MMSZ5221B - MMSZ5263B
Taiwan Semiconductor
500mW, 5% Tolerance SMD Zener Diodes
FEATURES
Wide zener voltage range selection: 2.4V to 51V
V
Z
tolerance selection of ± 5%
Moisture sensitivity level: level 1, per J-STD-020
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
●
●
●
●
KEY PARAMETERS
PARAMETER
V
Z
P
D
V
F
at I
F
=10mA
T
J
Max.
Package
Configuration
VALUE
2.4-51
500
0.9
150
UNIT
V
mW
V
°C
SOD-123F
Single die
APPLICATIONS
● Low voltage stabilizers or voltage references
● Adapters
● On-board DC/DC converter
MECHANICAL DATA
●
●
●
●
●
Case: SOD-123F
Molding compound meets UL 94 V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Polarity: Indicated by cathode band
Weight: 8.85 ± 0.5mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage @ I
F
=10mA
Power dissipation
Junction temperature range
Storage temperature range
SYMBOL
V
F
P
D
T
J
T
STG
VALUE
0.9
500
-65 to +150
-65 to +150
UNIT
V
mW
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
TYP
330
UNIT
°C/W
1
Version: F1804
MMSZ5221B - MMSZ5263B
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
ZENER VOLTAGE
PART
NUMBER
MARKING
CODE
Min.
MMSZ5221B
MMSZ5225B
MMSZ5226B
MMSZ5227B
MMSZ5228B
MMSZ5229B
MMSZ5230B
MMSZ5231B
MMSZ5232B
MMSZ5234B
MMSZ5235B
MMSZ5236B
MMSZ5237B
MMSZ5239B
MMSZ5240B
MMSZ5241B
MMSZ5242B
MMSZ5243B
MMSZ5245B
MMSZ5246B
MMSZ5248B
MMSZ5250B
MMSZ5251B
MMSZ5252B
MMSZ5254B
MMSZ5256B
MMSZ5257B
MMSZ5258B
MMSZ5259B
MMSZ5260B
MMSZ5261B
MMSZ5262B
Z2V4
Z3V0
Z3V3
Z3V6
Z3V9
Z4V3
Z4V7
Z5V1
Z5V6
Z6V2
Z6V8
Z7V5
Z8V2
Z9V1
Z10V
Z11V
Z12V
Z13V
Z15V
Z16V
Z18V
Z20V
Z22V
Z24V
Z27V
Z30V
Z33V
Z36V
Z39V
Z43V
Z47V
Z51V
2.28
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
V
Z
@ I
ZT
V
Nom.
2.4
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
Max.
2.52
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
8.5
7.8
7.0
6.2
5.6
5.2
4.6
4.2
3.8
3.4
3.2
3.0
2.7
2.5
TEST
CURRENT
I
ZT
mA
REGULAR
IMPEDANCE
Z
ZT
@ I
ZT
Ω
Max.
30
29
28
24
23
22
19
17
11
7
5
6
8
10
17
22
30
13
16
17
21
25
29
33
41
49
58
70
80
93
105
125
Z
ZK
@ I
ZK
Ω
Max.
1200
1600
1600
1700
1900
2000
1900
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
TEST
CURRENT
I
ZK
mA
LEAKAGE
CURRENT
I
R
@ V
R
µA
Max.
100
50
25
15
10
5
5
5
5
5
3
3
3
3
3
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1
1
1
1
1
1
2
2
3
4
5
6
6.5
7
8
8.4
9.1
9.9
11
12
14
15
17
18
21
23
25
27
30
33
36
39
V
2
Version: F1804
MMSZ5221B - MMSZ5263B
Taiwan Semiconductor
Notes:
1. The zener voltage (V
Z
) is tested under pulse condition of 30ms.
2. The device numbers listed have a standard tolerance on the normal zener voltage of ±5%.
3. For detailed information on price, availability and delivery of normal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current
having a rms value equal to 10% of the DC zener current(I
ZT
or I
ZK
) is superimposed to I
ZT
or I
ZK
.
ORDERING INFORMATION
PART NO.
(Note 1)
MMSZ52xxB RHG
MMSZ52xxB RH
PACKAGE
SOD-123F
SOD-123F
PACKING
3K / 7" Reel
3K / 7" Reel
Note:
1. "xxx" defines voltage from 2.4V (MMSZ5221B) to 51V (MMSZ5262B)
3
Version: F1804
MMSZ5221B - MMSZ5263B
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Typical Forward Voltage
1000
100
Fig. 2 Zener Breakdown Characteristics
Forward Current (mA)
T
A
=25
o
C
100
Zener Current (mA)
10
T
A
=25
o
C
1
10
0.1
1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.01
0
1
2
3
4
5
6
7
8
9
10 11 12
Zener Voltage (V)
Forward Voltage (V)
Fig. 3 Zener Breakdown Characteristics
Fig.4 Admissible Dissipation VS.
Ambient Temperature
100
T
A
=25
o
C
10
Power Dissipation (mW)
10
20
30
40
50
60
70
80
Zener Current (mA)
700
600
500
400
300
200
100
1
0.1
0.01
0
0
50
100
150
200
Zener Voltage (V)
Ambient Temperature (
o
C)
4
Version: F1804
MMSZ5221B - MMSZ5263B
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Typical Capacitance
1000
T
A
=25
o
C
Dynamic Impedence(Ohm)
I
Z
=1mA
100
I
Z
=5mA
Capacitance (pF)
Fig.6 Effect of Zener Voltage on Impedence
1000
100
1V Bias
10
Bias at 50%
of V
Z
(Nom)
10
I
Z
=20mA
1
1
10
Zener Voltage (V)
100
1
1
10
Zener Voltage (V)
100
5
Version: F1804
