MMBD4448HAQW MMBD4448HSDW
MMBD4448HADW MMBD4448HTW
MMBD4448HCDW
Surface Mount Switching Multi-Chip
Diode Array
P b
Lead(Pb)-Free
MULTI-CHIP DIODES
500m AMPERES
100 VOLTS
Features:
* Fast Switching Speed
* Ultra-Small Surface Mount Package
* For General Purpose Switching Applications
* High Conductance Power Dissipation
6 5
1
4
2
3
Mechanical Data:
* Case : SOT-363
* Case Material : Molded Plastic. UL Flammability
Classification Ration 94V-0
* Moisture Sensitivity : Level 1 per J-STD-020C
* Terminals : Solderable per MIL-STD-202, Method 208
* Polarity : See Diagram
* Weight : 0.006 grams(appro)
SOT-363
SOT-363 Outline Dimensions
A
Unit:mm
SOT-363
4
6
5
B C
1
2
3
D
E
H
K
J
L
M
Dim
A
B
C
D
E
H
J
K
L
M
Min
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 REF
0.40
0.30
2.20
1.80
0.10
-
0.80
1.10
0.25
0.40
0.10
0.25
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MMBD4448HAQW MMBD4448HSDW
MMBD4448HADW MMBD4448HTW
MMBD4448HCDW
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current@ t = 1.0µs
@ t = 1.0s
Power Dissipation (Note 1)
Thermal Resistant Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
D
R
θJA
T
j
T
STG
Value
100
80
57
500
250
4.0
2.0
200
625
+150
-65 to +150
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
°C
Notes:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
I
R
= 100µA
Forward Voltage (Note 2)
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
Reverse Current (Note 2)
VR = 70V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
Total Capacitance
VR = 6V, f = 1.0MHz
Reverse Recovery Time
VR = 6V, IF= 5mA
Symbol
V
(BR)R
Min
80
0.62
-
-
-
Max
-
0.72
0.855
1.0
1.25
100
50
30
25
3.5
4.0
Unit
V
V
F
V
I
R
-
nA
µA
µA
nA
pF
ns
C
T
Trr
-
-
Notes:2. Short duration test pulse used to minimize self-heating effect.
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MMBD4448HAQW MMBD4448HSDW
MMBD4448HADW MMBD4448HTW
MMBD4448HCDW
Device Marking
Item
Marking
Eqivalent Circuit diagram
1
3
1
2
3
1
2
3
1
2
3
1
2
3
6
5
4
6
5
4
6
5
4
6
5
4
6
5
4
MMBD4448HAQW
KA5
MMBD4448HADW
KA6
MMBD4448HCDW
KA7
MMBD4448HSDW
KAB
MMBD4448HTW
KAA
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MMBD4448HAQW MMBD4448HSDW
MMBD4448HADW MMBD4448HTW
MMBD4448HCDW
Typical Characteristics
I
F
,INSTANTANEOUS FORWARD CURRENT (mA)
I
R
,INSTANTANEOUS REVERSE CURRENT (nA)
1000
10000
TA=125ºC
100
1000
100
TA=75ºC
10
TA= -40ºC
TA=0ºC
TA=25ºC
TA=75ºC
TA=125ºC
10
TA=25ºC
TA=0ºC
TA= -40ºC
1
1
0.1
0
0.4
0.8
1.2
1.6
0.1
0
20
40
60
80
100
V
F
,INSTANTANEOUS FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE(V)
Fig.1 Typical Forward Characteristics
Fig.2 Typical Reverse Characteristics
3
f=1MHz
P
d
,POWER DISSIPATION (mW)
250
200
C
T
,TOTAL CAPACITANCE (pF)
2.5
2
1.5
1
0.5
0
150
100
50
0
0
10
20
30
40
0
100
200
V
R
,REVERSEVOLTAGE(V)
T
A
, AMBIENT TEMPERATURE (°C)
Fig.3 Typical Capacitancevs .Reverse Voltage
Fig.4 Power Derating Curve, Total Package
2.5
T
rr
,REVERSE RECOVERY TIME (nS)
2.0
1.5
1.0
0.5
0
0
2
4
6
8
10
I
F
, FORWARD CURRENT (mA)
Fig.5 Reverse Recovery Time vs Forward Current
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