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MKP3V120RLG

250 V, SIDAC
250 V, 高压双向触发二极管

器件类别:模拟混合信号IC    触发装置   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:

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器件参数
参数名称
属性值
Brand Name
ON Semiconduc
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
ON Semiconductor(安森美)
零件包装代码
DO-201
包装说明
LEAD FREE, PLASTIC, CASE 267-03, 2 PIN
针数
2
制造商包装代码
267-03
Reach Compliance Code
_compli
ECCN代码
EAR99
Factory Lead Time
1 week
其他特性
UL RECOGNIZED
最大转折电压
130 V
最小转折电压
110 V
外壳连接
ISOLATED
配置
SINGLE
最大维持电流
100 mA
标称维持电流
100 mA
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
通态非重复峰值电流
20 A
元件数量
1
端子数量
2
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
表面贴装
NO
端子面层
Tin (Sn)
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
40
触发设备类型
SIDAC
文档预览
MKP3V120, MKP3V240
Preferred Device
Sidac High Voltage
Bidirectional Triggers
Bidirectional devices designed for direct interface with the AC
power line. Upon reaching the breakover voltage in each direction, the
device switches from a blocking state to a low voltage on-state.
Conduction will continue like a Triac until the main terminal current
drops below the holding current. The plastic axial lead package
provides high pulse current capability at low cost. Glass passivation
insures reliable operation.
Features
http://onsemi.com
SIDACS ( )
1 AMPERE RMS
120 and 240 VOLTS
MT1
MT2
High Pressure Sodium Vapor Lighting
Strobes and Flashers
Ignitors
High Voltage Regulators
Pulse Generators
Used to Trigger Gates of SCR's and Triacs
Indicates UL Registered - File #E116110
These are Pb-Free Devices*
MARKING DIAGRAM
AXIAL LEAD
(No Polarity)
CASE 267
STYLE 2
Value
Unit
V
"90
"180
"1.0
"20
A
A
A
MKP
3Vxx0
YYWW
G
G
A
= Assembly Location
xx
= 12 or 24
YY, Y
= Year
WW
= Work Week
G
= Pb-Free Package
(Note: Microdot may be in either location)
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off-State Voltage
(Sine Wave, 50 to 60 Hz, T
J
= -40 to 125°C)
MKP3V120
MKP3V240
On‐State RMS Current (T
L
= 80°C, Lead
Length = 3/8″, All Conduction Angles)
Peak Non-Repetitive Surge Current
(60 Hz One Cycle Sine Wave, Peak Value,
T
J
= 125°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM
,
V
RRM
I
T(RMS)
I
TSM
T
J
T
stg
- 40 to +125
- 40 to +150
°C
°C
ORDERING INFORMATION
Device
Package
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Shipping
500 Units/Box
500 Units/Box
1500/Tape & Reel
500 Units/Box
500 Units/Box
1500/Tape & Reel
1500/Tape & Reel
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Lead
(Lead Length = 3/8″)
Lead Solder Temperature
(Lead Length
w
1/16″ from Case, 10 s Max)
Symbol
R
qJL
T
L
Max
15
260
Unit
°C/W
°C
MKP3V120
MKP3V120G
MKP3V120RLG
MKP3V240
MKP3V240G
MKP3V240RL
MKP3V240RLG
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
Preferred
devices are recommended choices for future use
and best overall value.
1
June, 2007- Rev. 5
Publication Order Number:
MKP3V120/D
MKP3V120, MKP3V240
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Repetitive Peak Off-State Current
(50 to 60 Hz Sine Wave)
V
DRM
= 90 V
V
DRM
= 180 V
ON CHARACTERISTICS
Breakover Voltage, I
BO
= 200
mA
MKP3V120
MKP3V240
Breakover Current
Peak On-State Voltage
(I
TM
= 1 A Peak, Pulse Width
300
ms,
Duty Cycle
2%)
Dynamic Holding Current
(Sine Wave, 60 Hz, R
L
= 100
W)
Switching Resistance
(Sine Wave, 50 to 60 Hz)
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of On-State Current,
Critical Damped Waveform Circuit
(I
PK
= 130
W,
Pulse Width = 10
msec)
di/dt
-
120
-
A/ms
I
BO
V
TM
I
H
R
S
V
BO
110
220
-
-
-
0.1
-
-
-
1.1
-
-
130
250
200
1.5
100
-
mA
V
mA
kW
V
I
DRM
MKP3V120
MKP3V240
-
-
10
mA
Symbol
Min
Typ
Max
Unit
Voltage Current Characteristic of SIDAC
(Bidirectional Device)
+ Current
I
TM
I
H
I
S
I
DRM
V
S
I
(BO)
+ Voltage
V
(BO)
V
TM
Slope = R
S
Symbol
I
DRM
V
DRM
V
BO
I
BO
I
H
V
TM
I
TM
Parameter
Off State Leakage Current
Off State Repetitive Blocking Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
Peak on State Current
V
DRM
R
S
+
(V
(BO)
– V
S
)
(I
S
– I
(BO)
)
http://onsemi.com
2
MKP3V120, MKP3V240
CURRENT DERATING
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
130
TA , MAXIMUM ALLOWABLE AMBIENT
TEMPERATURE (
°
C)
120
α
α
= Conduction Angle
T
J
Rated = 125°C
α
140
120
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
a
= 180°
α
= Conduction Angle
T
J
Rated = 125°C
110
100
90
a
= 180°
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
80
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMPS)
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMPS)
Figure 1. Maximum Case Temperature
Figure 2. Maximum Ambient Temperature
1.0
0.8
0.6
0.4
0.3
0.2
25°C
125°C
PAV , MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
I T , INSTANTANEOUS ON-STATE CURRENT (AMPS)
1.25
a
= 180°
α
α
= Conduction Angle
T
J
Rated = 125°C
1.00
0.75
0.50
0.25
0.1
0.8
0.9
1.0
1.1
1.2
1.3
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
0
0.2
0.4
0.6
0.8
1.0
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMPS)
Figure 3. Typical Forward Voltage
Figure 4. Typical Power Dissipation
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3
MKP3V120, MKP3V240
THERMAL CHARACTERISTICS
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0 k
Z
qJL
(t) = R
qJL
r(t)
DT
JL
= P
pk
R
qJL
[r(t)]
t
p
TIME
where:
DT
JL
= the increase in junction temperature above the
lead temperature
r(t) = normalized value of transient thermal resistance at
time, t from this figure. For example,
r(t
p
) = normalized value of
transient resistance at time t
p
.
LEAD LENGTH =
1
/
4
The temperature of the lead should be
measured using a thermocouple placed on the
lead as close as possible to the tie point. The
thermal mass connected to the tie point is
normally large enough so that it will not
significantly respond to heat surges generated
in the diode as a result of pulsed operation
once steady-state conditions are achieved.
Using the measured value of T
L
, the junction
temperature may be determined by:
T
J
= T
L
+
DT
JL
2.0 k
5.0 k
10 k
20 k
Figure 5. Thermal Response
TYPICAL CHARACTERISTICS
100
90
I(BO) , BREAKOVER CURRENT (
m
A)
IH , HOLDING CURRENT (mA)
80
70
60
50
40
30
20
10
0
-60
-40
-20
0
20
40
60
80
100
120
140
250
225
200
175
150
125
100
75
50
25
0
-60
-40
-20
0
20
40
60
80
100
120 140
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Breakover Current
Figure 7. Typical Holding Current
http://onsemi.com
4
MKP3V120, MKP3V240
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 267-03
ISSUE G
K
D
1
A
2
NOTES:
1. DIMENSIONS AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 267-01 AND 267-02 OBSOLETE, NEW STANDARD
267-03.
DIM
A
B
D
K
INCHES
MIN
MAX
0.370
0.380
0.190
0.210
0.048
0.052
1.000
---
NO POLARITY
MILLIMETERS
MIN
MAX
9.40
9.65
4.83
5.33
1.22
1.32
25.40
---
B
K
STYLE 2:
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
 Literature Distribution Center for ON Semiconductor
 P.O. Box 5163, Denver, Colorado 80217 USA
 Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
 Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
 Email: orderlit@onsemi.com
N. American Technical Support:
800-282-9855 Toll Free
 USA/Canada
Europe, Middle East and Africa Technical Support:
 Phone: 421 33 790 2910
Japan Customer Focus Center
 Phone: 81-3-5773-3850
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
5
MKP3V120/D
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参数对比
与MKP3V120RLG相近的元器件有:MKP3V240RLG、MKP3V240G、MKP3V120_06、MKP3V120RL、MKP3V120、MKP3V120G。描述及对比如下:
型号 MKP3V120RLG MKP3V240RLG MKP3V240G MKP3V120_06 MKP3V120RL MKP3V120 MKP3V120G
描述 250 V, SIDAC 250 V, SIDAC ON SEMICONDUCTOR - MKP3V240G - SIDAC; 250V; 1A; 267-03 250 V, SIDAC 250 V, SIDAC 250 V, SIDAC 250 V, SIDAC
元件数量 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Brand Name ON Semiconduc ON Semiconduc ON Semiconduc - - - ON Semiconduc
是否无铅 不含铅 不含铅 不含铅 - - - 不含铅
是否Rohs认证 符合 符合 符合 - 不符合 符合 符合
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) - ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 DO-201 DO-201 DO-201 - DO-201 DO-201 DO-201
包装说明 LEAD FREE, PLASTIC, CASE 267-03, 2 PIN LEAD FREE, PLASTIC, CASE 267-03, 2 PIN LEAD FREE, PLASTIC, CASE 267-03, 2 PIN - LEAD FREE, PLASTIC, CASE 267-05, 2 PIN LEAD FREE, PLASTIC, CASE 267-03, 2 PIN LEAD FREE, PLASTIC, CASE 267-03, 2 PIN
针数 2 2 2 - 2 2 2
制造商包装代码 267-03 267-03 267-03 - CASE 267-05 CASE 267-03 267-03
Reach Compliance Code _compli _compli _compli - _compli _compli _compli
ECCN代码 EAR99 EAR99 EAR99 - EAR99 EAR99 EAR99
Factory Lead Time 1 week 1 week 1 week - - - 1 week
其他特性 UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED - UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
最大转折电压 130 V 250 V 250 V - 130 V 130 V 130 V
最小转折电压 110 V 220 V 220 V - 110 V 110 V 110 V
外壳连接 ISOLATED ISOLATED ISOLATED - ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE
最大维持电流 100 mA 100 mA 100 mA - 100 mA 100 mA 100 mA
标称维持电流 100 mA 100 mA 100 mA - 100 mA 100 mA 100 mA
JESD-30 代码 O-PALF-W2 O-PALF-W2 O-PALF-W2 - O-PALF-W2 O-PALF-W2 O-PALF-W2
JESD-609代码 e3 e3 e3 - e0 e3 e3
通态非重复峰值电流 20 A 20 A 20 A - 20 A 20 A 20 A
最高工作温度 125 °C 125 °C 125 °C - 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C - -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND - ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM - LONG FORM LONG FORM LONG FORM
峰值回流温度(摄氏度) 260 260 260 - NOT SPECIFIED 260 260
认证状态 Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO - NO NO NO
端子面层 Tin (Sn) Tin (Sn) Tin (Sn) - Tin/Lead (Sn/Pb) Tin (Sn) Tin (Sn)
处于峰值回流温度下的最长时间 40 40 40 - NOT SPECIFIED 40 40
触发设备类型 SIDAC SIDAC SIDAC - SIDAC SIDAC SIDAC
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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