桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
MPSA13
1. EMITTER
■
FEATURES
2. BASE
3. COLLECTOR
特點
NPN Darlington Transistor
■
MAXIMUM
RATINGS
最大額定值(T
a
=25
℃
)
Symbol
符號
V
CBO
V
CEO
V
EBO
Ic
P
C
R
Θ
JA
T
j
T
stg
Rating
額定值
30
30
10
500
625
200
150
-55〜150
Unit
單½
Vdc
Vdc
Vdc
mAdc
mW
℃/W
℃
℃
Characteristic
特性參數
Collector-Base voltage
集電極-基極電壓
-Collector-Emitter Voltage
集電極-發射極電壓
Emitter-Base voltage
發射極-基極電壓
Collector Current-Continuous
集電極電流-連續
Collector Power Dissipation
集電極耗散功率
Thermal Resistance Junction to Ambient
熱阻
Junction Temperature
結溫
Storage Temperature Range
儲存溫度
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
MPSA13
■
ELECTRICAL CHARACRTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
特性參數
Collector Cutoff Current
集電極截止電流
Emitter Cutoff Current
發射極截止電流
Collect-Base Breakdown Voltage
Symbol
符號
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
h
FE
V
CE(sat)
V
BE(on)
f
T
C
ob
Test Condition
測試條件
V
CB
= 30V,I
E
=0
V
EB
= 10V,I
C
=0
I
C
= 100μA
I
C
= 1.0mA
I
E
= 100μA
V
CE
= 5V,
I
C
=10mA
V
CE
= 5V,
I
C
=100mA
I
C
= 100mA,
I
B
= 0.5mA
V
CE
= 5V,
I
C
=100mA
V
CE
= 5V,
I
C
= 10mA
V
CB
=10V,I
E
=0,
f=1MHz
Min
最小值
—
—
TYP
典型值
—
—
Max
最大值
0.1
0.1
Unit
單½
μA
μA
V
集電極-基極擊穿電壓
Collect-Base Breakdown Voltage
30
—
—
集電極-基極擊穿電壓
Emitter-Base Breakdown Voltage
30
—
—
V
發射極-基極擊穿電壓
DC Current Gain
直流電流增益
DC Current Gain
直流電流增益
Collector-Emitter Saturation Voltage
10
—
—
V
5000
—
—
—
10000
—
—
—
集電極-發射極½和壓降
Base-Emitter Saturation Voltage
基極-發射極½和壓降
Transition Frequency
特徵頻率
Collector Output Capacitance
輸出電容
—
—
1.5
V
—
—
2
V
125
—
—
MHz
—
4
—
pF
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
MPSA13
■
TYPICAL CHARACTERISTIC
CURVE
典型特性曲线
FPGA/CPLD
