UNISONIC TECHNOLOGIES CO., LTD
MMBT1015
LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
BV
CEO
=-50V
*Collector current up to 150mA
*High h
FE
linearity
*Complement to MMBT1815
PNP SILICON TRANSISTOR
3
3
1
2
2
1
SOT-23
3
SOT-523
3
2
1
2
1
SOT-113
SOT-323
*Pb-free plating product number:
MMBT1015L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MMBT1015-x-AC3-R
MMBT1015L-x-AC3-R
MMBT1015-x-AE3-R
MMBT1015L-x-AE3-R
MMBT1015-x-AL3-R
MMBT1015L-x-AL3-R
MMBT1015-x-AN3-R
MMBT1015L-x-AN3-R
Package
SOT-113
SOT-23
SOT-323
SOT-523
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
MMBT1015L-x-AC3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) R: Tape Reel
(2) AC3: SOT-113, AE3: SOT-23, AL3: SOT323,
AN 3: SOT-523
(3) x: refer to Classification of h
FE1
(4) L: Lead Free Plating, Blank: Pb/Sn
MARKING
A4
Lead Plating
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-015,E
MMBT1015
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation
Collector Current
Base Current
SOT-23
SOT-523/SOT-113/SOT-323
SYMBOL
V
CBO
V
CEO
V
EBO
P
C
I
C
I
B
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
( Ta=25
°
C , unless otherwise specified )
RATINGS
-50
-50
-5
250
200
-150
-50
UNIT
V
V
V
mW
mW
mA
mA
Junction Temperature
T
J
125
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Output Capacitance
Noise Figure
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
BE(SAT)
I
CBO
I
EBO
h
FE1
h
FE2
f
T
C
OB
NF
TEST CONDITIONS
Ic = -100
µ
A, I
E
= 0
Ic = -10mA, I
B
= 0
I
E
= -10
µ
A, Ic = 0
Ic = -100mA, I
B
= -10mA
Ic = -100mA, I
B
= -10mA
V
CB
= -50V, I
E
= 0
V
EB
= -5V, Ic = 0
V
CE
= -6V, Ic = -2mA
V
CE
= -6V, Ic = -150mA
V
CE
= -10V, Ic = -1mA
V
CB
= -10V, I
E
= 0, f = 1MHz
Ic = -0.1mA, V
CE
= -6V
R
G
= 1k
Ω
, f = 100Hz
MIN
-50
-50
-5
TYP MAX UNIT
V
V
V
-0.1 -0.3
V
-1.1
V
-100 nA
-100 nA
700
MHz
pF
dB
120
25
80
4.0
0.5
7.0
6
CLASSIFICATION OF h
FE1
RANK
RANGE
Y
120-240
GR
200-400
BL
350-700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-015,E
MMBT1015
TYPICAL CHARACTERISTICS
Static Characteristics
-50
3
10
PNP SILICON TRANSISTOR
DC Current Gain
Collector Current, Ic (mA)
I
B
=- 3 0 0
µA
-30
DC Current Gain, h
FE
-40
V
CE
=-6V
2
10
I
B
=- 2 5 0
µA
I
B
=-2 0 0
µA
I
B
=- 1 5 0
µA
-20
1
10
-10
I
B
=- 1 0 0
µA
I
B
=-5 0
µA
0
-0
-4
-8
-12
-16
-20
0
10
-1
-10
0
-10
1
-10
2
-10
3
-10
Collector-Emitter Voltage ( V)
Collector Current , Ic (mA)
Base-Emitter on Voltage
2
-10
1
-10
Saturation Voltage
C ollector Current, Ic (mA)
Ic=1 0* I
B
V
CE
=-6V
1
-10
Saturation Voltage (V)
-10
0
V
BE (S A T)
0
-10
-1
-10
V
CE (S A T)
-1
-10
0
-0. 2
-0. 4
-0.6
-0.8
-1. 0
-2
-10
-1
-10
0
-10
1
-10
2
-10
-10
3
Base-Emitter Voltage (V)
Collector Current , Ic (mA)
Current Gain-Bandwidth
Product
3
10
Collector Output
Capacitance
2
10
-1
-10
Curr ent Gain-Bandwidth
T
product,f (MHz)
V
CE
=- 6V
C apacitance, C ob (pF)
2
10
1
10
f=1 MH z
I
E
=0
1
10
0
10
0
10
-1
10
-1
-10
0
-10
1
-10
2
-10
0
-10
1
-10
2
-10
3
-10
Collector Current , Ic (mA)
Collector- Base Voltage (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R206-015,E
MMBT1015
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R206-015,E
模拟与混合信号
