See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
1
December, 2015 − Rev. 24
Publication Order Number:
MM3Z2V4ST1/D
MM3ZxxxST1G Series, SZMM3ZxxxST1G Series
MAXIMUM RATINGS
Rating
Total Device Dissipation FR−4 Board,
(Note 1) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance from Junction−to−Ambient
Junction and Storage Temperature Range
Symbol
P
D
300
2.4
R
qJA
T
J
, T
stg
416
−65 to +150
mW
mW/°C
°C/W
°C
Max
Unit
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. FR−4 printed circuit board, single−sided copper, mounting pad 1 cm
2
.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted,
V
F
= 0.9 V Max. @ I
F
= 10 mA for all types)
Symbol
V
Z
I
ZT
Z
ZT
I
ZK
Z
ZK
I
R
V
R
I
F
V
F
QV
Z
C
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
Maximum Temperature Coefficient of V
Z
Max. Capacitance @V
R
= 0 and f = 1 MHz
V
Z
V
R
I
R
V
F
I
ZT
V
I
F
I
Zener Voltage Regulator
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2
MM3ZxxxST1G Series, SZMM3ZxxxST1G Series
ELECTRICAL CHARACTERISTICS
(V
F
= 0.9 Max @ I
F
= 10 mA for all types)
Z
ZK
I
Z
= 0.5
mA
W
Max
1000
1000
1000
1000
1000
1000
1000
800
500
200
100
160
160
160
160
160
160
80
160
80
80
80
100
100
120
300
300
300
500
500
Z
ZT
I
Z
= IZT
@ 10%
Mod
W
Max
100
100
100
95
90
90
90
80
60
40
10
15
15
15
15
15
20
25
30
40
40
45
55
55
70
80
80
80
90
130
Max
IR @ VR
mA
50
20
10
5.0
5.0
3.0
3.0
3.0
2.0
1.0
3.0
2.0
1.0
0.7
0.5
0.5
0.1
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
6.0
8.0
8.0
8.0
11
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.2
25.2
27.3
d
VZ
/dt (mV/k)
@ I
ZT1
= 5 mA
Min
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
8.8
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
Max
0
0
0
0
0
−2.5
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10
11
12.7
14
16
18
20
22
25.3
29.4
33.4
37.4
41.2
Device*
MM3Z2V4ST1G
MM3Z2V7ST1G
MM3Z3V0ST1G
MM3Z3V3ST1G
MM3Z3V6ST1G
MM3Z3V9ST1G
MM3Z4V3ST1G
MM3Z4V7ST1G
MM3Z5V1ST1G
MM3Z5V6ST1G
MM3Z6V2ST1G
MM3Z6V8ST1G
MM3Z7V5ST1G
MM3Z8V2ST1G
MM3Z9V1ST1G
MM3Z10VST1G
MM3Z11VST1G
MM3Z12VST1G
MM3Z13VST1G
MM3Z15VST1G
MM3Z16VST1G
MM3Z18VST1G
MM3Z20VST1G
MM3Z22VST1G
MM3Z24VST1G
MM3Z27VST1G
MM3Z30VST1G
MM3Z33VST1G
MM3Z36VST1G
MM3Z39VST1G
Device
Marking
T2
T3
T4
T5
T6
T7
T8
T9
TA
TC
TE
TF
TG
TH
TK
WB
WC
TN
TQ
TP
TU
TW
U8
WP
WT
WQ
WV
WR
WU
WN
Test
Current
Izt mA
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.0
Zener Voltage VZ
Min
2.29
2.59
2.90
3.32
3.49
3.89
4.17
4.55
4.98
5.49
6.06
6.65
7.28
8.02
8.85
9.80
10.78
11.74
12.91
14.34
15.85
17.56
19.48
21.54
23.72
26.19
29.19
32.15
35.07
38.22
Max
2.51
2.81
3.11
3.53
3.71
4.16
4.43
4.75
5.2
5.73
6.33
6.93
7.6
8.36
9.23
10.20
11.22
12.24
13.49
14.98
16.51
18.35
20.46
22.47
24.78
27.53
30.69
33.79
36.87
39.78
C pF Max @
V
R
= 0
f = 1 MHz
450
450
450
450
450
450
450
260
225
200
185
155
140
135
130
130
130
130
120
130
105
100
85
85
80
70
70
70
70
45
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Include SZ-prefix devices where applicable.
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3
MM3ZxxxST1G Series, SZMM3ZxxxST1G Series
TYPICAL CHARACTERISTICS
1000
Z ZT , DYNAMIC IMPEDANCE (
Ω
)
T
J
= 25°C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
1000
IF, FORWARD CURRENT (mA)
100
100
I
Z
= 1 mA
10
5 mA
10
150°C
75°C
1.0
3.0
V
Z
, NOMINAL ZENER VOLTAGE
10
0.4
0.5
25°C
0°C
1.1
1.2
1.0
0.6
0.7
0.8
0.9
1.0
V
F
, FORWARD VOLTAGE (V)
Figure 1. Effect of Zener Voltage on
Zener Impedance
1000
IR, LEAKAGE CURRENT (
μ
A)
T
A
= 25°C
C, CAPACITANCE (pF)
0 V BIAS
1 V BIAS
1000
100
10
1.0
0.1
0.01
Figure 2. Typical Forward Voltage
100
BIAS AT
50% OF V
Z
NOM
10
+150°C
0.001
+ 25°C
−55°C
0
5.0
V
Z
, NOMINAL ZENER VOLTAGE (V)
10
0.0001
1.0
4.0
V
Z
, NOMINAL ZENER VOLTAGE (V)
10
0.00001
Figure 3. Typical Capacitance
Figure 4. Typical Leakage Current
100
T
A
= 25°C
I Z , ZENER CURRENT (mA)
100
80
POWER DISSIPATION (%)
0
2.0
4.0
6.0
V
Z
, ZENER VOLTAGE (V)
8.0
10
10
60
1.0
40
0.1
20
0
0.01
0
25
50
75
100
TEMPERATURE (°C)
125
150
Figure 5. Zener Voltage versus Zener Current
(V
Z
Up to 9 V)
Figure 6. Steady State Power Derating
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4
MM3ZxxxST1G Series, SZMM3ZxxxST1G Series
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1
0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C
0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
H
E
2.30
2.50
2.70
STYLE 1:
PIN 1. CATHODE
2. ANODE
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
H
E
D
b
1
2
E
MIN
0.031
0.000
A3
A
L
NOTE 5
C
NOTE 3
A1
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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