MMST3906
PNP Silicon Epitaxial Planar Transistor
SOT-323
Features
Power dissipation.(P
C
=200mW)
Epitaxial planar die construction.
Complementary to MMST3904.
Also available in lead free version.
Applications
General purpose application and switching application.
Dimensions in inches and (millimeters)
Ordering Information
Type No.
MMST3906
Marking
K5N
Package Code
SOT-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
Parameter
Collector-Base Voltage
Value
-40
Units
V
V
CEO
V
EBO
I
C
Collector-Emitter Voltage
-40
V
Emitter-Base Voltage
-5
V
Collector Current -Continuous
-200
mA
P
C
T
j,
T
stg
Collector Dissipation
200
mW
℃
Junction and Storage Temperature
-55~150
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Revision:20170701-P1
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t
p
:
//
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MMST3906
PNP Silicon Epitaxial Planar Transistor
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Test conditions
I
C
=-10μA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-10μA,I
C
=0
V
CB
=-30V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-1V,I
C
=-0.1mA
V
CE
=-1V,I
C
=-1mA
V
CE
=-1V,I
C
=-10mA
V
CE
=-1V,I
C
=-50mA
V
CE
=-1V,I
C
=-100mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-20V,I
C
= -10mA,
f=100MHz
V
CB
=-5V,I
E
=0,f=1MHz
V
CB
=-5V,I
E
=0,f=1MHz
V
CE
=-5V,I
C
=-0.1mA,
f=1KHz,R
s
=1KΩ
V
CC
=-3V,V
BE
=-0.5V,
I
C
=-10mA,I
B1
=-1mA
MIN
-40
-40
-5
TYP MAX
UNIT
V
V
V
-0.05
-0.05
60
80
100
60
30
μA
μA
DC current gain
h
FE
300
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector input capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
C
obo
C
iob
NF
t
d
t
r
t
s
t
f
-0.25
-0.4
-0.65
-0.85
-0.95
V
V
MHz
250
4.5
10
4
35
35
225
75
pF
pF
dB
nS
nS
nS
nS
V
CC
=-3V,I
C
=-10mA,
I
B1
=I
B2
=-1mA
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Revision:20170701-P1
ht
t
p
:
//
www.lgesem i
.c
o
m
mail:lge@lgesemi.com
MMST3906
PNP Silicon Epitaxial Planar Transistor
Revision:20170701-P1
ht
t
p
:
//
www.lgesem i
.c
o
m
mail:lge@lgesemi.com
RF/无线
