MLCE6.5 – MLCE170A
Available
1500 Watt Low Capacitance
Transient Voltage Suppressor
DESCRIPTION
Screening in
reference to
MIL-PRF-19500
available
This high-reliability plastic encapsulated Transient Voltage Suppressor (TVS) diode series for thru-hole
mounting includes a rectifier diode element in series and in the opposite direction. This allows it to
present a very low (< 100 pF) capacitance to the system it is protecting (see
Figure 2).
The low
capacitance of these devices makes them particularly useful for protecting lines carrying high frequency
signals. They are also useful in protecting from the secondary effects of lightning in airborne avionics per
IEC61000-4-5, RTCA/DO-160G, and ARINC 429. If bidirectional transient capability is required, two of
these low capacitance TVS devices may be used in parallel and opposite directions (anti-parallel) for
complete ac protection.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
•
•
•
•
•
High reliability with fabrication and assembly lot traceability.
All devices are 100% surge tested.
Unidirectional construction. For bidirectional applications, use two in anti-parallel (see
Figure 4).
Suppresses transients up to 1500 watts @10/1000μs (see
Figure 1).
Working standoff voltage (V
WM
) range 6.5 V to 170 V.
5% and 10% tolerance options available
Clamps transients in less than 100 pico seconds.*
3σ lot norm screening performed on standby current I
D
.
Moisture classification is level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
Screening options available in reference to MIL-PRF-19500. See
Part Nomenclature
below for all
available options, and to our
Hi-Rel Non-Hermetic Products
brochure on our web site for more
details.
RoHS compliant versions available.
*measurement limitation
Case 1 Package
Also available in:
SMCG & SMCJ
package
(tabbed surface mounts)
SMCG(J)LCE6.5 –
SMCG(J)LCE170
•
APPLICATIONS / BENEFITS
•
•
•
Protection from switching transients and induced RFI.
Low capacitance for data line protection to 1 MHz.
Protection for fast data rate lines in aircraft up to:
RTCA/DO-160G – level 5 Waveform 4 and Level 2 Waveform 5A in (also see
MicroNote 130)
ARINC 429, Part 1, paragraph 2.4.1.1 with bit rates of 100 kb/s.
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4.
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
Class 1: MLCE6.5A to MLCE170A
Class 2: MLCE6.5A to MLCE150A
Class 3: MLCE6.5A to MLCE70A
Class 4: MLCE6.5A to MLCE36A
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:
Class 1: MLCE6.5A to MLCE90A
Class 2: MLCE6.5A to MLCE45A
Class 3: MLCE6.5A to MLCE22A
Class 4: MLCE6.5A to MLCE11A
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:
Class 2: MLCE6.5A to MLCE20A
Class 3: MLCE6.5A to MLCE10A
•
•
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
•
•
RF01009, Rev. B (5/7/13)
©2013 Microsemi Corporation
Page 1 of 5
MLCE6.5 – MLCE170A
MAXIMUM RATINGS
@ 25 ºC unless otherwise stated
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Lead
Peak Pulse Power dissipation @ 25 ºC (at 10/1000
µs,
(2)
see
Figures 1, 2, and 3)
Rated Average Power Dissipation
T
L
= +40 ºC
(1)
T
A
= +25 ºC
Solder Temperature @ 10 s
Symbol
T
J
and T
STG
R
ӨJL
P
PP
P
M(AV)
T
SP
Value
-65 to +150
22
1500
5.0
1.52
260
Unit
ºC
ºC/W
W
W
o
C
Notes:
1. At 3/8 inch (10 mm) from body, or 82 ºC/W junction to ambient when mounted on FR4 PC board with 4 mm2 copper pads (1oz), track width
1 mm, length 25mm.
2. With a impulse repetition rate of 0.01% or less. TVS devices are not typically used for dc power dissipation and are instead operated at
≤ V
WM
except for transients that briefly drive the device into avalanche breakdown (V
BR
to V
C
region) of the TVS element. Also see
Application Schematics
for further protection details in rated peak power for unidirectional and bidirectional configurations respectively.
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating. Solderable to MIL-STD-750, method 2026.
MARKING: Part number.
POLARITY: Cathode indicated by band.
TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: Approximately 1.5 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
M
Reliability Level
M
MA
MX
MXL
*(see
High Reliability
Non-Hermetic Product
Portfolio)
Low Capacitance
Rated
LC
E
6.5
A
e3
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
Tolerance Level
A = +/- 5%
Blank = +/- 10%
Reverse Stand-Off Voltage
(see
Electrical Characteristics
table)
Encapsulated Plastic Package
RF01009, Rev. B (5/7/13)
©2013 Microsemi Corporation
Page 2 of 5
MLCE6.5 – MLCE170A
SYMBOLS & DEFINITIONS
Definition
Breakdown Current: The current used for measuring breakdown voltage V
(BR)
.
Standby Current: The current at the rated standoff voltage V
WM
.
Forward Current: The forward current dc value, no alternating component.
Peak Impulse Current: The peak current during the impulse.
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current I
PP
.
Clamping Voltage: The maximum clamping voltage at specified I
PP
(peak pulse current) at the specified pulse
conditions.
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Standoff Voltage: The maximum peak voltage that can be applied over the operating temperature range.
Symbol
I
(BR)
I
D
I
F
I
PP
P
PP
V
C
V
(BR)
V
WM
ELECTRICAL CHARACTERISTICS
@ 25 ºC unless otherwise stated
Working
Stand-Off
Voltage
V
WM
(Note 1)
Volts
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
80
90
100
110
120
130
150
160
170
Breakdown Voltage
V
(BR)
@ I
(BR)
Volts
Maximum
Stanby
Current
I
D
@ V
WM
µA
1000
500
250
100
50
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Maximum
Clamping
Voltage
V
C
@ I
PP
Volts
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.5
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
129
146
162
178
193
209
243
259
275
Maximum
Peak Pulse
Current
I
PP
Amps
100
100
100
100
100
97
88
82
75
70
65
61
57
54
51
46
42
39
36
33
31
28.1
25.8
23.3
21.6
20.6
19.4
18.2
17.2
16.0
15.5
14.6
13.3
12.4
11.6
10.3
9.3
8.4
7.8
7.2
6.2
5.8
5.4
Maximum
Capacitance
C @ 0 Volts,
f = 1 MHz
Working
Inverse
Blocking
Voltage
V
WIB
Volts
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
150
150
150
150
150
150
150
150
150
150
150
300
300
300
300
300
300
300
300
Inverse
Blocking
Leakage
Current
I
IB
µA
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Peak
Inverse
Blocking
Voltage
V
PIB
Volts
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
200
200
200
200
200
200
200
200
200
200
200
200
200
400
400
400
400
400
400
MICROSEMI
Part Number
MLCE6.5A
MLCE7.0A
MLCE7.5A
MLCE8.0A
MLCE8.5A
MLCE9.0A
MLCE10A
MLCE11A
MLCE12A
MLCE13A
MLCE14A
MLCE15A
MLCE16A
MLCE17A
MLCE18A
MLCE20A
MLCE22A
MLCE24A
MLCE26A
MLCE28A
MLCE30A
MLCE33A
MLCE36A
MLCE40A
MLCE43A
MLCE45A
MLCE48A
MLCE51A
MLCE54A
MLCE58A
MLCE60A
MLCE64A
MLCE70A
MLCE75A
MLCE80A
MLCE90A
MLCE100A
MLCE110A
MLCE120A
MLCE130A
MLCE150A
MLCE160A
MLCE170A
MIN
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
88.7
100
111
122
133
144
167
178
189
MAX
7.98
8.60
10.2
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86.0
92.1
98.0
111
123
135
147
159
185
197
209
mA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
pF
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
90
90
90
90
90
90
90
90
90
90
90
90
90
NOTE 1:
TVS are normally selected according to the reverse “standoff voltage” (V
WM
) which should be equal to or greater than the dc or continuous
peak operating voltage level.
RF01009, Rev. B (5/7/13)
©2013 Microsemi Corporation
Page 3 of 5
MLCE6.5 – MLCE170A
GRAPHS
P
PP
- Peak Pulse Power - kW
Pulse Time (tw) in µs
FIGURE 1
Peak Pulse Power vs Pulse Time (tw) in µs
RF01009, Rev. B (5/7/13)
©2013 Microsemi Corporation
Page 4 of 5
MLCE6.5 – MLCE170A
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for information only.
3. The major diameter is essentially constant along its length.
4. In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
Symbol
BD
BL
LD
LL
Dimensions
Inches
Millimeters
Min
Max
Min
Max
0.190
0.360
0.038
1.10
0.205
0.375
0.042
1.625
4.826
9.146
0.958
27.9
5.207
9.527
1.074
41.28
APPLICATION SCHEMATICS
The TVS low capacitance device configuration is shown in figure 2. As a further option for unidirectional applications, an additional
low capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in figure 3. In
applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low
capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should be of similar low
capacitance and also have a higher reverse voltage rating than the TVS clamping voltage V
C
. The Microsemi recommended
rectifier part number is the “ELCR80” for the application in figure 3. If using two (2) low capacitance TVS devices in anti-parallel for
bidirectional applications, this added protective feature for both directions (including the reverse of each rectifier diode) is also
provided. The unidirectional and bidirectional configurations in figure 3 and 4 will both result in twice the capacitance of figure 2.
FIGURE 2
TVS with internal Low
Capacitance Diode
FIGURE 3
Optional Unidirectional
configuration (TVS and
separate rectifier diode
in parallel)
FIGURE 4
Optional Bidirectional
configuration (two TVS
devices in anti-parallel)
RF01009, Rev. B (5/7/13)
©2013 Microsemi Corporation
Page 5 of 5
