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MOC3163SR2VM

OPTOISOLATOR 4.17KV TRIAC 6SMD

器件类别:光电子/LED    光电   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
SMT-6
制造商包装代码
646BY
Reach Compliance Code
compliant
Factory Lead Time
1 week
配置
SINGLE
最大正向电流
0.06 A
最大输入触发电流
0.005 A
最大绝缘电压
4170 V
JESD-609代码
e3
安装特点
SURFACE MOUNT
元件数量
1
最大通态电压
3 V
最高工作温度
85 °C
最低工作温度
-40 °C
光电设备类型
TRIAC OUTPUT OPTOCOUPLER WITH ZERO CRSVR
包装方法
TR
最小断态峰值电压
600 V
峰值浪涌电流
1 A
断态重复峰值电压
600 V
最大反向漏电流
0.0001 A
表面贴装
YES
端子面层
Tin (Sn)
Base Number Matches
1
文档预览
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
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MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak)
September 2015
MOC3061M, MOC3062M, MOC3063M,
MOC3162M, MOC3163M
6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak)
Features
• Simplifies Logic Control of 115/240 VAC Power
• Zero Voltage Crossing to Minimize Conducted and
Radiated Line Noise
• 600 V Peak Blocking Voltage
• Superior Static dv/dt
– 600 V/μs (MOC306xM)
– 1000 V/μs (MOC316xM)
• Safety and Regulatory Approvals
– UL1577, 4,170 VAC
RMS
for 1 Minute
– DIN EN/IEC60747-5-5
Description
The MOC306XM and MOC316XM devices consist of a
GaAs infrared emitting diode optically coupled to a
monolithic silicon detector performing the function of a
zero voltage crossing bilateral triac driver.
They are designed for use with a triac in the interface of
logic systems to equipment powered from 115/240 VAC
lines, such as solid-state relays, industrial controls,
motors, solenoids and consumer appliances, etc.
Applications
Solenoid/Valve Controls
Static Power Switches
Temperature Controls
AC Motor Starters
Lighting Controls
AC Motor Drives
E.M. Contactors
Solid State Relays
Schematic
Package Outlines
ANODE 1
6 MAIN TERM.
CATHODE 2
5 NC*
N/C 3
ZERO
CROSSING
CIRCUIT
4 MAIN TERM.
*DO NOT CONNECT
(TRIAC SUBSTRATE)
Figure 1. Schematic
Figure 2. Package Outlines
©2005 Fairchild Semiconductor Corporation
MOC306XM, MOC316XM Rev. 1.5
www.fairchildsemi.com
MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak)
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
< 150 V
RMS
< 300 V
RMS
Characteristics
I–IV
I–IV
40/85/21
2
175
Symbol
Parameter
Input-to-Output Test Voltage, Method A, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC
Input-to-Output Test Voltage, Method B, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
External Creepage
External Clearance
External Clearance (for Option TV, 0.4" Lead Spacing)
Value
1360
1594
850
6000
7
7
10
0.5
> 10
9
Unit
V
peak
V
peak
V
peak
V
peak
mm
mm
mm
mm
Ω
V
PR
V
IORM
V
IOTM
DTI
R
IO
Distance Through Insulation (Insulation Thickness)
Insulation Resistance at T
S
, V
IO
= 500 V
©2005 Fairchild Semiconductor Corporation
MOC306XM, MOC316XM Rev. 1.5
www.fairchildsemi.com
2
MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. T
A
= 25°C unless otherwise specified.
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
J
T
SOL
P
D
EMITTER
I
F
V
R
P
D
DETECTOR
V
DRM
I
TSM
P
D
Parameters
Storage Temperature
Operating Temperature
Junction Temperature Range
Lead Solder Temperature
Total Device Power Dissipation at 25°C Ambient
Derate Above 25°C
Continuous Forward Current
Reverse Voltage
Total Power Dissipation at 25°C Ambient
Derate Above 25°C
Off-State Output Terminal Voltage
Peak Non-Repetitive Surge Current
(Single Cycle 60 Hz Sine Wave)
Total Power Dissipation at 25°C Ambient
Derate Above 25°C
Device
All
All
All
All
All
Value
-40 to +150
-40 to +85
-40 to +100
260 for
10 seconds
250
2.94
60
6
120
1.41
600
1
150
1.76
Unit
°C
°C
°C
°C
mW
mW/°C
mA
V
mW
mW/°C
V
A
mW
mW/°C
All
All
All
All
All
All
©2005 Fairchild Semiconductor Corporation
MOC306XM, MOC316XM Rev. 1.5
www.fairchildsemi.com
3
MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak)
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
EMITTER
V
F
I
R
Input Forward Voltage
Reverse Leakage Current
I
F
= 30 mA
V
R
= 6 V
All
All
MOC306XM
MOC316XM
MOC306XM
MOC316XM
600
1000
1.3
0.005
10
10
1500
1.5
100
500
100
V
μA
Parameters
Test Conditions
Device
Min.
Typ.
Max.
Unit
DETECTOR
I
DRM1
dv/dt
Peak Blocking Current,
Either Direction
Critical Rate of Rise of
Off-State Voltage
V
DRM
= 600 V, I
F
= 0
(1)
I
F
= 0 (Figure 11)
(2)
nA
V/μs
Transfer Characteristics
Symbol
DC Characteristics
Test Conditions
Device
MOC3061M
I
FT
LED Trigger Current
(Rated I
FT
)
Main Terminal
Voltage = 3 V
(3)
MOC3062M
MOC3162M
MOC3063M
MOC3163M
I
TM
= 100 mA peak,
I
F
= rated I
FT
All
All
1.8
500
Min. Typ. Max.
15
10
5
3.0
Unit
mA
V
TM
I
H
Peak On-State Voltage, Either Direction
Holding Current, Either Direction
V
μA
Zero Crossing Characteristics
Symbol
Characteristics
Inhibit Voltage (MT1-MT2
voltage above which
device will not trigger)
Test Conditions
Device
MOC3061M
MOC3062M
MOC3063M
MOC3162M
MOC3163M
Min.
Typ.
12
Max.
20
Unit
V
INH
I
F
= rated I
FT
V
12
15
2
mA
I
DRM2
Leakage in Inhibited
State
I
F
= rated I
FT
,
DRM
= 600 V,
off-state
All
Isolation Characteristics
Symbol
V
ISO
R
ISO
C
ISO
Parameter
Isolation Voltage
(4)
Isolation Resistance
Isolation Capacitance
Test Conditions
f = 60 Hz, t = 1 Minute
V
I-O
= 500 V
DC
V = 0 V, f = 1 MHz
Min.
4170
Typ.
10
11
0.2
Max.
Unit
VAC
RMS
Ω
pF
Notes:
1. Test voltage must be applied within dv/dt rating.
2. This is static dv/dt. See Figure 11 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
3. All devices are guaranteed to trigger at an I
F
value less than or equal to max I
FT
. Therefore, recommended operating
I
F
lies between max I
FT
(15 mA for MOC3061M, 10 mA for MOC3062M and MOC3162M, 5 mA for MOC3063M and
MOC3163M) and absolute maximum I
F
(60 mA).
4. Isolation voltage, V
ISO
, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and
pins 4, 5 and 6 are common.
©2005 Fairchild Semiconductor Corporation
MOC306XM, MOC316XM Rev. 1.5
www.fairchildsemi.com
4
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