MP03 XXX 330 Series
MP03 XXX 330 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces December 1998 version, DS4483-4.0
DS4483-5.0 January 2000
FEATURES
s
Dual Device Module
s
Electrically Isolated Package
s
Pressure Contact Construction
s
International Standard Footprint
s
Alumina (non-toxic) Isolation Medium
APPLICATIONS
s
Motor Control
s
Controlled Rectifier Bridges
s
Heater Control
s
AC Phase Control
VOLTAGE RATINGS
Type
Number
Repetitive
Peak
Voltages
V
DRM
V
RRM
Conditions
Code
KEY PARAMETERS
1200V
V
DRM
I
TSM
10600A
I
T(AV)
(per arm)
334A
2500V
V
isol
CIRCUIT OPTIONS
Circuit
HBT
HBP
HBN
PACKAGE OUTLINE
MP03/330 - 12
MP03/330 - 10
MP03/330 - 08
1200
1000
800
T
(vj)
= 130
o
C
I
DRM
= I
RRM
= 30mA
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
For full description of part number see "Ordering instructions"
on page 3.
CURRENT RATINGS - PER ARM
Symbol
Parameter
Module type code: MP03.
See Package Details for further information
Conditions
Max.
Units
T
case
= 75
o
C
T
case
= 85
o
C
I
T(AV)
Mean on-state current
Halfwave, resistive load
T
heatsink
= 75
o
C
T
heatsink
= 85
o
C
I
T(RMS)
RMS value
T
case
= 75
o
C
334
289
259
223
525
A
A
A
A
A
1/10
MP03 XXX 330 Series
SURGE RATINGS - PER ARM
Symbol
Parameter
Conditions
Max.
Units
I
TSM
Surge (non-repetitive) on-state current
V =0
10ms half sine;
R
T
j
= 130˚C
V
R
= 50% V
RRM
10ms half sine;
T
j
= 130˚C
V
R
= 0
V
R
= 50% V
RRM
10.6
8.5
0.56 x 10
6
0.36 x 10
6
A
kA
A
2
s
A
2
s
I
2
t
I
2
t for fusing
THERMAL & MECHANICAL RATINGS
Symbol
Parameter
Conditions
Max.
Units
o
dc
R
th(j-c)
Thermal resistance - junction to case
per Thyristor or Diode
halfwave
3 phase
R
th(c-hs)
T
vj
T
stg
V
isol
Thermal resistance - case to heatsink
per thyristor or diode
Virtual junction temperature
Storage temperature range
Isolation voltage
Commoned terminals to base plate
AC RMS, 1min, 50Hz
Mounting torque = 5Nm
with mounting compound
Off-state (Blocking)
0.11
0.12
0.13
0.05
130
-40 to 130
2.5
C/W
o
C/W
C/W
C/W
o
o
o
C
o
C
kV
DYNAMIC CHARACTERISTICS- THYRISTOR
Symbol
Parameter
Conditions
Max.
Units
V
TM
I
RRM
/I
DRM
dV/dt
dI/dt
V
T(TO)
r
T
On-state voltage
Peak reverse and off-state current
Linear rate of rise of off-state voltage
At 1000A, T
case
= 25
o
C
At V
RRM
/V
DRM
, T
j
= 130
o
C
To 67% V
DRM
T
j
= 130
o
C
From 67% V
DRM
to 600A
Gate source 10V, 5Ω
Rise time 0.5µs, T
j
=130
o
C
At T
vj
= 130
o
C
At T
vj
= 130
o
C
1.50
30
200*
V
mA
V/µs
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
100
0.8
0.7
A/µs
V
mΩ
* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
2/10
MP03 XXX 330 Series
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
Typ.
Max.
Units
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 25
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
-
-
-
-
-
3.0
150
0.25
30
0.25
5.0
10
100
5
V
mA
V
V
V
V
A
W
W
Anode positive with respect to cathode
t
p
= 25µs
-
-
-
ORDERING INSTRUCTIONS
Part number is made up of as follows:
MP03 HBT 330 -10
MP
03
HBT
330
10
= Pressure contact module
= Outline type
= Circuit configuration code (see "circuit options" - front page)
= Nominal average current rating at T
case
= 75
o
C
= V
RRM
/100
Examples:
MP03 HBP330 - 08
MP03 HBN330 - 12
MP03 HBT330 - 08
NOTE: Diode ratings and characteristics are comparable with the SCR in types HBP or HBN
Types HBP or HBN can also be supplied with diode polarity reversed, to special order.
MOUNTING RECOMMENDATIONS
s
Adequate heatsinking is required to maintain the base
temperature at 75
o
C if full rated current is to be achieved. Power
dissipation may be calculated by use of V
T(TO)
and r
T
information in
accordance with standard formulae. We can provide assistance
with calculations or choice of heatsink if required.
s
The heatsink surface must be smooth and flat; a surface finish
of N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.
s
Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build up
and foreign material. Care should be taken to ensure no foreign
particles remain.
s
An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces. This
should ideally be 0.05mm (0.002") per surface to ensure optimum
thermal performance.
s
After application of thermal compound, place the module squarely
over the mounting holes, (or 'T' slots) in the heatsink. Using a
torque wrench, slowly tighten the recommended fixing bolts at
each end, rotating each in turn no more than 1/4 of a revolution at
a time. Continue until the required torque of 5Nm (44lb.ins) is
reached at both ends.
s
It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others. Such action may DAMAGE the module.
3/10
MP03 XXX 330 Series
CURVES
1600
Measured under pulse conditions
Instantaneous on-state current - (A)
1200
800
T
j
= 130˚C
400
0
1.2 1.4 1.6 1.8
0.6 0.8 1.0
Instantaneous on-state voltage - (V)
Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1
100
Table gives pulse power P
GM
in Watts
Pulse Width
µs
20
25
100
500
1ms
10ms
Frequency Hz
50 100 400
100 100 100
100 100 100
100 100 100
100 100 25
100 50
-
10
-
-
T
j
= -40˚C
T
j
= 25˚C
T
j
= 125˚C
%
9
it 9
im
rL
e
pp
U
0W
10 W
75 W
50
W
10
5W
V
FGM
Gate trigger voltage - (V)
10
0.1
0.001
0.01
I
GD
0.1
0.1
Gate trigger current - (A)
FIG 2 GATE CHARACTERISTICS
Fig. 2 Gate trigger characteristics
Lo
w
er
Li
1
m
it
Region of
certain triggering
1%
10
I
FGM
4/10
MP03 XXX 330 Series
0.15
Thermal impedance - (˚C/W)
d.c.
0.10
0.05
0
0.001
0.01
0.1
Time - (s)
1.0
10
100
Fig. 3 Transient thermal impedance (DC) - (Thyristor or diode)
Peak half sine wave on-state current - (kA)
20
I
2
t = Î
2
x t
2
15
500
450
10
It
5
2
I
2
t value - (A
2
s x 10
3
)
400
350
300
250
200
0
1
ms
10
1
2
3 45
150
50
Cycles at 50Hz
Duration
Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% V
RRM
, T
case
= 130˚C (Thyristor or diode)
5/10
