TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
May 2013
TIL111M, TIL117M, MOC8100M
General Purpose 6-Pin Phototransistor Optocouplers
Features
■
UL Recognized (File # E90700)
■
VDE Recognized (File #102497 for white package)
General Description
The MOC8100M, TIL111M, and TIL117M optocouplers
consist of a gallium arsenide infrared emitting diode
driving a silicon phototransistor in a 6-pin dual in-line
package.
– Add Option V (e.g., TIL111VM)
Applications
■
Power Supply Regulators
■
Digital Logic Inputs
■
Microprocessor Inputs
■
Appliance Sensor Systems
■
Industrial Controls
Schematic
ANODE 1
6 BASE
Package Outlines
CATHODE 2
5 COLLECTOR
NC 3
4 EMITTER
Figure 1. Schematic
Figure 2. Package Outlines
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Safety and Insulation Ratings
As per IEC60747-5-2. This optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89 Table 1
For Rated Mains Voltage < 150 V
RMS
For Rated Mains Voltage < 300 V
RMS
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Min.
Typ.
I–IV
I–IV
55/100/21
2
Max.
Unit
CTI
V
PR
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = V
PR
, 100% Production Test with
t
m
= 1 s, Partial Discharge < 5 pC
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
PR
, Type and Sample Test with
t
m
= 60 s, Partial Discharge < 5 pC
175
1594
1275
V
IORM
V
IOTM
Maximum Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
850
6000
7
7
0.5
10
9
V
peak
V
peak
mm
mm
mm
Ω
R
IO
Insulation Resistance at T
S
, V
IO
= 500 V
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
2
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Total Device
T
STG
T
OPR
T
SOL
P
D
Emitter
I
F
V
R
I
F
(pk)
P
D
Detector
V
CEO
V
CBO
V
ECO
V
EBO
P
D
Parameter
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
A
= 25°C
Derate Above 25°C
Device
All
All
All
All
Value
-40 to +150
-40 to +100
260 for 10 sec
250
2.94
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
V
V
V
mW
mW/°C
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current – Peak (300 µs, 2% Duty Cycle)
LED Power Dissipation @ T
A
= 25°C
Derate Above 25°C
All
TIL111M
MOC8100M, TIL117M
All
All
60
3
6
3
120
1.41
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Emitter-Base Voltage
Detector Power Dissipation @ T
A
= 25°C
Derate Above 25°C
All
All
TIL111M, TIL117M
All
All
30
70
7
7
150
1.76
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
3
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
Emitter
V
F
Input Forward
Voltage
I
F
= 16 mA
I
F
= 10 mA for
MOC8100M,
I
F
= 16 mA for
TIL117M
V
R
= 3.0 V
V
R
= 6.0 V
I
C
= 1.0 mA, I
F
= 0
I
C
= 10 µA, I
F
= 0
I
E
= 10 µA, I
F
= 0
I
F
= 100 µA, I
F
= 0
V
CE
= 10 V, I
F
= 0
V
CE
= 5 V, T
A
= 25°C
V
CE
= 30 V, I
F
= 0, T
A
= 70°C
I
CBO
I
CBO
C
CE
Collector-Base Dark V
CB
= 10 V
Current
V
CB
= 5 V
Capacitance
V
CE
= 0 V, f = 1 MHz
T
A
= 25°C
T
A
= 0°C to 70°C
T
A
= -55°C
T
A
= +100°C
TIL111M, TIL117M
MOC8100M
All
All
All
TIL111M, TIL117M
TIL111M, TIL117M
MOC8100M
TIL117M,
MOC8100M
TIL111M, TIL117M
MOC8100M
All
8
30
70
7
7
TIL111M
MOC8100M,
TIL117M
1.2
1.2
1.32
1.10
0.001
0.001
100
120
10
10
1
0.5
0.2
50
25
50
20
10
10
10
µA
µA
V
V
V
V
nA
nA
µA
nA
nA
pF
1.4
1.4
V
Parameter
Test Conditions
Device
Min. Typ.* Max. Unit
I
R
Detector
BV
CEO
BV
CBO
BV
EBO
BV
ECO
I
CEO
Reverse Leakage
Current
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Dark Current
*All Typical values at T
A
= 25°C
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
4
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Electrical Characteristics
(Continued)
T
A
= 25°C unless otherwise specified.
Transfer Characteristics
Symbol
CTR
CE
Parameter
Current Transfer Ratio,
Collector to Emitter
Test Conditions
I
F
= 10 mA, V
CE
= 10 V
I
F
= 1 mA, V
CE
= 5 V
I
F
= 1 mA, V
CE
= 5 V,
T
A
= 0°C to +70°C
Device
TIL117M
MOC8100M
Min
50
50
30
Typ*
Max
Unit
%
%
DC Characteristics
I
C(ON)
On-State Collector Current
(Phototransistor Operation)
On-State Collector Current
(Photodiode Operation)
I
F
= 16 mA, V
CE
= 0.4 V
I
F
= 16 mA, V
CB
= 0.4 V
I
C
= 500 µA, I
F
= 10 mA
I
C
= 2 mA, I
F
= 16 mA
I
C
= 100 µA, I
F
= 1 mA
TIL111M
2
7
mA
µA
0.4
0.4
0.5
20
10
20
10
2
2
10
µs
µs
µs
µs
V
V
CE (SAT)
Collector-Emitter Saturation
Voltage
TIL117M
TIL111M
MOC8100M
MOC8100M
TIL117M
MOC8100M
TIL117M
MOC8100M
TIL117M
AC Characteristics
ON
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
Rise Time
(Phototransistor Operation)
Fall Time
(Phototransistor Operation)
I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100
Ω
(Fig. 13)
OFF
t
r
t
f
t
r
t
f
I
C(ON)
= 2 mA, V
CC
= 10 V,
R
L
= 100
Ω
(Fig. 13)
TIL111M
Isolation Characteristics
Symbol
V
ISO
R
ISO
C
ISO
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
f = 60 Hz, t = 1 s
V
I-O
= 500 V
DC
V
I-O
= 0,
f = 1 MHz
Min.
7500
10
11
Typ.*
Max.
Units
V
AC(PK)
Ω
0.2
pF
*All Typical values at T
A
= 25°C.
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
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