Plastic-Encapsulate Transistors
FEATURES
Switching transistor
MMBT4401
(NPN)
Marking:2X
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
60
40
6
600
300
150
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
P
C
T
J
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
VCBO
VCEO
VEBO
ICB
O
ICE
O
IEB
O
hF
E
VCE(sat)
VBE(sat)
fT
Test
conditions
Min
60
40
6
Max
Unit
V
V
V
IC= 100μA, IE=0
IC= 1mA, IB=0
IE= 100μA, IC=0
VCB=50 V, IE=0
VCE=30 V, IB=0
VEB=5V, IC=0
VCE=1V, IC=150mA
IC=150mA, IB=15mA
IC= 150mA, IB=15mA
VCE= 10V, IC= 20mA
f = 100MHz
0.1
0.1
0.1
100
300
0.4
0.95
μA
μA
μA
V
V
Transition frequency
250
MHz
MAKO Semiconductor Co., Limited
4008-378-873
http://www.makosemi.hk/
Page:P2-P1
Plastic-Encapsulate Transistors
MMBT4401
Typical
Characteristics
MAKO Semiconductor Co., Limited
4008-378-873
http://www.makosemi.hk/
Page:P2-P2
