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MGBR12L45

MOS GATED BARRIER RECTIFIER

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

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UNISONIC TECHNOLOGIES CO.,LTD
MGBR12L45
MOS GATED BARRIER
RECTIFIER
DESCRIPTION
DIODE
The UTC
MGBR12L45
is a surface mount mos gated barrier
rectifier, it uses UTC’s advanced technology to provide customers
with low forward voltage drop and high switching speed, etc.
FEATURES
* Low forward voltage drop
* High switching speed
SYMBOL
ORDERING INFORMATION
Package
TO-277
Pin Assignment
1
2
3
A
K
A
Packing
Tape Reel
Ordering Number
Lead Free
Halogen Free
MGBR12L45L-T27-R
MGBR12L45G-T27-R
Note: Pin Assignment: A: Anode K: Common Cathode
MARKING INFORMATION
PACKAGE
MARKING
TO-277
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R601-189.B
MGBR12L45
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
DIODE
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load,derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
V
RM
45
V
WorkingPeak Reverse Voltage
V
RWM
45
V
Peak Repetitive Reverse Voltage
V
RRM
45
V
Average Rectified Output Current
T
C
=140°C
I
O
12
A
Non-Repetitive Peak Forward Surge Current 8.3ms
I
FSM
180
A
Single Half Sine-Wave Superimposed on Rated Load
Operating Junction Temperature
T
J
-65~+150
°C
Storage Temperature
T
STG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS (Note 3)
PARAMETER
SYMBOL
θ
JA
θ
JC
RATINGS
73
13
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
A
=25°C,unless
otherwise specified.)
SYMBOL
V
(BR)R
MIN
45
TYP MAX UNIT
V
0.60
V
0.55
V
50
300
μA
17
75
mA
TEST CONDITIONS
I
R
=0.5mA
I
F
=12A, T
J
=25°C
Forward Voltage Drop
V
FM
I
F
=12A, T
J
=125°C
V
R
=45V, T
J
=25°C
Leakage Current (Note 1)
I
RM
V
R
=45V, T
J
=125°C
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
3. Mounted on an FR4 PCB, single-sided copper, with 100cm
2
copper pad area.
PARAMETER
Reverse Breakdown Voltage (Note 1)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-189.B
MGBR12L45
TYPICAL CHARACTERISTICS
DIODE
Instantaneous Reverse Current (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Instantaneous Forward Current (A)
Average Rectified Current (A)
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QW-R601-189.B
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参数对比
与MGBR12L45相近的元器件有:MGBR12L45G-T27-R、MGBR12L45L-T27-R。描述及对比如下:
型号 MGBR12L45 MGBR12L45G-T27-R MGBR12L45L-T27-R
描述 MOS GATED BARRIER RECTIFIER MOS GATED BARRIER RECTIFIER MOS GATED BARRIER RECTIFIER
是否Rohs认证 - 符合 符合
包装说明 - R-PDSO-F3 R-PDSO-F3
Reach Compliance Code - compli compli
ECCN代码 - EAR99 EAR99
应用 - GENERAL PURPOSE GENERAL PURPOSE
外壳连接 - CATHODE CATHODE
配置 - SINGLE SINGLE
二极管元件材料 - SILICON SILICON
二极管类型 - RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) - 0.6 V 0.6 V
JEDEC-95代码 - TO-277 TO-277
JESD-30 代码 - R-PDSO-F3 R-PDSO-F3
最大非重复峰值正向电流 - 180 A 180 A
元件数量 - 1 1
相数 - 1 1
端子数量 - 3 3
最高工作温度 - 150 °C 150 °C
最低工作温度 - -65 °C -65 °C
最大输出电流 - 12 A 12 A
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - RECTANGULAR RECTANGULAR
封装形式 - SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED
最大重复峰值反向电压 - 45 V 45 V
最大反向电流 - 300 µA 300 µA
表面贴装 - YES YES
端子形式 - FLAT FLAT
端子位置 - DUAL DUAL
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED
Base Number Matches - 1 1
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