MMSZ4681-V to MMSZ4717-V
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon planar Zener diodes
• Standard Zener voltage tolerance is ± 5 %.
e3
• High temperature soldering guaranteed:
260 °C/4x10 s set terminals
• These diodes are also available in DO35 case with
the type designation 1N4681...1N4717 and
SOT23 case with the type designation
MMBZ4681-V... MMBZ4717-V
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
17431
Mechanical Data
Case:
SOD123 plastic case
Weight:
approx. 9.3 mg
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/3K per 7" reel (8 mm tape), 15K/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Zener current (see Table "Characteristics")
Power dissipation
T
L
= 75 °C
P
tot
500
1)
mW
Test conditions
Symbol
Value
Unit
Note
1)
On FR - 4 or FR - 5 board with minimum recommended solder pad layout
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Maximum junction temperature
Storage temperature range
Note
1)
On FR - 4 or FR - 5 board with minimum recommended solder pad layout
Test conditions
Symbol
R
thJA
T
j
T
stg
Value
340
1)
Unit
K/W
°C
°C
150
- 55 to + 150
Document Number 85773
Rev. 1.7, 16-Jul-08
For technical support, please contact: Diodes-SSP@vishay.com
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1
MMSZ4681-V to MMSZ4717-V
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Maximum V
F
= 0.9 V at I
F
= 10 mA
Zener voltage
1)
Partnumber
Marking code
V
Z
at I
ZT
= 50 µA
V
typ.
MMSZ4681-V
MMSZ4682-V
MMSZ4683-V
MMSZ4684-V
MMSZ4685-V
MMSZ4686-V
MMSZ4687-V
MMSZ4688-V
MMSZ4689-V
MMSZ4690-V
MMSZ4691-V
MMSZ4692-V
MMSZ4693-V
MMSZ4694-V
MMSZ4695-V
MMSZ4696-V
MMSZ4697-V
MMSZ4698-V
MMSZ4699-V
MMSZ4700-V
MMSZ4701-V
MMSZ4702-V
MMSZ4703-V
MMSZ4704-V
MMSZ4705-V
MMSZ4706-V
MMSZ4707-V
MMSZ4708-V
MMSZ4709-V
MMSZ4710-V
MMSZ4711-V
MMSZ4712-V
MMSZ4713-V
MMSZ4714-V
MMSZ4715-V
MMSZ4716-V
MMSZ4717-V
CF
CH
CJ
CK
CM
CN
CP
CT
CU
CV
CA
CX
CY
CZ
DC
DD
DE
DF
DH
DJ
DK
DM
DN
DP
DT
DU
DV
DA
DZ
DY
EA
EC
ED
EE
EF
EH
EJ
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
min.
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.27
8.65
9.5
10.5
11.4
12.4
13.3
14.3
15.2
16.2
17.1
18.1
19
20.9
22.8
23.8
25.7
26.6
28.5
31.4
34.2
37.1
40.9
max.
2.52
2.84
3.15
3.47
3.78
4.1
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.14
9.56
10.5
11.6
12.6
13.7
14.7
15.8
16.8
17.9
18.9
20
21
23.1
25.2
26.3
28.4
29.4
31.5
34.7
37.8
41
45.2
2
1
0.8
7.5
7.5
5
4
10
10
10
10
10
10
1
1
1
1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
1
1
1
1.5
2
2
2
3
3
4
5
5.1
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.8
10.6
11.4
12.1
12.9
13.6
14.4
15.2
16.7
18.2
19
20.4
21.2
22.8
25
27.3
29.6
32.6
Max. reverse
current
I
R
µA
Test voltage
V
R
V
Note
1)
Measured with device junction in thermal equilibrium
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For technical support, please contact: Diodes-SSP@vishay.com
Document Number 85773
Rev. 1.7, 16-Jul-08
MMSZ4681-V to MMSZ4717-V
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
P
tot
- Total Power Dissipation (mW)
600
500
400
300
200
100
0
0
20850
TK
VZ
- Temperature Coefficient of
V
Z
(10
-4
/K)
15
10
5
I
Z
= 5 mA
0
-5
0
95 9600
20 40 60
80
100 120 140 160
T
amb
- Ambient Temperature (°C)
10
20
40
30
V
Z
- Z-Voltage (V)
50
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
1000
C
D
- Diode Capacitance (pF)
V
Z
-
Voltage
Change (mV)
200
T
j
= 25 °C
150
V
R
= 2
V
T
j
= 25 °C
100
100
I
Z
= 5 mA
10
50
1
0
95 9598
0
5
10
15
20
25
95 9601
0
5
10
15
20
25
V
Z
- Z-Voltage (V)
V
Z
- Z-Voltage (V)
Figure 2. Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
Figure 5. Diode Capacitance vs. Z-Voltage
1.3
V
Ztn
- Relative
Voltage
Change
V
Ztn
=
V
Zt
/V
Z
(25 °C)
100
I
F
- Forward Current (mA)
10
T
j
= 25 °C
1.2
1.1
1.0
0.9
0.8
- 60
TK
VZ
= 10 x 10
-4
/K
8
x 10
-4
/K
6 x 10
-4
/K
4 x 10
-4
/K
2 x 10
-4
/K
1
0
- 2 x 10
-4
/K
- 4 x 10
-4
/K
0.1
0.01
0.001
0
95 9599
60
120
180
T
j
- Junction Temperature (°C)
0
240
0.2
0.4
0.6
0.8
1.0
95 9605
V
F
- Forward
Voltage
(V)
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
Figure 6. Forward Current vs. Forward Voltage
Document Number 85773
Rev. 1.7, 16-Jul-08
For technical support, please contact: Diodes-SSP@vishay.com
www.vishay.com
3
MMSZ4681-V to MMSZ4717-V
Vishay Semiconductors
100
80
I
Z
- Z-Current (mA)
P
tot
= 500 mW
T
amb
= 25 °C
1000
r
Z
- Differential Z-Resistance (Ω)
I
Z
= 1 mA
100
5 mA
60
40
20
0
0
4
10
10 mA
1
T
j
= 25 °C
95 9604
12
6
8
V
Z
- Z-Voltage (V)
20
95 9606
0
5
10
15
20
25
V
Z
- Z-Voltage (V)
Figure 7. Z-Current vs. Z-Voltage
Figure 9. Differential Z-Resistance vs. Z-Voltage
50
40
I
Z
- Z-Current (mA)
P
tot
= 500 mW
T
amb
= 25 °C
30
20
10
0
15
20
25
30
35
95 9607
V
Z
- Z-Voltage (V)
Figure 8. Z-Current vs. Z-Voltage
Z
thp
- Thermal Resistance for Pulse Cond. (KW)
1000
t
P
/T = 0.5
100
t
P
/T = 0.2
Single Pulse
10
t
P
/T = 0.1
t
P
/T = 0.02
i
ZM
= (- V
Z
+ (V
Z2
+ 4r
zj
x T/Z
thp
)
1/2
)/(2r
zj
)
10
0
10
1
t
P
- Pulse Length (ms)
10
2
95 9603
R
thJA
= 300 K/W
T = T
jmax
- T
amb
t
P
/T = 0.01
t
P
/T = 0.05
1
10
-1
Figure 10. Thermal Response
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For technical support, please contact: Diodes-SSP@vishay.com
Document Number 85773
Rev. 1.7, 16-Jul-08
MMSZ4681-V to MMSZ4717-V
Vishay Semiconductors
Package Dimensions
in millimeters (inches)
: SOD123
17432
Document Number 85773
Rev. 1.7, 16-Jul-08
For technical support, please contact: Diodes-SSP@vishay.com
www.vishay.com
5
模拟电子
