MMBT2222A
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT2907A)
Ideal for Low Power Amplification and Switching
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
•
•
•
•
•
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Leads; Solderable per MIL-STD-
202, Method 208
Weight: 0.008 grams (approximate)
C
SOT23
E
B
C
B
Top View
Pin-Out
E
Top View
Device Symbol
Ordering Information
(Note 4 & 5)
Product
MMBT2222A-7-F
MMBT2222A-13-F
MMBT2222AQ-7-F
Notes:
Compliance
AEC-Q101
AEC-Q101
Automotive
Marking
K1P / C1P
K1P / C1P
K1P
Reel size (inches)
7
13
7
Tape width (mm)
8
8
8
Quantity per reel
3,000
10,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com.
Marking Information
K = SAT (Shanghai Assembly / Test site)
1P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
C = CAT (Chengdu Assembly / Test site)
1P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
K1P
Date Code Key
Year
Code
Month
Code
YM
2010
X
Jan
1
Feb
2
2011
Y
Mar
3
2012
Z
Apr
4
May
5
2013
A
Jun
6
2014
B
Jul
7
Aug
8
2015
C
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
MMBT2222A
Document number: DS30041 Rev. 13 - 2
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August 2012
© Diodes Incorporated
MMBT2222A
Maximum Ratings
(@T
A
= +25°C unless otherwise specified)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
75
40
6.0
600
800
Unit
V
V
V
mA
mA
Thermal Characteristics
(@T
A
= +25°C unless otherwise specified)
Characteristic
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 8)
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
310
350
403
357
350
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings
(Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
≥
8,000
≥
400
Unit
V
V
JEDEC Class
3B
C
6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition; the device is
measured when operating in a steady-state condition.
7. Same as Note 6, except the device is mounted on 15mm X 15mm X 1.6mm FR4 PCB
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT2222A
Document number: DS30041 Rev. 13 - 2
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August 2012
© Diodes Incorporated
MMBT2222A
Thermal Characteristics
0.4
400
Max Power Dissipation (W)
Thermal Resistance (°C/W)
350
300
250
200
150
100
50
0
100µ
1m
10m 100m
D=0.2
D=0.5
D=0.1
Single Pulse
D=0.05
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
1
10
100
1k
Temperature (°C)
Pulse Width (s)
Derating Curve
10
Transient Thermal Impedance
Max Power Dissipation (W)
Single Pulse. T
amb
=25°C
1
0.1
10m
100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
MMBT2222A
Document number: DS30041 Rev. 13 - 2
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August 2012
© Diodes Incorporated
MMBT2222A
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic (Note 9)
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 9)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEX
I
EBO
I
BL
Min
75
40
6.0
⎯
⎯
⎯
⎯
35
50
75
100
40
50
35
⎯
0.6
⎯
⎯
—
300
⎯
Max
⎯
⎯
⎯
10
10
10
20
⎯
⎯
⎯
300
⎯
⎯
⎯
0.3
1.0
1.2
2.0
8
25
⎯
4.0
Unit
V
V
V
nA
μA
nA
nA
nA
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= 150°C
V
CE
= 60V, V
EB(OFF)
= 3.0V
V
EB
= 3.0V, I
C
= 0
V
CE
= 60V, V
EB(OFF)
= 3.0V
I
C
= 100μA, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V, T
A
= -55°C
I
C
= 150mA, V
CE
= 1.0V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 20V, I
C
= 20mA,
f = 100MHz
V
CE
= 10V, I
C
= 100μA,
R
S
= 1.0kΩ, f = 1.0kHz
V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= - 0.5V, I
B1
= 15mA
V
CC
= 3.0V, I
C
= 150mA, I
B1
= 15mA,
V
BE(OFF)
= 0.5V
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
V
CC
= 30V, I
C
= 150mA, I
B1
= I
B2
= 15mA
DC Current Gain
h
FE
⎯
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
V
CE(sat)
V
BE(sat)
C
obo
C
ibo
f
T
NF
V
V
pF
pF
MHz
dB
t
d
t
r
t
s
t
f
⎯
⎯
⎯
⎯
10
25
225
60
ns
ns
ns
ns
10. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%.
MMBT2222A
Document number: DS30041 Rev. 13 - 2
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August 2012
© Diodes Incorporated
MMBT2222A
1,000
0.5
I
C
I
B
= 10
V
CE(SAT)
, COLLECTOR -EMITTER
SATURATION VOLTAGE (V)
T
A
= 125°C
0.4
T
A
= 25°C
h
FE
, DC CURRENT GAIN
100
T
A
= -25°C
T
A
= 25°C
0.3
T
A
= 150°C
0.2
10
0.1
T
A
= -50°C
V
CE
= 1.0V
1
1,000
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current
0.1
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
Figure 3 Base-Emitter Turn-On Voltage
vs. Collector Current
100
V
CE
= 5V
T
A
= -50°C
1
0
1,000
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1
35
f = 1MHz
30
25
T
A
= 25°C
CAPACITANCE (pF)
20
C
ibo
15
10
5
0
0
8 10 12 14 16 18 20
6
V
R
, REVERSE VOLTS (V)
Figure 4 Typical Capacitance Characteristics
2
4
C
obo
T
A
= 150°C
1,000
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.1
10
100
1
I
B
, BASE CURRENT (mA)
Figure 6 Typical Collector Saturation Region
0.01
I
C
= 300mA
I
C
= 30mA
I
C
= 1mA
I
C
= 10mA
I
C
= 100mA
100
10
1
1
10
I
C
, COLLECTOR CURRENT (mA)
Figure 5 Typical Gain Bandwidth Product
vs. Collector Current
100
MMBT2222A
Document number: DS30041 Rev. 13 - 2
5 of 7
www.diodes.com
August 2012
© Diodes Incorporated
