首页 > 器件类别 >

MGBR20L60CG-TND-R

DUAL MOS GATED BARRIER RECTIFIERS

厂商名称:UNISONIC TECHNOLOGIES CO.,LTD

厂商官网:http://www.unisonic.com.tw/

下载文档
文档预览
UNISONIC TECHNOLOGIES CO., LTD
MGBR20L60C
DUAL MOS GATED BARRIER
RECTIFIERS
DESCRIPTION
DIODE
The UTC
MGBR20L60C
is a dual mos gated barrier rectifiers, it
uses UTC’s advanced technology to provide customers with high
current capability, low forward voltage and high switching speed, etc.
FEATURES
* Low forward voltage
* High switching speed
* High current capability
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-252D
Pin Assignment
1
2
3
A
K
A
A
K
A
A
K
A
Packing
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
MGBR20L60CL-TA3-T
MGBR20L60CG-TA3-T
MGBR20L60CL-TF3-T
MGBR20L60CG-TF3-T
MGBR20L60CL-TND-R
MGBR20L60CG-TND-R
Note: Pin Assignment: A: Anode K: Common Cathode
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R601-122.D
MGBR20L60C
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
PARAMETER
SYMBOL
V
RM
V
RWM
V
RRM
DIODE
RATINGS
UNIT
DC Blocking Voltage
60
V
Working Peak Reverse Voltage
60
V
Peak Repetitive Reverse Voltage
60
V
Per Leg
10
A
Average Rectified Forward Current
I
O
Total
20
A
Peak Forward Surge Current
I
FSM
150
A
Operating Junction Temperature
T
J
-65~+150
°C
Storage Temperature
T
STG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
TO-220/TO-220F
TO-252D
TO-220
TO-220F
TO-252D
θ
JA
θ
JC
RATINGS
62.5
110
2
3.31
2.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
A
=25°C
unless otherwise specified.)
SYMBOL
V
(BR)R
MIN
60
TYP MAX UNIT
V
0.46
V
0.41
V
0.64
V
0.59
V
300
μA
20
mA
TEST CONDITIONS
I
R
=0.50mA
I
F
=5A, T
J
=25°C
I
F
=5A, T
J
=125°C
Instantaneous Forward Voltage
V
FM
I
F
=10A, T
J
=25°C
I
F
=10A, T
J
=125°C
V
RM
=60V, T
J
=25°C
Instantaneous Reverse Current (Note 1)
I
RM
V
RM
=60V, T
J
=125°C
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
PARAMETER
Reverse Breakdown Voltage (Note 1)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-122.D
MGBR20L60C
TYPICAL CHARACTERISTICS
Forward Derating Curve
DIODE
24
20
16
12
8
4
0
0
25
Instantantaneous Forward Current (A)
Average Rectified Current (A)
100
Typical Forward Characteristics
125°C
10
25°C
1.0
0.1
50
75
100
125 150
175
Case Temperature (°C)
Typical Reverse Characteristics
IF Pulse
Width=300uS
0.2
0.8
1.0
Instantaneous Forward Voltage (V)
0.4
0.6
1E-1
Instantaneous Reverse Current (A)
1E-2
1E-3
1E-4
1E-5
1E-6
1E-7
V
R
=60V
25
50
100
125
75
Case Temperature (°C)
150
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R601-122.D
查看更多>
参数对比
与MGBR20L60CG-TND-R相近的元器件有:MGBR20L60CG-TA3-T、MGBR20L60CG-TF3-T、MGBR20L60CL-TA3-T、MGBR20L60CL-TF3-T、MGBR20L60CL-TND-R、MGBR20L60C_15。描述及对比如下:
型号 MGBR20L60CG-TND-R MGBR20L60CG-TA3-T MGBR20L60CG-TF3-T MGBR20L60CL-TA3-T MGBR20L60CL-TF3-T MGBR20L60CL-TND-R MGBR20L60C_15
描述 DUAL MOS GATED BARRIER RECTIFIERS DUAL MOS GATED BARRIER RECTIFIERS DUAL MOS GATED BARRIER RECTIFIERS DUAL MOS GATED BARRIER RECTIFIERS DUAL MOS GATED BARRIER RECTIFIERS DUAL MOS GATED BARRIER RECTIFIERS DUAL MOS GATED BARRIER RECTIFIERS
热门器件
热门资源推荐
器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
需要登录后才可以下载。
登录取消