Freescale Semiconductor
Technical Data
Document Number: MMG3014NT1
Rev. 5, 3/2016
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3014NT1 is a general purpose amplifier that is input and output
internally prematc hed. It is designed for a broad range of Clas s A,
small--signal, high linearity, general purpose applications. It is suitable for
applications with frequencies from 40 to 4000 MHz such as cellular, PCS,
BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.
Features
Frequency: 40--4000 MHz
P1dB: 25 dBm @ 900 MHz
Small--Signal Gain: 19.5 dB @ 900 MHz
Third Order Output Intercept Point: 40.5 dBm @ 900 MHz
Single 5 V Supply
Active Bias
Cost--effective SOT--89 Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
MMG3014NT1
40-
-4000 MHz, 19.5 dB
25 dBm
InGaP HBT GPA
SOT-
-89
Table 1. Typical Performance
(1)
Characteristic
Small--Signal Gain
(S21)
Input Return Loss
(S11)
Output Return Loss
(S22)
Power Output @1dB
Compression
Third Order Output
Intercept Point
Symbol
G
p
IRL
ORL
P1dB
OIP3
900
MHz
19.5
--25
--11
25
40.5
2140
MHz
15
--12
--13
25.8
40.5
3500
MHz
10
--8
--19
25
40
Unit
dB
dB
dB
dBm
dBm
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
Symbol
V
CC
I
CC
P
in
T
stg
T
J
Value
6
300
25
--65 to +150
175
Unit
V
mA
dBm
C
C
1. V
CC
= 5 Vdc, T
A
= 25C, 50 ohm system, application circuit
tuned for specified frequency.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81C, 5 Vdc, 135 mA, no RF applied
Symbol
R
JC
Value
(2)
27.4
Unit
C/W
2. Refer to AN1955,Thermal
Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
Freescale Semiconductor, Inc., 2008, 2011, 2014, 2016. All rights reserved.
MMG3014NT1
1
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(V
CC
= 5 Vdc, 900 MHz, T
A
= 25C, 50 ohm system, in Freescale Application Circuit)
Characteristic
Small--Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Power Output @ 1dB Compression
Third Order Output Intercept Point
Noise Figure
Supply Current
Supply Voltage
Symbol
G
p
IRL
ORL
P1dB
OIP3
NF
I
CC
V
CC
Min
18.5
—
—
—
—
—
110
—
Typ
19.5
--25
--11
25
40.5
5.7
135
5
Max
—
—
—
—
—
—
160
—
Unit
dB
dB
dB
dBm
dBm
dB
mA
V
Table 5. Functional Pin Description
Pin
Number
1
2
3
RF
in
Ground
RF
out
/DC Supply
1
2
3
2
Pin Function
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Conditions/Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B
A
IV
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
1
Package Peak Temperature
260
Unit
C
MMG3014NT1
2
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS
25
G
p
, SMALL--SIGNAL GAIN (dB)
0
20
S11, S22 (dB)
S11
--5
S22
15
T
C
= --40C
10
V
CC
= 5 Vdc
5
0
1
2
f, FREQUENCY (GHz)
3
4
85C
25C
V
CC
= 5 Vdc
--10
0
1
2
f, FREQUENCY (GHz)
3
4
Figure 2. Small-
-Signal Gain (S21) versus
Frequency
23
21
G
p
, SMALL--SIGNAL GAIN (dB)
19
17
15
13
11
9
6
10
3500 MHz
14
18
22
26
1960 MHz
2140 MHz
2600 MHz
P1dB, 1 dB COMPRESSION POINT (dBm)
V
CC
= 5 Vdc
900 MHz
26
Figure 3. Input/Output Return Loss versus
Frequency
25
V
CC
= 5 Vdc
24
0.5
1
1.5
2
2.5
3
3.5
f, FREQUENCY (GHz)
P
out
, OUTPUT POWER (dBm)
Figure 4. Small-
-Signal Gain versus Output
Power
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
200
180
I
CC
, COLLECTOR CURRENT (mA)
160
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
42
Figure 5. P1dB versus Frequency
40
V
CC
= 5 Vdc
1 MHz Tone Spacing
38
0
1
2
f, FREQUENCY (GHz)
3
4
V
CC
, COLLECTOR VOLTAGE (V)
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
MMG3014NT1
RF Device Data
Freescale Semiconductor, Inc.
3
50 OHM TYPICAL CHARACTERISTICS
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
42
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
42
40
40
38
4.5
f = 900 MHz
1 MHz Tone Spacing
4.7
4.9
5.1
5.3
5.5
38
--40
V
CC
= 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
--20
0
20
40
60
80
100
V
CC
, COLLECTOR VOLTAGE (V)
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
--30
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
--40
--50
--60
--70
--80
V
CC
= 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
10
3
10
13
16
19
22
25
120
MTTF (YEARS)
10
5
Figure 9. Third Order Output Intercept Point
versus Case Temperature
10
4
125
130
135
140
145
150
P
out
, OUTPUT POWER (dBm)
T
J
, JUNCTION TEMPERATURE (C)
NOTE: The MTTF is calculated with V
CC
= 5 Vdc, I
CC
= 135 mA
Figure 10. Third Order Intermodulation versus
Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
--20
--30
--40
--50
--60
--70
10
Figure 11. MTTF versus Junction Temperature
10
8
NF, NOISE FIGURE (dB)
6
4
2
V
CC
= 5 Vdc
0
0
1
2
f, FREQUENCY (GHz)
3
4
V
CC
= 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF
13
16
19
22
25
P
out
, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single-
-Carrier W-
-CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3014NT1
4
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 800-
-1000 MHz
V
SUPPLY
R1
C3
L1
RF
INPUT
Z1
Z2
C1
C5
Z1, Z8
Z2, Z7
Z3
Z4
C6
0.274 x 0.058 Microstrip
0.073 x 0.058 Microstrip
0.066 x 0.058 Microstrip
0.509 x 0.058 Microstrip
Z5
Z6
PCB
Z3
Z4
DUT
V
CC
Z5
Z6
C2
C4
RF
OUTPUT
Z7
Z8
C7
0.172 x 0.058 Microstrip
0.403 x 0.058 Microstrip
Getek Grade ML200C, 0.031,
r
= 4.1
Figure 14. 50 Ohm Test Circuit Schematic
30
20
10
S21, S11, S22 (dB)
0
--10
--20
--30
--40
700
S11
V
CC
= 5 Vdc
800
900
f, FREQUENCY (MHz)
1000
1100
MMG30XX
Rev 2
S22
C5
C1
C6
L1
S21
R1
C4
C3
C2
C7
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
C1, C2
C3
C4
C5
C6
C7
L1
R1
Description
220 pF Chip Capacitors
0.1
F
Chip Capacitor
2.2
F
Chip Capacitor
0.2 pF Chip Capacitor
4.7 pF Chip Capacitor
1.8 pF Chip Capacitor
10 nH Chip Inductor
0
Chip Resistor
Part Number
C0805C221J5GAC
C0603C104J5RAC
C0805C225J4RAC
12065J0R2BS
C0603C479J5GAC
C1206C189D5GAC
HK160810NJ--T
ERJ3GEY0R00V
Manufacturer
Kemet
Kemet
Kemet
AVX
Kemet
Kemet
Taiyo Yuden
Panasonic
MMG3014NT1
RF Device Data
Freescale Semiconductor, Inc.
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