MM54C89 MM74C89 64-Bit TRI-STATE Random Access Read Write Memory
March 1988
MM54C89 MM74C89 64-Bit TRI-STATE
Random Access Read Write Memory
General Description
The MM54C89 MM74C89 is a 16-word by 4-bit random ac-
cess read write memory Inputs to the memory consist of
four address lines four data input lines a write enable line
and a memory enable line The four binary address inputs
are decoded internally to select each of the 16 possible
word locations An internal address register latches the ad-
dress information on the positive to negative transition of
the memory enable input The four TRI-STATE data output
lines working in conjunction with the memory enable input
provide for easy memory expansion
Address Operation
Address inputs must be stable t
SA
pri-
or to the positive to negative transition of memory enable It
is thus not necessary to hold address information stable for
more than t
HA
after the memory is enabled (positive to neg-
ative transition of memory enable)
Note
The timing is different than the DM7489 in that a positive to negative
transition of the memory enable must occur for the memory to be
selected
Read Operation
The complement of the information which
was written into the memory is non-destructively read out at
the four outputs This is accomplished by selecting the de-
sired address and bringing memory enable low and write
enable high
When the device is writing or disabled the output assumes a
TRI-STATE (Hi-z) condition
Features
Y
Y
Y
Y
Y
Y
Y
Wide supply voltage range
3 0V to 15V
Guaranteed noise margin
1 0V
High noise immunity
0 45 V
CC
(typ )
Low power
fan out of 2
TTL compatibility
driving 74L
Low power consumption
100 nW package (typ )
Fast access time
130 ns (typ ) at V
CC
e
10V
TRI-STATE output
Write Operation
Information present at the data inputs is
written into the memory at the selected address by bringing
write enable and memory enable low
Logic and Connection Diagrams
Dual-In-Line Package
Top View
TL F 5888 – 2
Order Number MM54C89
or MM74C89
TL F 5888 – 1
TRI-STATE is a registered trademark of National Semiconductor Corporation
C
1995 National Semiconductor Corporation
TL F 5888
RRD-B30M105 Printed in U S A
Absolute Maximum Ratings
(Note 1)
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Voltage at any Pin
Operating Temperature Range
MM54C89
MM74C89
Storage Temperature Range (T
S
)
b
0 3V to V
CC
a
0 3V
b
55 C to
a
125 C
b
40 C to
a
85 C
b
65 C to
a
150 C
Power Dissipation (P
D
)
Dual-In-Line
Small Outline
Operating V
CC
Range
Absolute Maximum V
CC
Lead Temperature (T
L
)
(Soldering 10 seconds)
700 mW
500 mW
3 0V to 15V
18V
260 C
DC Electrical Characteristics
Min
Symbol
CMOS TO CMOS
V
IN(1)
V
IN(0)
V
OUT(1)
V
OUT(0)
I
IN(1)
I
IN(0)
I
OZ
I
CC
V
IN(1)
V
IN(0)
V
OUT(1)
V
OUT(0)
Logical ‘‘1’’ Input Voltage
Logical ‘‘0’’ Input Voltage
Logical ‘‘1’’ Output Voltage
Logical ‘‘0’’ Output Voltage
Logical ‘‘1’’ Input Current
Logical ‘‘0’’ Input Current
Output Current in High
Impedance State
Supply Current
Logical ‘‘1’’ Input Voltage
Logical ‘‘0’’ Input Voltage
Logical ‘‘1’’ Output Voltage
Logical ‘‘0’’ Output Voltage
Parameter
Max limits apply across temperature range unless otherwise noted
Conditions
Min
35
80
15
20
45
90
05
10
b
0 005
b
1 0
b
1 0
b
0 005
Typ
Max
Units
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mA
V
V
V
CC
e
5 0V
V
CC
e
10V
V
CC
e
5 0V
V
CC
e
10V
V
CC
e
5 0V I
O
e b
10
mA
V
CC
e
10V I
O
e b
10
mA
V
CC
e
5 0V I
O
e a
10
mA
V
CC
e
10V I
O
e a
10
mA
V
CC
e
15V V
IN
e
15V
V
CC
e
15V V
IN
e
0V
V
CC
e
15V V
e
15V
V
CC
e
15V V
O
e
0V
V
CC
e
15V
54C V
CC
e
4 5V
74C V
CC
e
4 75V
54C V
CC
e
4 5V
74C V
CC
e
4 75V
54C V
CC
e
4 5V I
O
e b
360
mA
74C V
CC
e
4 75V I
O
e b
360
mA
54C V
CC
e
4 5V I
O
e a
360
mA
74C V
CC
e
4 75V I
O
e a
360
mA
V
CC
e
5 0V V
OUT
e
0V
T
A
e
25 C
V
CC
e
10V V
OUT
e
0V
T
A
e
25 C
V
CC
e
5 0V V
OUT
e
V
CC
T
A
e
25 C
V
CC
e
10V V
OUT
e
V
CC
T
A
e
25 C
10
10
300
0 005
b
0 005
0 05
V
CC
b
1 5
V
CC
b
1 5
CMOS LPTTL INTERFACE
08
08
24
24
04
04
V
V
V
V
V
V
OUTPUT DRIVE (See 54C 74C Family Characteristics Data Sheet) (Short Circuit Current)
I
SOURCE
I
SOURCE
I
SINK
I
SINK
Output Source Current
(P-Channel)
Output Source Current
(P-Channel)
Output Sink Current
(N-Channel)
Output Sink Current
(N-Channel)
b
1 75
b
8 0
b
3 3
b
15
mA
mA
mA
mA
1 75
80
36
16
Note 1
‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed Except for ‘‘Operating Range’’ they are not
meant to imply that the devices should be operated at these limits The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation
AC Electrical Characteristics
Symbol
t
pd
t
ACC
t
SA
t
HA
t
ME
Parameter
Propagation Delay from
Memory Enable
Access Time from
Address Input
Address Setup Time
Address Hold Time
Memory Enable Pulse Width
T
A
e
25 C C
L
e
50 pF unless otherwise noted
Conditions
V
CC
e
5V
V
CC
e
10V
V
CC
e
5V
V
CC
e
10V
V
CC
e
5V
V
CC
e
10V
V
CC
e
5V
V
CC
e
10V
V
CC
e
5V
V
CC
e
10V
2
150
60
60
40
400
150
250
90
Min
Typ
270
100
350
130
Max
500
220
650
280
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC Electrical Characteristics
Symbol
t
SR
t
WS
t
WE
t
HD
t
SD
t
1H
t
0H
Parameter
Write Enable Setup
Time for a Read
Write Enable Setup
Time for a Write
Write Enable Pulse Width
Data Input Hold Time
Data Input Setup
Propagation Delay from a Logical
‘‘1’’ or Logical ‘‘0’’ to the High
Impedance State from
Memory Enable
Propagation Delay from a Logical
‘‘1’’ or Logical ‘‘0’’ to the High
Impedance State from
Write Enable
Input Capacity
Output Capacity
Power Dissipation Capacity
T
A
e
25 C C
L
e
50 pF unless otherwise noted (Continued)
Conditions
V
CC
e
5V
V
CC
e
10V
V
CC
e
5V
V
CC
e
10V
V
CC
e
5V t
WS
e
0
V
CC
e
10V t
WS
e
0
V
CC
e
5V
V
CC
e
10V
V
CC
e
5V
V
CC
e
10V
V
CC
e
5V C
L
e
5 pF R
L
e
10k
V
CC
e
10V C
L
e
5 pF R
L
e
10k
300
100
50
25
50
25
180
b
85
Min
0
0
Typ
Max
Units
ns
ns
t
ME
t
ME
160
60
ns
ns
ns
ns
ns
ns
ns
ns
300
120
ns
ns
t
1H
t
0H
V
CC
e
50V C
L
e
5 pF R
L
e
10k
V
CC
e
10V C
L
e
5 pF R
L
e
10k
180
85
300
120
ns
ns
C
IN
C
OUT
C
PD
Any Input (Note 2)
Any Output (Note 2)
(Note 3)
5
65
230
pF
pF
pF
AC Parameters are guaranteed by DC correlated testing
Note 2
Capacitance is guaranteed by periodic testing
Note 3
C
PD
determines the no load AC power consumption of any CMOS device For complete explanation see 54C 74C Family Characteristics application note
AN-90
AC Electrical Characteristics
Parameter
t
PD
Conditions
V
CC
e
5V
V
CC
e
10V
V
CC
e
15V
V
CC
e
5V
V
CC
e
10V
V
CC
e
15V
V
CC
e
5V
V
CC
e
10V
V
CC
e
15V
V
CC
e
5V
V
CC
e
10V
V
CC
e
15V
V
CC
e
5V
V
CC
e
10V
V
CC
e
15V
V
CC
e
5V
V
CC
e
10V
V
CC
e
15V
V
CC
e
5V
V
CC
e
10V
V
CC
e
15V
210
90
70
80
55
45
560
210
170
420
140
110
70
35
30
Min
Guaranteed across the specified temperature range C
L
e
50 pF
MM74C89
T
A
e b
40 C to
a
85 C
Min
Max
600
265
210
780
345
270
180
80
60
70
50
40
480
180
150
360
120
100
60
30
25
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
MM54C89
T
A
e b
55 C to
a
125 C
Max
700
310
250
910
400
320
t
ACC
t
SA
t
HA
t
ME
t
WE
t
HD
AC Parameters are guaranteed by DC correlated testing
3
AC Electrical Characteristics
Guaranteed across the specified temperature range C
L
e
50 pF (Continued)
Parameter
t
SD
Conditions
V
CC
e
5V
V
CC
e
10V
V
CC
e
15V
V
CC
e
5V
V
CC
e
10V C
L
e
5 pF
V
CC
e
15V R
L
e
10 kX
MM54C89
T
A
e b
55 C to
a
125 C
Min
70
35
30
420
170
135
Max
MM74C89
T
A
e b
40 C to
a
85 C
Min
60
30
25
360
145
115
Max
ns
ns
ns
ns
ns
ns
Units
t
1H
t
0H
AC Parameters are guaranteed by DC correlated testing
