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MP6KE39CAE3/TR

Trans Voltage Suppressor Diode, 600W, 33.3V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
O-PALF-W2
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
HIGH RELIABILITY
最大击穿电压
41 V
最小击穿电压
37.1 V
击穿电压标称值
39 V
外壳连接
ISOLATED
最大钳位电压
53.9 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值反向功率耗散
600 W
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
BIDIRECTIONAL
最大功率耗散
1.47 W
认证状态
Not Qualified
最大重复峰值反向电压
33.3 V
表面贴装
NO
技术
AVALANCHE
端子面层
MATTE TIN
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
600W Transient Voltage Suppressor
- High Reliability controlled devices
- Economical series for thru hole mounting
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 5.8 to 171 V standoff voltages (V
WM
)
LEVELS
M, MA, MX, MXL
DEVICES
MP6KE6.8A thru MP6KE200CA, e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500.
Refer to
MicroNote 129
for more details on the screening options.
Surface mount equivalents available as MSMBJ5.0A to MSMBJ170CA
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding “e3” suffix
3σ lot norm screening performed on Standby Current I
D
APPLICATIONS / BENEFITS
Economical TVS series for thru-hole mounting
2
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching transients & induced RF
Compliant to IEC 61000-4-2 and IEC 61000-4-4 for ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
o
Class 1: MP6KE6.8A to MP6KE130A or CA
o
Class 2: MP6KE6.8A to MP6KE68A or CA
o
Class 3: MP6KE6.8A to MP6KE36A or CA
o
Class 4: MP6KE6.8A to MP6KE18A or CA
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
o
Class 1: MP6KE6.8A to MP6KE43A or CA
o
Class 2: MP6KE6.8A to MP6KE22A or CA
T-18
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 C: 600 watts at 10/1000 μs (also see Figures 1,2, and 3)
with impulse repetition rate (duty factor) of 0.01 % or less
t
clamping
(0 V to
V
(BR)
min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
°
°
Operating and Storage temperature: -65 C to +150 C
°
Thermal Resistance: 25 C/W at 3/8 inch (10 mm) lead length from body, or 85
C/W
junction
2
to ambient when mounted on FR4 PC board with 4 mm copper pads (1 oz) and track width 1
mm, length 25 mm
°
Steady-State Power: 5 watts @ T
L
=25 C 3/8 inch (10 mm) from body, or 1.47 W when
mounted on FR4 PC board described for thermal resistance
°
Forward Voltage at 25 C: 3.5 Volts maximum @ 100 Amp peak impulse of 8.3 ms half-sine
wave (unidirectional only)
°
Solder temperatures: 260 C for 10 s (maximum)
°
RF01007 Rev A, June 2010
High Reliability Product Group
Page 1 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
MECHANICAL AND PACKAGING
Void-free transfer molded thermosetting epoxy body meeting UL94V-0
Tin-Lead (90 % Sn, 10 % Pb) or RoHS (100% Sn) Compliant annealed matte-Tin plating readily solderable per
MIL-STD-750, method 2026
Body marked with part number
Cathode indicated by band. No cathode band on bi-directional devices.
Available in bulk or custom tape-and-reel packaging
TAPE-AND-REEL standard per EIA-296 (add “TR” suffix to part number)
Weight: 0.7 gram (approximately)
PACKAGE DIMENSIONS
NOTE:
Cathode indicated by band.
All dimensions in millimeters (inches)
SYMBOLS & DEFINITIONS
Symbol
V
WM
P
PP
V
BR
I
D
Definition
Working Peak (Standoff) Voltage
Peak Pulse Power
Breakdown Voltage
Standby Current
Symbol
I
PP
V
C
Definition
Peak Pulse Current
Clamping Voltage
Breakdown Current for V
BR
I
BR
RF01007 Rev A, June 2010
High Reliability Product Group
Page 2 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
ELECTRICAL CHARACTERISTICS @ 25
o
C
MICROSEMI
PART
NUMBER
BREAKDOWN VOLTAGE
V
BR
@
I
BR
RATED
STANDOFF
VOLTAGE
V
WM
V
MIN
6.45
7.13
7.79
8.65
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95
105
114
124
143
152
161
171
190
V
NOM
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
170
180
200
V
MAX
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21
23.1
25.2
28.4
31.5
34.7
37.8
41
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
116
126
137
158
168
179
189
210
mA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
5.8
6.4
7.02
7.78
8.55
9.4
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53
58.1
64.1
70.1
77.8
85.5
94
102
111
128
136
145
154
171
MAX
STANDBY
CURRENT
I
D
@ V
WM
MAX
CLAMPING
VOLTAGE
V
C
@ I
PP
PEAK PULSE
CURRENT
(see Fig. 2)
TEMPERATURE
COEFFICIANT
of
V
BR
I
PP
A
57
53
50
45
41
38
36
33
28
27
24
22
20
18
16
14.4
13.2
12
11.2
10.1
9.3
8.6
7.8
7.1
6.5
5.8
5.3
4.8
4.4
3.4
3.6
3.3
2.9
2.7
2.6
2.4
2.2
α
V(BR)
% /
°C
.057
.061
.065
.068
.073
.075
.078
.081
.084
.086
.088
.090
.092
.094
.096
.097
.098
.099
.100
.101
.101
.102
.103
.104
.104
.105
.105
.106
.106
.107
.107
.107
.108
.108
.108
.108
.108
MP6KE6.8A
MP6KE7.5A
MP6KE8.2A
MP6KE9.1A
MP6KE10A
MP6KE11A
MP6KE12A
MP6KE13A
MP6KE15A
MP6KE16A
MP6KE18A
MP6KE20A
MP6KE22A
MP6KE24A
MP6KE27A
MP6KE30A
MP6KE33A
MP6KE36A
MP6KE39A
MP6KE43A
MP6KE47A
MP6KE51A
MP6KE56A
MP6KE62A
MP6KE68A
MP6KE75A
MP6KE82A
MP6KE91A
MP6KE100A
MP6KE110A
MP6KE120A
MP6KE130A
MP6KE150A
MP6KE160A
MP6KE170A
MP6KE180A
MP6KE200A
A
1000
500
200
50
10
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77
85
92
103
113
125
137
152
165
179
207
219
234
246
274
NOTE 1:
Consult factory for higher voltages.
NOTE 2:
For bidirectional construction, indicate a CA suffix after part number, i.e. MP6KE200CA. Bidirectional capacitance is
half that shown in Figure 4 at zero volts.
RF01007 Rev A, June 2010
High Reliability Product Group
Page 3 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
GRAPHS
Peak Pulse Power (
P
PP
) or continuous
Power in Percent of 25
o
C Rating
50
30
T
L
= 25
o
C
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
10,000
tw – Pulse Width -
s
FIGURE 1
– Peak Pulse Power vs. Pulse Time
P
PP
– Peak Pulse Power – kW
C – Capacitance - Picofarads
Test waveform parameters:
tr=10
s,
tw=1000
s
TL Lead temperature °C
V
(BR)
Breakdown Voltage - Volts
FIGURE 2
– Pulse waveform for
exponential surge
FIGURE 3
– Derating curve
FIGURE 4
– P6KE Typical Capacitance
vs. Breakdown Voltage
RF01007 Rev A, June 2010
High Reliability Product Group
Page 4 of 4
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