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MMBZ5232BLT3G

Zener Diodes 5.6V 225mW

器件类别:分立半导体    二极管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
零件包装代码
SOT-23
包装说明
R-PDSO-G3
针数
3
制造商包装代码
318-08
Reach Compliance Code
compliant
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
11 Ω
JEDEC-95代码
TO-236AB
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
3
最高工作温度
150 °C
最低工作温度
-65 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性
UNIDIRECTIONAL
最大功率耗散
0.225 W
认证状态
Not Qualified
标称参考电压
5.6 V
表面贴装
YES
技术
ZENER
端子面层
Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
最大电压容差
5%
工作测试电流
20 mA
文档预览
MMBZ52xxBLT1G Series,
SZMMBZ52xxBLT1G Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Features
http://onsemi.com
225 mW Rating on FR−4 or FR−5 Board
Zener Voltage Range
2.4 V to 91 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 KV) per Human Body Model
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
SOT−23
CASE 318
STYLE 8
3
Cathode
1
Anode
MARKING DIAGRAM
xxx
G
G
M
260°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Total Power Dissipation on FR−5 Board,
(Note 1) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Power Dissipation on Alumina
Substrate, (Note 2) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
P
D
Max
225
1.8
556
Units
mW
mW/°C
°C/W
xxx
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MMBZ52xxBLT1G
Package
SOT−23
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
10,000 /
Tape & Reel
R
qJA
P
D
SZMMBZ52xxBLT1G SOT−23
(Pb−Free)
MMBZ52xxBLT3G
SOT−23
(Pb−Free)
300
2.4
417
−65
to +150
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
SZMMBZ52xxBLT3G SOT−23
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
March, 2013
Rev. 12
1
Publication Order Number:
MMBZ5221BLT1/D
MMBZ52xxBLT1G Series, SZMMBZ52xxBLT1G Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
A
= 25°C
unless otherwise noted, V
F
= 0.95 V Max. @ I
F
= 10 mA)
Symbol
V
Z
I
ZT
Z
ZT
I
ZK
Z
ZK
I
R
V
R
I
F
V
F
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
V
Z
V
R
I
R
V
F
I
ZT
V
I
I
F
Zener Voltage Regulator
http://onsemi.com
2
MMBZ52xxBLT1G Series, SZMMBZ52xxBLT1G Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-NC, 3-Cathode) (V
F
= 0.9 V Max @ I
F
= 10 mA for all types.)
Zener Voltage
(Note 3)
Device
Marking
18A
18B
18C
18D
18E
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
8M
8N
8P
8Q
8R
8S
8T
8U
8V
8W
8X
8Y
8Z
81A
81B
81C
81D
81E
81F
81G
81H
81J
81K
81L
81M
81N
81P
81Q
81R
81S
81T
81U
81W
V
Z
(Volts)
Min
2.28
2.37
2.56
2.66
2.85
3.13
3.42
3.70
4.08
4.46
4.84
5.32
5.70
5.89
6.46
7.12
7.79
8.26
8.64
9.50
10.4
11.40
12.35
13.30
14.25
15.20
16.15
17.10
18.05
19.00
20.90
22.80
23.75
25.65
26.60
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
57.00
58.90
64.60
71.25
77.90
86.45
Nom
2.4
2.5
2.7
2.8
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
82
91
Max
2.52
2.63
2.84
2.94
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.30
6.51
7.14
7.88
8.61
9.14
9.56
10.50
11.55
12.60
13.65
14.70
15.75
16.80
17.85
18.90
19.95
21.00
23.10
25.20
26.25
28.35
29.40
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
63.00
65.10
71.40
78.75
86.10
95.55
@ I
ZT
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
8.5
7.8
7.4
7
6.6
6.2
5.6
5.2
5
4.6
4.5
4.2
3.8
3.4
3.2
3
2.7
2.5
2.2
2.1
2
1.8
1.7
1.5
1.4
W
30
30
30
30
29
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
170
185
230
270
330
400
Zener Impedance
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
W
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
1400
1400
1600
1700
2000
2300
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Leakage Current
I
R
@ V
R
mA
100
100
75
75
50
25
15
10
5
5
5
5
5
5
3
3
3
3
3
3
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Volts
1
1
1
1
1
1
1
1
1
2
2
3
3.5
4
5
6
6.5
6.5
7
8
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
52
56
62
69
Device*
MMBZ5221BLT1G
MMBZ5222BLT1G
MMBZ5223BLT1G
MMBZ5224BLT1G
MMBZ5225BLT1G
MMBZ5226BLT1G
MMBZ5227BLT1G
MMBZ5228BLT1G
MMBZ5229BLT1G
MMBZ5230BLT1G
MMBZ5231BLT1G/T3G
MMBZ5232BLT1G/T3G
MMBZ5233BLT1G
MMBZ5234BLT1G/T3G
MMBZ5235BLT1G
MMBZ5236BLT1G
MMBZ5237BLT1G
MMBZ5238BLT1G
MMBZ5239BLT1G
MMBZ5240BLT1G
MMBZ5241BLT1G/T3G
MMBZ5242BLT1G/T3G
MMBZ5243BLT1G
MMBZ5244BLT1G
MMBZ5245BLT1G
MMBZ5246BLT1G
MMBZ5247BLT1G/T3G
MMBZ5248BLT1G/T3G
MMBZ5249BLT1G
MMBZ5250BLT1G/T3G
MMBZ5251BLT1G
MMBZ5252BLT1G
MMBZ5253BLT1G
MMBZ5254BLT1G
MMBZ5255BLT1G
MMBZ5256BLT1G
MMBZ5257BLT1G/T3G
MMBZ5258BLT1G
MMBZ5259BLT1G
MMBZ5260BLT1G
MMBZ5261BLT1G/T3G
MMBZ5262BLT1G
MMBZ5263BLT1G
MMBZ5264BLT1G
MMBZ5265BLT1G
MMBZ5266BLT1G
MMBZ5267BLT1G
MMBZ5268BLT1G
MMBZ5270BLT1G
3. Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25°C
NOTE: MMBZ5233BLT1G, MMBZ5246BLT1G, MMBZ5251BLT1G, and MMBZ5252BLT1G Not Available in 10,000/Tape & Reel.
*Include SZ-prefix devices where applicable.
http://onsemi.com
3
MMBZ52xxBLT1G Series, SZMMBZ52xxBLT1G Series
TYPICAL CHARACTERISTICS
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C)
8
7
6
5
4
3
2
1
0
-1
-2
-3
V
Z
@ I
ZT
TYPICAL T
C
VALUES
FOR MMBZ52xxBLT1G SERIES
100
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C)
TYPICAL T
C
VALUES
FOR MMBZ52xxBLT1G SERIES
V
Z
@ I
ZT
10
2
3
4
5
6
7
8
9
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
11
12
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
Figure 1. Temperature Coefficients
(Temperature Range
55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range
55°C to +150°C)
1000
Z ZT, DYNAMIC IMPEDANCE (
Ω
)
T
J
= 25°C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
1000
IF, FORWARD CURRENT (mA)
75 V (MMBZ5267BLT1G)
91 V (MMBZ5270BLT1G)
I
Z
= 1 mA
100
5 mA
20 mA
10
100
10
150°C
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE
100
1
0.4
0.5
75°C
25°C
0°C
1.1
1.2
0.6
0.7
0.8
0.9
1.0
V
F
, FORWARD VOLTAGE (V)
Figure 3. Effect of Zener Voltage on
Zener Impedance
Figure 4. Typical Forward Voltage
http://onsemi.com
4
MMBZ52xxBLT1G Series, SZMMBZ52xxBLT1G Series
TYPICAL CHARACTERISTICS
1000
I R , LEAKAGE CURRENT (
μ
A)
0 V BIAS
1 V BIAS
C, CAPACITANCE (pF)
100
BIAS AT
50% OF V
Z
NOM
10
T
A
= 25°C
1000
100
10
1
0.1
0.01
+ 25°C
−55°C
0
10
20
30
40
50
60
70
V
Z
, NOMINAL ZENER VOLTAGE (V)
80
90
+150°C
0.001
0.0001
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
0.00001
Figure 5. Typical Capacitance
Figure 6. Typical Leakage Current
100
T
A
= 25°C
I Z , ZENER CURRENT (mA)
I Z , ZENER CURRENT (mA)
10
100
T
A
= 25°C
10
1
1
0.1
0.1
0.01
0
2
4
6
8
V
Z
, ZENER VOLTAGE (V)
10
12
0.01
10
30
50
70
V
Z
, ZENER VOLTAGE (V)
90
Figure 7. Zener Voltage versus Zener Current
(V
Z
Up to 12 V)
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
http://onsemi.com
5
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器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
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