首页 > 器件类别 >

MGBR20L50L-T27-T

MOS GATED BARRIER RECTIFIER

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

下载文档
文档预览
UNISONIC TECHNOLOGIES CO., LTD
MGBR20L50
MOS GATED BARRIER
RECTIFIER
DESCRIPTION
Preliminary
DIODE
The UTC
MGBR20L50
is a surface mount mos gated barrier
rectifier, it uses UTC’s advanced technology to provide customers
with low forward voltage drop and high switching speed etc.
The UTC
MGBR20L50
suitable for supply applications.
FEATURES
* Low forward voltage drop
* High switching speed
SYMBOL
TO-220-2 / DFN-8(5×6)
TO-277
ORDERING INFORMATION
Package
TO-220-2
TO-277
DFN-8(5×6)
1
K
A
A
Pin Assignment
2 3 4 5 6 7 8
A - - - - - -
K A - - - - -
A A NC K K K K
Packing
Tube
Tape Reel
Tape Reel
Ordering Number
Lead Free
Halogen Free
MGBR20L50L-TA2-T
MGBR20L50G-TA2-T
MGBR20L50L-T27-T
MGBR20L50G-T27-T
-
MGBR20L50G-K08-5060-R
Note: Pin Assignment: A: Anode
K: Cathode
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R601-129.c
MGBR20L50
MARKING
PACKAGE
Preliminary
DIODE
MARKING
TO-220-2
TO-277
DFN-8(5×6)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R601-129.c
MGBR20L50
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
V
RM
50
V
Working Peak Reverse Voltage
V
RWM
50
V
Peak Repetitive Reverse Voltage
V
RRM
50
V
Average Rectified Forward Current
I
O
20
A
(Rated VR-20Khz Square Wave) - 50% Duty Cycle
Peak Forward Surge Current - 1/2 60hz
I
FSM
250
A
Peak Repetitive Reverse Surge Current (2uS-1Khz)
I
RRM
2
A
Maximum Rate of Voltage Change ( at Rated V
R
)
dv/dt
10000
V/μS
Operating Junction Temperature
T
J
-65~+150
°C
Storage Junction Temperature
T
STG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
TO-220-2
TO-277
DFN-8(5×6)
θ
JA
RATINGS
60
73 (Note 3)
72
UNIT
°C/W
Junction to Ambient
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
SYMBOL
V
(BR)R
MIN
50
TYP MAX UNIT
V
0.63
V
0.58
V
300 µA
100 mA
TEST CONDITIONS
I
R
=0.50mA
I
F
=20A, T
J
=25°C
Forward Voltage
V
FM
I
F
=20A, T
J
=125°C
V
R
=50V, T
J
=25°C
Reverse Current (Note 1)
I
RM
V
R
=50V, T
J
=125°C
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
3. Mounted on an FR4 PCB, single-sided copper, with 100 cm
2
copper pad area.
PARAMETER
Reverse Breakdown Voltage (Note 1)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R601-129.c
MGBR20L50
Preliminary
DIODE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R601-129.c
查看更多>
参数对比
与MGBR20L50L-T27-T相近的元器件有:MGBR20L50G-T27-T、MGBR20L50G-TA2-T、MGBR20L50L-TA2-T、MGBR20L50_15。描述及对比如下:
型号 MGBR20L50L-T27-T MGBR20L50G-T27-T MGBR20L50G-TA2-T MGBR20L50L-TA2-T MGBR20L50_15
描述 MOS GATED BARRIER RECTIFIER MOS GATED BARRIER RECTIFIER MOS GATED BARRIER RECTIFIER MOS GATED BARRIER RECTIFIER MOS GATED BARRIER RECTIFIER
ADI 2017年12月最新中文资料
需要哪篇,点击链接 https://ezchina.analog.com/thread/174...
向月葵 模拟电子
SP路在何方
随着中国加入WTO,移动运营商将不断增多,这将导致市场环境更加规范与开放,国家政策对SP产品的规范...
mdreamj RF/无线
自己做pcb热传印时,没有热传印机,能不能用一块大铁块压住热传印纸用热风枪吹?
如题,因为本人手上没有热传印机,只有热风枪,看了热传印过程,觉得应该是可以的吧 自己做pcb热传印...
赵怡彬 PCB设计
求助:IAR怎么通过JTAG下载调试
RT,IAR怎么通过JTAG下载调试?需要怎么设置? 求助:IAR...
amyhu stm32/stm8
谁用过HM62256 我想对其进行读写 谁能吧汇编语言帮我翻译一下
有一个汇编语言的程序 谁能帮忙翻译一下 ORG 0000H LJMP START ORG 0040H...
backhuli 工控电子
二极管的特性与应用
二极管的特性与应用 几乎在所有的电子电路中,都要用到半导体二极管,它在...
zdr 测试/测量
热门器件
热门资源推荐
器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
需要登录后才可以下载。
登录取消