PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI LASER DIODES
ML9xx19 SERIES
2.5Gbps InGaAsP DFB LASER DIODES
TYPE
NAME
DESCRIPTION
ML925B19F
FEATURES
nλ/4
phase shifted grating structure
n
Wide temperature range operation
(0
o
C to 70
o
C)
nHigh
side-mode-suppression-ratio(typical 45dB)
nHigh
resonance frequency(typical 11GHz)
ML9XX19 series are uncooled DFB (Distributed Feedback) laser diodes for
2.5Gbps transmission emitting light beam with wavelength of 1470~1610nm.
λ/4
shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML9xx19 can operate
in the wide temperature range from 0
o
C to 70
o
C without any temperature
control. They are well suited for light source in long distance digital
transmission application of coarse WDM.
APPLICATION
n
2.5Gbps long-reach transmission
n
Coarse WDM application
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
IF
VRL
IRD
VRD
Tc
Tstg
Parameter
Light output power
Laser forward current
Laser reverse voltage
PD forward current
PD reverse voltage
Operation temperature
Storage temperature
Conditions
CW
-
-
-
-
-
-
Ratings
6
200
2
2
20
0 to +70
-40 to +100
Unit
mW
mA
V
mA
o
C
o
C
o
C
ELECTRICAL/OPTICAL CHARACTERISTICS(Tc=25
o
C)
Symbol
Ith
Iop
Vop
λp
η
θ//
θ⊥
SMSR
tr,tf
fr
Im
Id
Ct
Parameter
Threshold current
Operation current
Operating voltage
Peak wavelength
Slope efficiency
Beam divergence angle
(Parallel)
<1>
Beam divergence angle
(Perpendicular)
<1>
Side Mode suppression ratio
Rise and Fall time (10%-90%)
Resonance frequency
Monitor Current (PD)
Dark Current (PD)
Capacitance (PD)
Test Conditions
CW
CW,Tc=70
o
C
CW, Po=5mW,Tc=70
o
C
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW, Tc=0 ~ 70
o
C
2.48832Gbps, Ibias=Ith
short lead-pin
2.48832Gbps,Ibias=Ith,Ipp=40mA
CW, Po=5mW, VRD=1V,
VRD=5V
VRD=5V, f=1MHz
Min.
---
---
---
---
---
Typ.
Max.
30
50
60
100
1.8
---
40
47
---
150
---
2.0
1.0
20
Unit
mA
mA
V
nm
mW/mA
deg.
deg.
dB
psec
dB
mA
µA
pF
15
35
40
70
1.1
<* , **>
0.15
0.20
---
---
35
---
---
0.1
---
---
25
30
45
100
11
---
---
10
Note : <1> Exclude back facet reflection from a monitor PD
MITSUBISHI
ELECTRIC
Jun. 2002
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI LASER DIODES
ML9xx19 SERIES
2.5Gbps InGaAsP DFB LASER DIODES
<*> Peak Wavelength
Type
ML925B19F-04
ML925B19F-05
ML925B19F-06
ML925B19F-07
ML925B19F-08
ML925B19F-09
ML925B19F-10
ML925B19F-11
Symbol
Test Condition
Min.
1467
1487
1507
1527
1547
1567
1587
1607
Limits
Typ.
1470
1490
1510
1530
1550
1570
1590
1610
Unit
Max.
1473
1493
1513
1533
1553
1573
1593
1613
λp
CW
Po=5mW
Tc=25
o
C
nm
<*> Peak Wavelength
Type
ML925B19F-12
ML925B19F-13
ML925B19F-14
ML925B19F-15
ML925B19F-16
ML925B19F-17
ML925B19F-18
ML925B19F-19
Symbol
Test Condition
Min.
1468
1488
1508
1528
1548
1568
1588
1608
Limits
Typ.
1470
1490
1510
1530
1550
1570
1590
1610
Unit
Max.
1472
1492
1512
1532
1552
1572
1592
1612
λp
CW
Po=5mW
Tc=25
o
C
nm
OUTLINE DRAWINGS
ML925B19F
φ
5.6 +0
-0.03
φ
4.25
φ
3.55±0.1
(Dimension:mm)
(0.25)
(3)
2-90º
(4)
(2)
(0.25)
(3)
Case
(1)
(4)
1±0.1
0.25±0.03
(Glass)
φ
2.0Min.
φ
1.0Min.
1.27 ±0.03
Emitting Facet
Reference Plane
PD
LD
±0.1 2.1±0.15
1.2
(2)
(1)
18 ±1
φ
2.0±0.25
(P.C.D.)
(1)
(2)
4-φ 0.45±0.05
MITSUBISHI
ELECTRIC
Jun. 2002
