MOC205M, MOC206M, MOC207M, MOC208M — Small Outline Optocouplers Transistor Output
April 2009
MOC205M, MOC206M, MOC207M, MOC208M
Small Outline Optocouplers Transistor Output
Features
■
U.L. recognized (File #E90700, Volume 2)
■
VDE recognized (File #136616)
■
■
■
■
■
■
Description
These devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon
phototransistor detector, in a surface mountable, small
outline, plastic package. They are ideally suited for high
density applications, and eliminate the need for through-
the-board mounting.
(add option “V” for VDE approval, i.e, MOC205VM)
Closely matched current transfer ratios
Convenient plastic SOIC-8 surface mountable
package style
Minimum BV
CEO
of 70 Volts guaranteed
Standard SOIC-8 footprint, with 0.050" lead spacing
Compatible with dual wave, vapor phase and
IR reflow soldering
High input-output isolation of 2500 V
AC(rms)
guaranteed
Applications
■
Feedback control circuits
■
Interfacing and coupling systems of different
potentials and impedances
■
General purpose switching circuits
■
Monitor and detection circuits
Schematic
ANODE
1
8
N/C
CATHODE
2
7
BASE
N/C
3
6
COLLECTOR
N/C
4
5
EMITTER
©2005 Fairchild Semiconductor Corporation
MOC205M, MOC206M, MOC207M, MOC208M Rev. 1.0.1
www.fairchildsemi.com
MOC205M, MOC206M, MOC207M, MOC208M — Small Outline Optocouplers Transistor Output
Absolute Maximum Ratings
(T
A
= 25°C Unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
EMITTER
I
F
I
F
(pk)
V
R
P
D
DETECTOR
V
CEO
V
ECO
V
CBO
I
C
P
D
TOTAL DEVICE
V
ISO
P
D
T
A
T
stg
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector-Base Voltage
Rating
Forward Current – Continuous
Forward Current – Peak (PW = 100µs, 120pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
Value
60
1.0
6.0
90
0.8
70
7.0
70
150
150
1.76
2500
250
2.94
-40 to +100
-40 to +150
Unit
mA
A
V
mW
mW/°C
V
V
V
mA
mW
mW/°C
Vac(rms)
mW
mW/°C
°C
°C
Collector Current-Continuous
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
Input-Output Isolation Voltage (f = 60Hz, t = 1 min.)
(1)(2)(3)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
Notes:
1. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 sec.
©2005 Fairchild Semiconductor Corporation
MOC205M, MOC206M, MOC207M, MOC208M Rev. 1.0.1
www.fairchildsemi.com
2
MOC205M, MOC206M, MOC207M, MOC208M — Small Outline Optocouplers Transistor Output
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
Symbol
EMITTER
V
F
I
R
C
IN
I
CEO1
I
CEO2
BV
CEO
BV
ECO
C
CE
CTR
Input Forward Voltage
Reverse Leakage Current
Input Capacitance
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Capacitance
Collector-Output Current
(4)
MOC205M
MOC206M
MOC207M
MOC208M1
Isolation Surge Voltage
(1)(2)(3)
Isolation Resistance
(2)
Isolation Capacitance
(2)
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
V
CE
= 10V, T
A
= 25°C
V
CE
= 10V, T
A
= 100°C
I
C
= 100µA
I
E
= 100µA
f = 1.0 MHz, V
CE
= 0
I
F
= 10mA, V
CE
= 10V
40
63
100
40
f = 60 Hz AC Peak, t = 1 min.
V = 500V
I
C
= 2mA, I
F
= 10mA
V = 0V, f = 1MHz
I
C
= 2.0mA, V
CC
= 10 V,
R
L
= 100
Ω
(Fig. 6)
I
C
= 2.0mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 6)
I
C
= 2.0mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 6)
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
(Fig. 6)
0.2
7.5
5.7
3.2
4.7
2500
10
11
0.4
80
125
200
125
Vac(rms)
Ω
V
pF
µs
µs
µs
µs
70
7.0
I
F
= 10mA
V
R
= 6.0V
1.15
0.001
18
1.0
1.0
100
10
7.0
50
1.5
100
V
µA
pF
nA
µA
V
V
pF
%
Parameter
Test Conditions
Min.
Typ.*
Max.
Unit
DETECTOR
COUPLED
V
ISO
R
ISO
C
ISO
t
on
t
off
t
r
t
f
V
CE (sat)
Collector-Emitter Saturation Voltage
*Typical values at T
A
= 25°C
Notes:
1. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 sec.
4. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
©2005 Fairchild Semiconductor Corporation
MOC205M, MOC206M, MOC207M, MOC208M Rev. 1.0.1
www.fairchildsemi.com
3
MOC205M, MOC206M, MOC207M, MOC208M — Small Outline Optocouplers Transistor Output
Typical Performance Curves
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
10
Fig. 2 Output Curent vs. Input Current
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.7
V
F
– FORWARD VOLTAGE (V)
1.6
1.5
1
V
CE
= 5V
NORMALIZED TO I
F
= 10mA
1.4
T
A
= –55°C
1.3
T
A
= 25°C
1.2
0.1
1.1
T
A
= 100°C
1.0
1
10
100
I
F
– LED FORWARD CURRENT (mA)
0.01
0.1
1
10
100
I
F
– LED INPUT CURRENT (mA)
Fig. 3 Output Current vs. Ambient Temperature
10
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
Fig. 4 Output Current vs. Collector-Emitter Voltage
1.6
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.4
1.2
1.0
1
0.8
0.6
0.4
0.2
I
F
= 10mA
NORMALIZED TO V
CE
= 5V
0.0
0
1
2
3
4
5
6
7
8
9
10
NORMALIZED TO T
A
= 25°C
0.1
-80
-60
-40
-20
0
20
40
60
80
100
120
T
A
– AMBIENT TEMPERATURE (°C)
V
CE
– COLLECTOR-EMITTER VOLTAGE (V)
Fig. 5 Dark Current vs. Ambient Temperature
10000
1.0
Fig. 6 CTR vs. RBE (Unsaturated)
I
CEO
– COLLECTOR -EMITTER DARK CURRENT (nA)
1000
V
CE
= 10V
0.9
I
F
= 20mA
0.8
0.7
100
NORMALIZED CTR
0.6
0.5
I
F
= 10mA
I
F
= 5mA
0.4
0.3
0.2
0.1
0.0
10
1
V
CE
= 5V, T
A
= 25°C
Normalized to:
CTR at R
BE
= Open
10
100
1000
0.1
0
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE (°C)
R
BE
– BASE RESISTANCE (kΩ)
©2005 Fairchild Semiconductor Corporation
MOC205M, MOC206M, MOC207M, MOC208M Rev. 1.0.1
www.fairchildsemi.com
4
MOC205M, MOC206M, MOC207M, MOC208M — Small Outline Optocouplers Transistor Output
Typical Performance Curves
(Continued)
Fig. 7 CTR vs. RBE (Saturated)
1.0
0.9
3.5
4.0
V
CC
= 10V
I
C
= 2mA
R
L
= 100Ω
NORMALIZED TO :
t
on
AT R
BE
= OPEN
Fig. 8 Normalized ton vs. RBE
0.8
I
F
= 20mA
3.0
NORMALIZED CTR
0.7
0.6
0.5
I
F
= 5mA
0.4
0.3
0.2
0.1
0.0
10
V
CE
= 0.3V, T
A
= 25°C
Normalized to:
CTR at R
BE
= Open
100
1000
0.5
I
F
= 10mA
NORMALIZED t
on
2.5
2.0
1.5
1.0
0.0
0.01
0.1
1
10
100
R
BE
– BASE RESISTANCE (kΩ)
R
BE
–
BASE RESISTANCE (M
Ω
)
Fig. 9 Normalized toff vs. RBE
1.6
1.4
1.2
V
CC
= 10V
I
C
= 2mA
R
L
= 100
Ω
NORMALIZED TO :
t
off
AT R
BE
= OPEN
f
NORMALIZED t
off
f
1.0
0.8
0.6
0.4
0.2
0.0
0.01
0.1
1
10
100
R
BE
– BASE RESISTANCE
(M
Ω
)
TEST CIRCUIT
V
CC
= 10V
WAVEFORMS
INPUT PULSE
I
F
INPUT
R
BE
I
C
R
L
10%
90%
t
r
t
on
Adjust I
F
to produce I
C
= 2mA
t
f
t
off
OUTPUT PULSE
OUTPUT
Figure 10. Switching Time Test Circuit and Waveforms
©2005 Fairchild Semiconductor Corporation
MOC205M, MOC206M, MOC207M, MOC208M Rev. 1.0.1
www.fairchildsemi.com
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