Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking (See Page 2): 2T
Ordering & Date Code Information: See Page 2
Weight: 0.002 grams (approx.)
J
G
H
J
K
L
M
N
a
D
L
C
All Dimensions in mm
B
E
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
T
j
, T
STG
Value
-40
-40
-5.0
-600
150
833
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30273 Rev. 7 - 2
1 of 4
www.diodes.com
MMBT4403T
ã
Diodes Incorporated
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
Min
-40
-40
-5.0
¾
¾
30
60
100
100
20
¾
-0.75
¾
¾
¾
1.5
0.1
60
1.0
200
Max
¾
¾
¾
-100
-100
¾
¾
¾
300
¾
-0.40
-0.75
-0.95
-1.30
8.5
30
15
8.0
500
100
¾
Unit
V
V
V
nA
nA
Test Condition
I
C
= -100mA, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -100mA, I
C
= 0
V
CE
= -35V, V
EB(OFF)
= -0.4V
V
CE
= -35V, V
EB(OFF)
= -0.4V
I
C
= -100µA, V
CE
=
I
C
= -1.0mA, V
CE
=
I
C
= -10mA, V
CE
=
I
C
= -150mA, V
CE
=
I
C
= -500mA, V
CE
=
-1.0V
-1.0V
-1.0V
-2.0V
-2.0V
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
¾
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
V
CE(SAT)
V
BE(SAT)
V
V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
V
CB
= -10V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
C
cb
C
eb
h
ie
h
re
h
fe
h
oe
f
T
pF
pF
kW
x 10
-4
¾
mS
MHz
V
CE
= -10V, I
C
= -1.0mA,
f = 1.0kHz
V
CE
= -10V, I
C
= -20mA,
f = 100MHz
t
d
t
r
t
s
t
f
¾
¾
¾
¾
15
20
225
30
ns
ns
ns
ns
V
CC
= -30V, I
C
= -150mA,
V
BE(off)
= -2.0V, I
B1
= -15mA
V
CC
= -30V, I
C
= -150mA,
I
B1
= I
B2
= -15mA
Ordering Information
(Note 4)
Device
MMBT4403T-7-F
Notes:
Packaging
SOT-523
Shipping
3000/Tape & Reel
3. Short duration pulse test used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
2T = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
2TYM
Date Code Key
Year
Code
Month
Code
Jan
1
Feb
2
2002
N
March
3
2003
P
Apr
4
2004
R
May
5
Jun
6
2005
S
Jul
7
2006
T
Aug
8
Sep
9
2007
U
Oct
O
2008
V
Nov
N
2009
W
Dec
D
DS30273 Rev. 7 - 2
2 of 4
www.diodes.com
MMBT4403T
200
30
20
Cibo
NEW PRODUCT
P
d
, POWER DISSIPATION (mW)
150
CAPACITANCE (pF)
100
10
50
5.0
Cobo
0
0
100
200
T
A
, AMBIENT TEMPERATURE (ºC)
Fig. 1 Power Derating Curve, Total Package
1.0
-0.1
-1.0
-10
-30
REVERSE VOLTS (V)
Fig. 2 Typical Capacitance
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
I
C
= 1mA
I
C
= 30mA
I
C
= 10mA
I
C
= 100mA
I
C
= 300mA
0.01
0.1
1
10
100
I
B
, BASE CURRENT (mA)
Fig. 3 Typical Collector Saturation Region
1.0
V
BE(ON)
, BASE EMITTER VOLTAGE (V)
0.5
V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
I
C
I
B
= 10
0.4
T
A
= 25°C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
T
A
= 150°C
T
A
= -50°C
T
A
= 25°C
V
CE
= 5V
0.3
0.2
T
A
= 150°C
0.1
T
A
= 50°C
0
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Collector Emitter Saturation Voltage
vs. Collector Current
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Base-Emitter Voltage
vs. Collector Current
DS30273 Rev. 7 - 2
3 of 4
www.diodes.com
MMBT4403T
1000
V
CE
= 5V
1000
NEW PRODUCT
T
A
= 150°C
T
A
= 25°C
100
T
A
= -50°C
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
h
FE
, DC CURRENT GAIN
100
10
10
1
1
10
1000
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 DC Current Gain vs. Collector Current
1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at
www.diodes.com
are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the express written approval of Diodes Incorporated.
