D
e
NPN Transistors
MMBT2222A
(K MBT2222A)
SOT-23-3
+0.2
2.9
-0.1
+0.1
0.4
-0.1
s st
s
Unit: mm
3
+0.2
2.8
-0.1
■
●
●
)
+0.2
1.6
-0.1
1
2
0.55
0.4
0.95
+0.1
-0.1
+0.02
0.15
-0.02
+0.1
-0.2
1.9
+0.2
1.1
-0.1
1. Base
2. Emitter
+0.1
0.68
-0.1
0-0.1
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Power Dissipation
Thermal resistance from junction to ambient
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θJA
T
J
T
stg
Rating
70
40
6
600
250
417
3. Collector
Unit
V
mA
mW
℃/W
℃
150
-55 to 150
■
Electrical Characteristics Ta = 25℃
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cutoff current
Collector cut-off current
Emitter cutoff current
DC current gain
Symbol
Test conditions
Min
75
40
6
100
10
100
40
100
42
0.3
1
0.6
300
10
25
225
60
1.2
2
V
V
V
V
MHz
ns
ns
ns
ns
300
Typ
Max
Unit
V
V
V
nA
nA
nA
V
(BR)CBO
I
C
= 100 μA, I
E
= 0
V
(BR)CEO
I
C
= 10 mA, I
B
= 0
V
(BR)EBO
I
CBO
I
CEX
I
EBO
h
FE
I
E
= 100 μ A, I
C
= 0
V
CB
=60V, I
E
=0
V
CE
=30V,V
EB(off)
=-3V
V
EB
= 3V, I
C
=0
V
CE
=10V, I
C
= 0.1mA
V
CE
=10V, I
C
= 150mA
V
CE
=10V, I
C
= 500mA
collector-emitter saturation voltage *
base-emitter saturation voltage *
Transition frequency
Delay time
Rise time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
t
d
t
r
t
s
t
f
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 20 mA; V
CE
= 20 V; f = 100 MHz
V
CC
=30V, V
BE(off)
=-0.5V,
I
C
=150mA , I
B1
= 15mA
V
CC
=30V, I
C
=150mA,I
B1
=-I
B2
=15mA
■
Mrarking
Marking
* pulse test: Pulse Width
≤300μs,
Duty Cycle≤ 2.0%.
1P
e
c
c
1
SMD Type
NPN Transistors
MMBT2222A
■
Typical Characterisitics
1000
350
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
T
A
= 125°C
Transistors
(K MBT2222A)
h
FE
, DC CURRENT GAIN
100
T
A
= -25°C
T
A
= +25°C
10
V
CE
= 1.0V
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Tem perature
1
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 2, Typical DC Current Gain vs
Collector Current
30
20
Cibo
2.
0
1.8
V
CE
COLLECTOR-EMITTER VOLTAGE (V)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
100
I
C
= 300mA
I
C
= 30mA
I
C
= 1mA
I
C
= 10mA
I
C
= 100mA
10
CAPACITANCE (pF)
5.0
Cobo
1.0
0.1
1.0
10
50
REVERSE VOLTS (V)
Fig. 3 Typical Capacitance
I
B
, BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation gion
Re
2
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