Freescale Semiconductor
Technical Data
Document Number: MMG3005NT1
Rev. 9, 10/2014
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3005NT1 is a general purpose amplifier that is internally
prematched and designed for a broad range of Class A, small--signal, high
linearity, general purpose applications. It is suitable for applications with
frequencies from 800 to 2200 MHz such as cellular, PCS, WLL, PHS,
VHF, UHF, UMTS and general small--signal RF.
Features
Frequency: 800--2200 MHz
P1dB: 30 dBm @ 2140 MHz
Small--Signal Gain: 15 dB @ 2140 MHz
Third Order Output Intercept Point: 47 dBm @ 2140 MHz
Single 5 V Supply
Internally Prematched to 50 Ohms
In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 13--inch Reel.
MMG3005NT1
800-
-2200 MHz, 15 dB
30 dBm
InGaP HBT GPA
PQFN 5
5
Table 1. Typical Performance
(1)
Characteristic
Small--Signal Gain
(S21)
Input Return Loss
(S11)
Output Return Loss
(S22)
Power Output @1dB
Compression
Third Order Output
Intercept Point
Symbol
G
p
IRL
ORL
P1db
OIP3
900
MHz
18.5
--14
--12
30
47
1960
MHz
15.5
--10
--7
30
47
2140
MHz
15
--11
--7
30
47
Unit
dB
dB
dB
dBm
dBm
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
Symbol
V
DC
I
DC
P
in
T
stg
T
J
Value
6
600
18
--65 to +150
150
Unit
V
mA
dBm
C
C
1. V
DC
= 5 Vdc, T
A
= 25C, 50 ohm system, application circuit
tuned for specified frequency.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 100C, 5 Vdc, 480 mA, no RF applied
Symbol
R
JC
Value
(2)
21.5
Unit
C/W
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2005--2011, 2014. All rights reserved.
MMG3005NT1
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(V
DC
= 5 Vdc, 2140 MHz, T
A
= 25C, 50 ohm system, in Freescale Application Circuit)
Characteristic
Small--Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Power Output @ 1dB Compression
Third Order Output Intercept Point
Noise Figure
Supply Current
Supply Voltage
Symbol
G
p
IRL
ORL
P1dB
OIP3
NF
I
DC
V
DC
Min
14
—
—
—
—
—
420
—
Typ
15
--11
--7
30
47
5
480
5
Max
—
—
—
—
—
—
520
—
Unit
dB
dB
dB
dBm
dBm
dB
mA
V
Table 5. Functional Pin Description
Name
RF
in
RF
out
/
V
CC
V
CC
V
BA
GND
Pin
Number
3, 4
10, 11, 12
14
16
Backside
Center
Metal
Description
RF input for the power amplifier. This pin is DC--coupled and
requires a DC--blocking series capacitor.
RF output for the power amplifier. This pin is DC--coupled
and requires a DC--blocking series capacitor.
Collector voltage supply.
Bias voltage supply.
The center metal base of the PQFN package provides both
DC and RF ground as well as heat sink contact for the
power amplifier.
1
2
3
4
5
6
7
(Top View)
8
V
BA
N.C. V
CC
16 15 14
13
12
11
10
9
N.C.
N.C.
RF
in
RF
in
N.C.
N.C.
RF
out
/V
CC
RF
out
/V
CC
RF
out
/V
CC
N.C.
N.C. N.C. N.C.
Figure 1. Pin Connections
Table 6. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD 22--A114)
Machine Model (per EIA/JESD 22--A115)
Charge Device Model (per JESD 22--C101)
Class
1A
A
IV
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
C
MMG3005NT1
2
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
600
I
CC
, COLLECTOR CURRENT (mA)
480
360
240
120
V
CC
= 5 Vdc
0
0
1
2
3
4
5
V
BA
, BIAS VOLTAGE (V)
N.C.
N.C.
RF
in
RF
in
N.C.
1
2
3
4
5
6
7
(Top View)
8
V
BA
N.C. V
CC
16 15 14
13
12
11
10
9
N.C.
RF
out
/V
CC
RF
out
/V
CC
RF
out
/V
CC
N.C.
N.C. N.C. N.C.
Pin Connections
Figure 2. Collector Current versus Bias Voltage
at Pin 16
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
55
50
45
40
35
30
25
20
5
10
15
20
25
30
P
out
, OUTPUT POWER (dBm)
NOTE: Supply current is varied under external resistor control. Peak power
is not reduced at any listed current. Similar results can be obtained for other
frequency bands.
V
DC
= 5 Vdc
f
1
= 2140 MHz
f
2
= 2141 MHz
400 mA
I
DC
= 480 mA
320 mA
MTTF (YEARS)
10
6
10
5
10
4
10
3
120
125
130
135
140
145
150
T
J
, JUNCTION TEMPERATURE (C)
NOTE: The MTTF is calculated with V
DC
= 5 Vdc, I
DC
= 480 mA
Figure 4. MTTF versus Junction Temperature
Figure 3. Third Order Output Intercept Point
versus Output Power and Supply Current
MMG3005NT1
RF Device Data
Freescale Semiconductor
3
50 OHM APPLICATION CIRCUIT: 900 MHz
V
SUPPLY
R2
R1
C3
C4
1
16
15
14
13
12
11
DUT
6
7
8
10
9
Z4
Z5
PCB
Z4
L1
Z5
C5
C6
RF
INPUT
Z1
C1
Z2
Z3
C7
2
3
4
5
Current Mirror
Z6
C8
C2
Z7
RF
OUTPUT
Z1, Z7
Z2, Z6
Z3
0.140 x 0.028 Microstrip
0.057 x 0.028 Microstrip
0.342 x 0.028 Microstrip
0.119 x 0.028 Microstrip
0.223 x 0.028 Microstrip
Isola FR408, 0.014,
r
= 3.7
Figure 5. 50 Ohm Test Circuit Schematic
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
C1, C2
C3, C5
C4, C6
C7
C8
L1
R1
R2
Description
15 pF Chip Capacitors
0.01
F
Chip Capacitors
0.1
F
Chip Capacitors
6.8 pF Chip Capacitor
5.6 pF Chip Capacitor
15 nH Chip Inductor
33
Ω,
1/10 W Chip Resistor
0
Ω,
1/10 W Chip Resistor
Part Number
ECUV1H150JCV
C0603C103J5RAC
C0603C104J5RAC
06035J6R8BS
06035J5R6BS
1008CS--150XJB
CRCW060333R0FKEA
CRCW06030000FKEA
Manufacturer
Panasonic
Kemet
Kemet
AVX
AVX
Coilcraft
Vishay
Vishay
MMG3005NT1
4
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 900 MHz
V
BA
V
SUPPLY
R2
R1
C3
C4
RF
in
C5
C6
L1
RF
out
C1
C7
C8
C2
MMG3004/5 Rev 3
Figure 6. 50 Ohm Test Circuit Component Layout
MMG3005NT1
RF Device Data
Freescale Semiconductor
5
