MIL-STD-202, Method 107G, Condition B, B-1, or F ±0.20%
MIL-STD-202, Method 108A, Condition D
±1.0%
MIL-STD-202, Method 215G
Acceptable for High Reliability Series only
MIL-STD-202, Method 211A, Condition A or B
±0.25%
MIL-STD-202, Method 213B, Condition I
±0.25%
MIL-STD-202, Method 204D, Condition D
±0.20%
MIL-R-49462A, Par 4.8
±0.50%
MIL-STD-202, Method 208F
>95% Coverage
Voltage Coeff. of Resistance**
< 2PPM/Volt
< 5PPM/Volt
250Ω-1,000M
500Ω-2,600M
750Ω-4,000M
1K-5,300M
1.25K-6,700M
1,001M-100,000M
2,601M-200,000M
4,001M-300,000M
5,301M-400,000M
6,701M-500,000M
t e M P . a n d V O lt a g e C O e F F i C i e n t s O F r e s i s t a n C e
Resistor Series
MOX-1
MOX-2
MOX-3
MOX-4
MOX-5
Temp. Coeff. of Resistance*
25 PPM/°C
50 PPM/°C
100 PPM/°C
1K-99M
1K-199M
1K-299M
1K-399M
1K-499M
100M-450M
200M-1,000M
300M-1,500M
400M-2,000M
500M-2,500M
451M-30,000M
1,001M-60,000M
1,501M-90,000M
2,001M-120,000M
2,501M-150,000M
*TCR of 25ppm for temperature range of 0°C-85°C. TCR of 50ppm and 100ppm for -55°C to 125°C. Consult factory for TCR values operating higher than 125°C
广义上来说,处理器性能与广义上的DRAM主存储器性能之间的差距至少在三十年前就成为一个问题。但在此期间,那些聪明的硬件和软件工程师创建了缓存层次结构的以及可以利用缓存层次结构的软件来缓解相关问题。 但是,随着我们坐在不断扩展的内存层次结构的风口浪尖上,诸如Optane 3D XPoint(相变内存的一种变体)之类的持久性内存已应用于DIMM和SSD尺寸因素以及诸如CXL,OpenCAP...[详细]