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MGBR20V150CL-TF3-T

DUAL MOS GATED BARRIER RECTIFIER

器件类别：分立半导体    二极管   

厂商名称：UNISONIC TECHNOLOGIES CO.,LTD

厂商官网：http://www.unisonic.com.tw/

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
UNISONIC TECHNOLOGIES CO.,LTD
包装说明
TO-220F, 3 PIN
Reach Compliance Code
compli
ECCN代码
EAR99
应用
GENERAL PURPOSE
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.85 V
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
最大非重复峰值正向电流
150 A
元件数量
2
相数
1
端子数量
3
最高工作温度
150 °C
最低工作温度
-65 °C
最大输出电流
10 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度（摄氏度）
NOT SPECIFIED
最大重复峰值反向电压
150 V
最大反向电流
100 µA
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
UNISONIC TECHNOLOGIES CO., LTD
MGBR20V150C
Preliminary
DIODE
DUAL MOS GATED BARRIER
RECTIFIER
DESCRIPTION
The UTC
MGBR20V150C
is a dual mos gated barrier rectifiers,
it uses UTC’s advanced technology to provide customers with low
forward voltage drop and high switching speed, etc.
FEATURES
* Very low forward voltage drop
* High switching speed
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F
Pin Assignment
1
2
3
A
K
A
A
K
A
Packing
Tube
Tube
Ordering Number
Lead Free
Halogen Free
MGBR20V150CL-TA3-T
MGBR20V150CG-TA3-T
MGBR20V150CL-TF3-T
MGBR20V150CG-TF3-T
Note: Pin Assignment: A: Anode
K: Cathode
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R601-166.c
MGBR20V150C
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (PER LEG)
(T
A
=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
V
RM
150
V
Working Peak Reverse Voltage
V
RWM
150
V
Peak Repetitive Reverse Voltage
V
RRM
150
V
Per Leg
10
A
Average Rectified Output Current Per Device
I
O
Total
20
A
Non-Repetitive Peak Forward Surge Current 8.3ms Single
I
FSM
200
A
Half Sine-Wave Superimposed on Rated Load
Operating Junction Temperature
T
J
-65~+150
°C
Storage Temperature
T
STG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS (PER LEG)
PARAMETER
SYMBOL
θ
JA
TO-220
TO-220F
θ
JC
RATINGS
62.5
2
3.31
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS (PER LEG)
(T
A
=25°C
unless otherwise specified.)
MIN
150
TYP MAX UNIT
V
0.85
V
0.75
V
100
μA
20
mA
PARAMETER
Reverse Breakdown Voltage (Note 1)
SYMBOL
TEST CONDITIONS
V
(BR)R
I
R
=0.50mA
I
F
=10A, T
J
=25°C
Forward Voltage Drop
V
FM
I
F
=10A, T
J
=125°C
V
R
=150V, T
J
=25°C
Leakage Current (Note 1)
I
RM
V
R
=150V, T
J
=125°C
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-166.c
MGBR20V150C
Preliminary
DIODE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R601-166.c
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参数对比
与MGBR20V150CL-TF3-T相近的元器件有：MGBR20V150CG-TA3-T、MGBR20V150CG-TF3-T、MGBR20V150CL-TA3-T、MGBR20V150C_15。描述及对比如下：
型号 MGBR20V150CL-TF3-T MGBR20V150CG-TA3-T MGBR20V150CG-TF3-T MGBR20V150CL-TA3-T MGBR20V150C_15
描述 DUAL MOS GATED BARRIER RECTIFIER DUAL MOS GATED BARRIER RECTIFIER DUAL MOS GATED BARRIER RECTIFIER DUAL MOS GATED BARRIER RECTIFIER DUAL MOS GATED BARRIER RECTIFIER
是否Rohs认证 符合 符合 符合 符合 -
厂商名称 UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD -
包装说明 TO-220F, 3 PIN R-PSFM-T3 TO-220F, 3 PIN TO-220, 3 PIN -
Reach Compliance Code compli compli compli compli -
ECCN代码 EAR99 EAR99 EAR99 EAR99 -
应用 GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE -
配置 COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS -
二极管元件材料 SILICON SILICON SILICON SILICON -
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
最大正向电压 (VF) 0.85 V 0.85 V 0.85 V 0.85 V -
JEDEC-95代码 TO-220AB TO-220AB TO-220AB TO-220AB -
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 -
最大非重复峰值正向电流 150 A 150 A 150 A 150 A -
元件数量 2 2 2 2 -
相数 1 1 1 1 -
端子数量 3 3 3 3 -
最高工作温度 150 °C 150 °C 150 °C 150 °C -
最低工作温度 -65 °C -65 °C -65 °C -65 °C -
最大输出电流 10 A 10 A 10 A 10 A -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
最大重复峰值反向电压 150 V 150 V 150 V 150 V -
最大反向电流 100 µA 100 µA 100 µA 100 µA -
表面贴装 NO NO NO NO -
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
端子位置 SINGLE SINGLE SINGLE SINGLE -
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
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