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MOC80803SD

OPTOISO 5.3KV DARL W/BASE 6SMD

器件类别:光电子/LED   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:

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器件参数
参数名称
属性值
通道数
1
电压 - 隔离
5300Vrms
电流传输比(最小值)
50% @ 10mA
打开 / 关闭时间(典型值)
3.5µs,25µs
输入类型
DC
输出类型
有基极的达林顿晶体管
电压 - 输出(最大值)
55V
电压 - 正向(Vf)(典型值)
1.2V
电流 - DC 正向(If)
100mA
Vce 饱和值(最大值)
1V
工作温度
-55°C ~ 100°C
安装类型
表面贴装
封装/外壳
6-SMD,鸥翼
供应商器件封装
6-SMD
文档预览
PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION
The CNX48U, H11BX, MOC8080 and TIL113 have a
gallium arsenide infrared emitter optically coupled to a
silicon planar photodarlington.
CNX48U
H11B1
MOC8080 TIL113
H11B2
H11B255
H11B3
FEATURES
• High sensitivity to low input drive current
• Meets or exceeds all JEDEC Registered Specifications
• VDE 0884 approval available as a test option
-add option .300. (e.g., H11B1.300)
6
1
6
1
ANODE 1
6 BASE
SCHEMATIC
APPLICATIONS
Low power logic circuits
6
Telecommunications equipment
Portable electronics
Solid state relays
Interfacing coupling systems of different potentials and impedances.
CATHODE 2
5 COLLECTOR
1
N/C 3
4 EMITTER
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (300 µs, 2% Duty Cycle)
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
Symbol
T
STG
T
OPR
T
SOL
P
D
I
F
V
R
I
F
(pk)
P
D
Device
All
All
All
All
All
All
All
All
CNX48U, TIL113
H11B1, H11B2
Value
-55 to +150
-55 to +100
260 for 10 sec
250
3.3
100
6
3.0
100
1.8
30
25
55
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
Collector-Emitter Breakdown Voltage
BV
CEO
H11B3
H11B255
MOC8080
CNX48U, H11B1
H11B2, H11B3
V
30
V
Collector-Base Breakdown Voltage
BV
CBO
TIL113
H11B255
MOC8080
55
7
150
2.0
V
V
mW
mW/°C
Emitter-Collector Breakdown Voltage
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
BV
ECO
P
D
All
All
6/1/00
200042A
PHOTODARLINGTON OPTOCOUPLERS
CNX48U
H11B1
MOC8080 TIL113
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
H11B2
H11B255
H11B3
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
(I
F
= 10 mA)
Input Forward Voltage
V
F
Test Conditions
Symbol
Device
H11B1, H11B2
H11B255
MOC8080
TIL113
CNX48U
MOC8080
H11B3
I
R
C
All
All
CNX48U
BV
CEO
TIL113
H11B1, H11B2
H11B3
H11B255
MOC8080
CNX48U, H11B1
Collector-Base
Breakdown Voltage
(I
C
= 100 µA, I
F
= 0)
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Dark Current
Note
** Typical values at T
A
= 25°C
(I
E
= 100 µA, I
B
= 0)
(V
CE
= 10 V, Base Open)
BV
ECO
I
CEO
(I
C
= 100 µA, I
E
= 0)
BV
CBO
H11B2, H11B3
TIL113
H11B255
MOC8080
All
All
55
7
100
10
1
100
V
nA
30
100
V
25
55
60
70
V
30
0.9
0.7
1.2
1.3
1.05
1.35
0.001
50
60
1.3
1.7
1.4
1.5
10
µA
pF
0.8
1.2
1.5
V
Min
Typ**
Max
Unit
(I
F
= 10 mA)
(I
F
= 10 mA, T
A
= -55°C)
(I
F
= 10 mA, T
A
= 100°C)
(I
F
= 50 mA)
Reverse Leakage Current
Capacitance
DETECTOR
(V
R
= 6 V)
(V
F
= 0 V, f = 1.0 MHz)
(I
C
= 1 mA, I
F
= 0)
(I
C
= 100 µA, I
F
= 0)
(I
C
= 10 mA, I
F
= 0)
(I
C
= 100 µA, I
F
= 0)
(I
C
= 1 mA, I
F
= 0)
Collector-Emitter
Breakdown Voltage
6/1/00
200042A
PHOTODARLINGTON OPTOCOUPLERS
CNX48U
H11B1
MOC8080 TIL113
TRANSFER CHARACTERISTICS
DC Characteristics
(T
A
= 25°C Unless otherwise specified.)
Symbol
Device
MOC8080
H11B255
CNX48U
TIL113
I
C
(CTR)
(I
F
= 1 mA, V
CE
= 5 V)
(I
F
= 1 mA, V
CE
= 1 V)
(I
F
= 0.5 mA, V
CE
= 1 V)
(I
F
=1 mA, I
C
= 1 mA)
Saturation Voltage
(I
F
= 5 mA, I
C
= 10 mA)
(I
F
= 50 mA, I
C
= 50 mA)
(I
F
= 8 mA, I
C
= 2 mA)
AC Characteristics
(I
C
= 10 mA, V
CE
= 10 V)
(R
L
= 100
) (Fig.7)
t
on
t
off
t
on
t
off
t
on
t
off
t
on
t
off
t
on
TIL113
t
off
)
MOC8080
CNX48U
V
CE(sat)
H11B1
H11B2
H11B3
CNX48U
H11B1, H11B2
H11B3, MOC8080
CNX48U
H11B255
TIL113
H11B1
H11B2
H11B255
H11B3
H11B2
H11B255
H11B3
Test Conditions
(I
F
= 10 mA, V
CE
= 5 V)
(I
F
= 10 mA, V
CE
= 1 V)
Min
50 (500)
10 (100)
60 (600)
30 (300)
5 (500)
2 (200)
1 (100)
5 (500)
1.75 (350)
Typ**
Max
Units
Collector Output
Current
(1)
mA (%)
1.0
1.0
1.0
1.25
25
18
3.5
36
µs
70
190
3.5
25
0.35
55
5
100
V
(I
F
= 10 mA, V
CC
= 5 V)
(R
E
= 100 ), (R
BE
= 1M )
Switching Times
(Fig. 8)
(I
F
= 1 mA, V
CC
= 5 V)
(R
E
= 1k ), (R
BE
= 10M )
(Fig. 8)
(I
F
= 5 mA, V
CC
= 10 V)
(R
L
= 100
) (Fig.7)
(I
F
= 200 mA, I
C
= 50 mA)
(V
CC
= 10 V) (R
L
= 100
(Fig.7)
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
(2)
Isolation Resistance
(2)
Isolation Capacitance
(2)
Note
** Typical values at T
A
= 25°C
(I
I-O
Test Conditions
1 µA, Vrms, t = 1 min.)
(V
I-O
= 500 VDC)
(V
I-O
=
, f = 1 MHz)
R
ISO
C
ISO
Symbol
Min
5300
10
11
0.8
pf
Typ**
Max
Units
Vac(rms)
6/1/00
200042A
PHOTODARLINGTON OPTOCOUPLERS
CNX48U
H11B1
MOC8080 TIL113
Fig. 1 Output Current vs. Input Current
CTR - CURRENT TRANSFER RATIO (NORMALIZED)
H11B2
H11B255
H11B3
Fig. 2 Current Transfer Ratio vs. Ambient Temperature
CTR - CURRENT TRANSFER RATIO (NORMALIZED)
10
T
A
= 0˚C, 25˚C
T
A
= 70˚C
T
A
= 100˚C
T
A
= -55˚C
1
1
NORMALIZED TO:
CTR @ I
F
= 10 mA
T
A
= 25˚C
V
CE
= 5 V
0.1
0.1
1
10
100
NORMALIZED TO:
CTR @ I
F
= 10 mA
T
A
= 25˚C
V
CE
= 10 V
0.1
-80
-60
-40
-20
0
20
40
60
80
100
120
I
F
- LED INPUT CURRENT (mA)
T
A
- AMBIENT TEMPERATURE (˚C)
Fig. 3 Collector Current vs. Collector-Emitter Voltage
NORMALIZED TO:
I
F
= 1 mA
V
CE
= 5 V
Fig. 4 Dark Current vs. Ambient Temperature
I
CEO
- COLLECTOR-EMITTER DARK CURRENT (nA)
10000
V
CE
= 10 V
1000
16
I
C
- COLLECTOR CURRENT (NORMALIZED)
14
12
I
F
= 10 mA
10
I
F
= 5 mA
100
8
10
6
1
4
I
F
= 2 mA
2
0.1
I
F
= 1 mA
0
0
1
2
3
4
5
6
7
8
9
10
0.01
0
20
40
60
80
100
V
CE
- COLLECTOR -EMITTER VOLTAGE (V)
T
A
- AMBIENT TEMPERATURE (˚C)
Fig. 5 Turn-On Time vs. Input Current
1000
R
L
= 1 k
VCC = 10 V
100
R
L
= 100
1000
Fig. 6 Turn-Off Time vs. Input Current
T
ON
- TIME (µs)
10
R
L
= 10
T
OFF
- TIME (µs)
100
R
L
= 1 k
R
L
= 100
10
R
L
= 10
1
VCC = 10 V
1
0.1
0.1
1
10
100
0.1
1
10
100
I
F
- LED INPUT CURRENT (mA)
I
F
- LED INPUT CURRENT (mA)
6/1/00
200042A
PHOTODARLINGTON OPTOCOUPLERS
CNX48U
H11B1
MOC8080 TIL113
TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES
(25°C Free air temperature unless otherwise specified) (Cont.)
H11B2
H11B255
H11B3
V
CC
INPUT
R
L
R
IN
INPUT
PULSE
OUTPUT
OUTPUT
10%
1.5 V
90%
5V
t
on
I
F
t
off
Test Circuit (All devices except CNX48U)
Switching Waveforms (All devices except CNX48U)
Fig. 7 Switching Time Test Circuit and Waveforms (All devices except CNX48U)
V
CC
INPUT
INPUT
R
BE
50
OUTPUT
R
E
t
on
90%
10%
t
off
Test Circuit (CNX48U only)
Switching Waveforms (CNX48U only)
Fig. 8 Switching Time Test Circuit and Waveforms (CNX48U only)
Notes
1. The current transfer ratio(I
C
/I
F
) is the ratio of the detector collector current to the LED input current with V
CE
@ 10 V.
2. For this test, LED pins 1 and 2 are common and phototransistor pins 4,5 and 6 are common.
6/1/00
200042A
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