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MP2N1632X14PB

Varistor, 14V, 0.05J, Surface Mount, CHIP, 1632

器件类别:无源元件    电阻器   

厂商名称:SAMWHA(三和)

厂商官网:http://www.samwha.com/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
包装说明
,
Reach Compliance Code
compli
ECCN代码
EAR99
电路直流最大电压
14 V
最大能量吸收容量
0.05 J
JESD-609代码
e4
制造商序列号
MP
安装特点
SURFACE MOUNT
端子数量
2
最高工作温度
125 °C
最低工作温度
-55 °C
封装形状
RECTANGULAR PACKAGE
包装方法
BULK
电阻器类型
VARISTOR
表面贴装
YES
端子面层
Silver (Ag)
端子位置
DUAL IN-LINE
端子形状
WRAPAROUND
Base Number Matches
1
文档预览
Multilayer Chip Varistors
Shape & Dimensions (1 element chip)
Size Code
C
L
1.0±0.05
1.6±0.15
2.0±0.20
3.2±0.25
3.2±0.25
W
0.5±0.05
0.8±0.15
1.25±0.20
1.60±0.20
2.50±0.25
T max C min
0.55
0.9
1.3
1.4
1.7
0.1
0.2
0.2
0.2
0.2
1005 ( 0402 )
1608 ( 0603 )
T
W
2012 ( 0805 )
L
3216 ( 1206 )
3225 ( 1210 )
Shape & Dimensions (4 element chip)
TYPE
W
B
L
MP2N1220
2.0±0.20
1.25±0.20
0.8±0.1
0.76±0.1
0.62±0.1
0.4±0.15
0.10~0.18
MP4N1632
3.2±0.2
1.60±0.20
1.2 max
0.80±0.1
0.40±0.1
0.4±0.15
0.20~0.45
L
W
T
L
T
S
M
BL
Bw
S
M
BW
1
Multi Layer Chip Varistors
Land Pattern Design
General Chip Pattern
a
b
a
a
S IZE
1005
a
0.7
1.0
1.0
1.1
1.1
b
0.5
0.8
1.0
2.2
2.2
c
0.5
0.8
1.2
1.6
2.5
b
1608
a
c
2012
3216
1005
1608
Array Pattern
c
2012 , 3216
3225
3225
S IZE
MP2N1220
1.2
0.6
2.6
0.4
MP4N1632
0.8
0.8
3.0
0.4
C
A
B
B
C
A
Soldering profile
Flow Soldering
Pre-heating
200
Soldering
240℃
D
D
Reflow Soldering
Cooling
Temperature(℃)
Temperature(℃)
Pre-heating
200
Soldering
230℃
Cooling
100
100
0
0
60 sec. min.
10 sec. max.
60 sec. min.
10 sec. max.
2
Multi Layer Chip Varistors
Packing ( Reel , Emboss Packing )
Reel Dimension
Number of packages
Typ e
1 0 0 5 (0 4 0 2 )
1 6 0 8 (0 6 0 3 )
2 0 1 2 (0 8 0 5 )
3 2 1 6 (1 2 0 6 )
3 2 2 5 (1 2 1 0 )
Q u a lity (p cs/R e el)
1 0 ,0 0 0
4 ,0 0 0
4 ,0 0 0
3 ,0 0 0
3 ,0 0 0
A
Φ
178±2
B
Φ
50min
C
Φ
13±0.5
D
21.0±0.8
E
2.0±0.5
W
10.0±0.5
R
1.0
t
2.0±0.5
Leader and blank portion
1
Multi Layer Chip Varistors
Taping dimension
TYPE
1005
1608
2012
3216
3225
EIA
CODE
0402
0603
0805
1206
1210
EIA
CODE
0402
0603
0805
A
1.15±0.1
2.0±0.2
2.4±0.2
3.6±0.2
3.6±0.2
B
0.65±0.1
1.20±0.2
1.65±0.2
2.00±0.2
2.90±0.2
C
D
E
8.0±0.3
3.5±0.05
1.75±0.1
T ( max)
F
2.0±0.05
G
1.0±0.05
H
2.0±0.05
J
Paper
0.8
1.1
1.5 +0.1/-0
4.0±0.1
2.0±0.05
4.0±0.1
1.1
-
2.0
2.0
1.1
Emboss
-
-
2.0
TYPE
1005
1608
2012
3216
3225
1206
1210
2
MULTILAYER CHIP VARISTORS
Terminology
Working Voltage
Vw(dc) - Maximum Continuous DC Voltage with which the waveform is flat. When a ripple voltage is
supplied as from a rectifier source, make sure that the peak voltage is kept under the Vdcm.
Vw(ac) - Maximum Continuous AC Voltage from a sine-wave shape. When the distortion in the waveform is
extensive, make sure that the peak voltage is less than
2 times the Vw (AC)
Varistor Voltage ( Vb (@1mA) , Breakdown Voltage )
The varistor terminal voltage which measured with supplying 1㎃ DC current.
Maximum Transient Clamping Voltage ( Vc )
The peak terminal voltage which measured with an 8/20㎲ impulse of a given peak current
Transient Energy Rating
0.05J
0.1 J
0.2 ~ 0.3 J
0.4 J
Maximum Transient Peak Current ( Ip )
Maximum single peak current which is based on 8/20㎲ current wave shape , without the device failure
Maximum Transient Energy ( Et )
Maximum allowable transient energy for a single impulse of 10/1000㎲ current without device failure
Capacitance
The Capacitance measured at a specified frequency 1MHz and zero voltage bias with 0.5 Vrms
Specified Peak Current & Waveform
1A 8/20㎲
2A 8/20㎲
5A 8/20㎲
10A 8/20㎲
1
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