MOC8106X, MOC8107X, MOC8108X
MOC8106, MOC8107, MOC8108
NON-BASE LEAD
OPTICALLY COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
UL recognised, File No. E91231
Package Code " EE "
'X' SPECIFICATIONAPPROVALS
VDE 0884 in 3 available lead forms : -
- STD
-
G form
-
SMD approved to CECC 00802
DESCRIPTION
The MOC8106, MOC8107, MOC8108 series of
optically coupled isolators consist of infrared
light emitting diode and NPN silicon photo
transistor in a standard 6 pin dual in line plastic
package with the base pin unconnected.
FEATURES
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
Base pin unconnected for improved
noise immunity in high EMI
environment
APPLICATIONS
DC motor controllers
Industrial systems controllers
Signal transmission between systems of
different potentials and impedances
3.0
0.5
2.54
7.0
6.0
1.2
7.62
6.62
Dimensions in
mm
6
1
2
5
3
4
7.62
4.0
3.0
0.5
3.35
0.26
13°
Max
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
120mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
1.4
0.9
OPTION SM
SURFACE
MOUNT
OPTION G
70V
7V
160mW
7.62
1.2
0.6
10.2
9.5
0.26
10.16
Total Power Dissipation
200mW
(derate linearly 2.94mW/°C above 25°C)
ISOCOMCOMPONENTSLTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
27/11/08
DA92586
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
Collector-emitter Breakdown (BV
CEO
)
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Output Collector Current I
C
(CTR)
( Note 2&3 )
MOC8106
MOC8107
MOC8108
Collector-emitter SaturationVoltageV
CE (SAT)
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Turn-on Time
ton
Turn-off Time
toff
Output Rise Time tr
Output Fall Time
tf
Note 1
Note 2
Note 3
5300
7500
5x10
10
7.5
5.7
3.2
4.7
20
20
MIN
1.0
6
TYP MAX
1.15
1.5
10
70
6
1.0
50
UNITS TEST CONDITION
V
V
μA
V
V
nA
I
F
= 10mA
I
R
= 10μA
V
R
= 6V
I
C
= 1mA
I
E
= 100μA
V
CE
= 10V
Output
Coupled
5.0(50)
10(100)
25(250)
0.15
15(150) mA(%)
30(300) mA(%)
60(600) mA(%)
0.4
V
V
RMS
V
PK
Ω
μs
μs
μs
μs
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
5mA I
F
, 0.5mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CC
= 10V ,
I
C
= 2mA, R
L
= 100Ω
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
Production testing - limits verified with pulse test
27/11/08
DA92586
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Collector Current vs. Collector-emitter Voltage
50
T
A
= 25°C
50
30
20
15
20
10
0
10
I
F
= 5mA
150
Collector current I
C
(mA)
40
30
100
50
0
-30
0
25
50
75
100 125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
Collector-emitter saturation voltage V
CE(SAT)
(V)
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Collector-emitter Saturation Voltage
vs. Ambient Temperature
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
I
F
= 5mA I
C
= 0.5mA
80
70
Forward current I
F
(mA)
60
50
40
30
20
10
0
-30
0
25
50
75
100 125
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
Relative current transfer ratio
I
F
= 10mA
V
CE
= 10V
1.0
0.5
0
-30
0
25
50
75
100
DA92586
Ambient temperature T
A
( °C )
27/11/08
嵌入式系统
