< High-power GaAs FET (small signal gain stage) >
MGF0916A
L & S BAND / 0.2W
SMD non - matched
DESCRIPTION
The MGF0916A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm
High power gain
Gp=19dB(TYP.) @f=1.9GHz
High power added efficiency
add=30%(TYP.)
@f=1.9GHz,Pin=5dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
Fig.1
Ids=100mA
Rg=1k
RECOMMENDED BIAS CONDITIONS
Vds=6V
Delivery
-01:Tape
& Reel(1K),
-03:Trai(50pcs)
(Ta=25C)
Absolute maximum ratings
Symbol
V
GSO
I
D
I
GR
I
GF
P
T
Tch
Tstg
Parameter
Gate to sourcebreakdown voltage
Ratings
-8
-8
250
-0.6
1.5
1.5
175
-65 to +175
(Ta=25C)
Unit
V
V
mA
mA
mA
W
C
C
V
GDO Gate to drain breakdown voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Electrical characteristics
Symbol
I
DSS
V
GS(off)
gm
Po
add
G
LP
NF
Rth(ch-c)
Parameter
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Noise figure
Thermal Resistance
*1
Test conditions
Min.
V
DS
=3V,V
GS
=0V
V
DS
=3V,I
D
=0.1mA
V
DS
=3V,I
D
=100mA
V
DS
=6V,I
D
=100mA,f=1.9GHz
Pin=5dBm
V
DS
=6V,I
D
=100mA,f=1.9GHz
Vf
Method
150
-1.5
-
-
-
-
-
-
Limits
Typ.
200
-
90
23
30
19
1
70
Max.
250
-4.5
-
-
-
-
-
100
Unit
mA
V
mS
dBm
%
dB
dB
C/W
*1:
Channel to case /
Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0916A
L & S BAND / 0.2W
SMD non - matched
MGF0916A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin
26
24
22
20
Po(dBm)
18
16
14
12
10
8
6
-15
-10
-5
0
Pin(dBm)
5
10
15
Gp
VDS=6V
ID=0.1A
f=1.9GHz
50
Po
45
40
PAE
Gp(dB),PAE(%)
35
30
25
20
15
10
5
0
IM3,Po(SCL) vs. Pi(SCL)
30
20
Po(SCL) (dBm)
10
0
10
VD=6V
ID=100mA
f1=1.90GHz
f2=1.91GHz
Po
0
-10
-20
IM3 (dBc)
IM3
-30
-40
-50
-60
-25
-20
-15
-10
-5
0
5
10
Pi(SCL) (dBm)
-10
-20
-30
-40
Publication Date : Apr., 2011
2
< High-power GaAs FET (small signal gain stage) >
MGF0916A
L & S BAND / 0.2W
SMD non - matched
MGF0916A S PARAMETERS
freq.
(MHz)
600
1000
1400
1800
2200
2600
3000
3400
3800
4200
4600
5000
5400
5800
6200
6600
7000
7400
7800
8200
8600
9000
9400
9800
10200
10600
11000
11400
11800
12200
Gate Mark
Round corner
(1)
(Ta=25C,VD=6V,ID=100mA, Reference Plane see Fig.1)
S21
S12
(mag)
0.016
0.023
0.027
0.029
0.030
0.030
0.030
0.029
0.029
0.028
0.028
0.028
0.029
0.030
0.031
0.033
0.036
0.038
0.041
0.044
0.047
0.050
0.054
0.057
0.061
0.065
0.070
0.075
0.081
0.088
(ang)
60.06
45.59
32.76
21.52
11.83
3.59
-3.30
-8.97
-13.57
-17.24
-20.15
-22.48
-24.39
-26.06
-27.67
-29.37
-31.33
-33.68
-36.55
-40.05
-44.27
-49.26
-55.06
-61.67
-69.05
-77.14
-85.81
-94.92
-104.26
-113.56
2.0
0.80
0.8
S11
(mag)
0.954
0.915
0.887
0.866
0.852
0.844
0.829
0.822
0.813
0.806
0.802
0.792
0.779
0.763
0.741
0.714
0.688
0.660
0.628
0.590
0.540
0.477
0.400
0.311
0.217
0.126
0.073
0.113
0.188
0.260
(ang)
-40.32
-62.48
-80.56
-95.15
-106.84
-116.18
-123.68
-129.83
-135.06
-139.74
-144.18
-148.63
-153.25
-158.12
-163.24
-168.50
-173.69
-178.49
176.97
172.29
167.52
162.13
155.63
146.74
133.83
110.51
51.97
-5.75
-27.30
-36.27
(mag)
7.263
6.256
5.395
4.664
4.047
3.529
3.099
2.743
2.452
2.215
2.025
1.874
1.755
1.661
1.589
1.533
1.490
1.457
1.430
1.409
1.391
1.374
1.358
1.342
1.325
1.306
1.286
1.262
1.236
1.206
S22
(mag)
0.477
0.509
0.543
0.578
0.613
0.646
0.679
0.708
0.736
0.760
0.782
0.801
0.817
0.831
0.843
0.853
0.861
0.868
0.874
0.879
0.883
0.886
0.888
0.888
0.886
0.880
0.871
0.857
0.836
0.806
(ang)
-37.47
-57.48
-73.42
-86.07
-96.10
-104.09
-110.51
-115.77
-120.19
-124.02
-127.46
-130.64
-133.65
-136.55
-139.35
-142.06
-144.65
-147.09
-149.36
-151.43
-153.28
-154.93
-156.42
-157.81
-159.22
-160.83
-162.85
-165.57
-169.37
-174.68
K
0.25
0.32
0.37
0.44
0.51
0.60
0.72
0.84
0.93
1.05
1.09
1.16
1.17
1.19
1.22
1.23
1.19
1.21
1.21
1.23
1.27
1.33
1.36
1.40
1.40
1.39
1.36
1.35
1.36
1.42
MAG/MSG
(ang)
145.11
126.36
110.17
96.15
83.93
73.20
63.67
55.09
47.23
39.92
32.99
26.30
19.72
13.18
6.57
-0.16
-7.07
-14.20
-21.60
-29.29
-37.32
-45.70
-54.48
-63.70
-73.41
-83.66
-94.52
-106.08
-118.45
-131.74
(dB)
26.57
24.35
23.01
22.06
21.30
20.71
20.14
19.76
19.27
17.60
16.73
15.86
15.29
14.78
14.24
13.79
13.50
13.08
12.67
12.17
11.56
10.94
10.41
9.95
9.62
9.31
9.08
8.73
8.26
7.52
Gate Mark
(1)
Reference Plane
4.20
1.20
(3)
Reference Plane
(2)
4.00
0.25
(2)
0.6
2.5
(1) Gate
(2) Drain
(3) Source
0.3
BACK SIDE PATTERN
(Unit:mm)
Fig.1 OUTLINE DRAWING
Publication Date : Apr., 2011
3
2.8
< High-power GaAs FET (small signal gain stage) >
MGF0916A
L & S BAND / 0.2W
SMD non - matched
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Publication Date : Apr., 2011
4
