power
1 dB Compression Point
Gain Flatness (2.4 - 2.5GHz)
Units
mA
mA
uA
dB
dBm
dBm
dB
dBm
mA
dBm
mA
dB
dB
dB
dBm
MIN
TYP
40
0.5
5
MAX
55
23
25.5
27
24
25.3
1
23
200
19
95
-5.5
-11.5
>40
38
Poutn
Idn
Poutl
Idl
S11
S22
S12
OIP3
Max Pout per IEEE 802.11b mask (CCCK modulation)
Current @ 23dBm 802.11b BPSK
Linear Power @ 3% EVM, 54Mbps OFDM
Current @ 3% EVM
Input Return Loss
Output Return Loss
Isolation
Large Signal, Output IP3 (2-tone at ± 10MHz from carrier freq)
Notes:
6. Measurements taken on demo board as shown on Figure 4. Excess circuit losses have been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have
nominal values any where within the upper and lower spec limits.
3
Demo board Diagram
DET
5.6nH
5.6nH
0ohm
1.2pF
6.8pF
6.8pF
INPUT
0.4mm
0.56mm
1.5pF
5.6nH
C
0ohm
1000pF
OUTPUT
2.2uF
22ohm
0.1uF
1000pF
OCT 2005
Rev 1.1
SD
18nH
Vdd
Figure 4. Demo board and Application Circuit Components
4
Schematic Diagram
Detector output
L
L5
L=5.6 nH
R=
L
L6
L=5.6 nH
R=
C
C3
C=1.2 pF
RF Input
1
2
8
7
6
5
RF output
P ort
P2
P ort
P1
C
C1
C=6.8 pF
3
4
TLIN
*
TL1
C
C
C2
C4
C=1.5 pF C=6.8 pF
L
L3
L=5.6 nH
C
C7
C=2.2 uF
C
C8
C=1000 pF
C
C5
C=1000 pF
R
R1
R=22 Ohm
L
L4
L=18 nH
C
C6
C=0.1 uF
Vshutdown = +3.3V ON
Vshutdown =0V OFF
Figure 5. Demo Board Schematic Diagram
Vdd = +3.3V nom
* 0.56mm wide on 10mil thick Rogers RO4350 board
- Components L6, C2 and C3 should be located as close to the packaged device pins as possible.
- Components R1 and L4 are used to isolate the test board from Power Supply effects.
- Recommended PCB material is Roger, RO4350.
- Suggested component values may vary according to layout and PCB material.
5
